# US 12,004,344 B2 · Method of reducing wrap imparted to silicon wafer by semiconductor layers

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- Number: US 12,004,344 B2
- Document ID: US12004344B2
- Status: Granted
- Kind: B2
- Application number: 17/541,767
- Filed: 2021-12-03
- Published: 2022-03-24
- Granted: 2024-06-04
- Earliest claimed: 2017-07-10
- Assignees: Sumco Corporation
- Applicants: Sumco Corporation
- Inventors: Toshiaki Ono; Bong-Gyun Ko
- Web page: https://patentgrep.com/patent/US12004344B2

## CPC

- H10B 41/20: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10P 90/12: {Preparing bulk and homogeneous wafers}
- C23C 16/402: {Silicon dioxide}
- C30B 29/06: Silicon
- H10B 41/35: with a cell select transistor, e.g. NAND
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/662: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 72/0616: {Monitoring of warpages, curvatures, damages, defects or the like}
- H10B: ELECTRONIC MEMORY DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A method of reducing warp imparted to a silicon wafer having a (110) plane orientation and a <111> notch orientation by anisotropic film stress of a multilayer film that is to be formed on a surface of the silicon wafer, that includes forming the multilayer film on a surface of the silicon wafer in an orientation so that a direction in which the warp of the wafer will be greatest coincides with a direction in which Young's modulus of a crystal orientation of the silicon wafer is greatest. Also, a method of reducing warp imparted to a silicon wafer having a (111) plane orientation by isotropic film stress of a multilayer film to be formed on a surface of the silicon wafer, that includes, prior to forming the multilayer film, causing the silicon wafer to have an oxygen concentration of 8.0×1017 atoms/cm3 or more (ASTM F-121, 1979).

## Claims

### Claim 1

A method of reducing an amount of warp imparted to a silicon wafer having a (110) plane orientation and a <111> notch orientation by anisotropic film stress of a multilayer film that is to be formed on a surface of the silicon wafer, the method comprising:
forming the multilayer film on a surface of the silicon wafer in an orientation so that a direction in which the warp of imparted to the wafer will be greatest coincides with a direction in which Young's modulus of a crystal orientation of the silicon wafer is greatest.

### Claim 2 (depends on 1)

The method of claim 1, wherein the silicon wafer has an oxygen concentration of 6.0×1017 atoms/cm3 or more (ASTM F-121, 1979) prior to forming the multilayer film.

### Claim 3 (depends on 1)

The method of claim 1, wherein the multilayer film is for a semiconductor device layer that includes a 3DNAND flash memory.

### Claim 4

A method of reducing an amount of warp imparted to a silicon wafer having a (111) plane orientation by isotropic film stress of a multilayer film that is to be formed on a surface of the silicon wafer, the method comprising:
prior to forming the multilayer film, causing the silicon wafer to have an oxygen concentration of 8.0×1017 atoms/cm3 or more and 10.6×1017 atoms/cm3 or less (ASTM F-121, 1979).

### Claim 5 (depends on 4)

The method of claim 4, wherein the multilayer film is for a semiconductor device layer that includes a 3DNAND flash memory.