# US 12,003,220 B2 · Hybrid RF integrated circuit device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,003,220 B2 - Document ID: US12003220B2 - Status: Granted - Kind: B2 - Application number: 17/022,221 - Filed: 2020-09-16 - Published: 2022-03-17 - Granted: 2024-06-04 - Earliest claimed: 2020-09-16 - Assignees: MACOM Technology Solutions Holdings, Inc. - Applicants: MACOM Technology Solutions Holdings, Inc. - Inventors: Lei Zhao; Greg Durnan; Abdulrhman M. S. Ahmed - Web page: https://patentgrep.com/patent/US12003220B2 ## CPC - H03F 3/195: in integrated circuits - H03F 1/0288: {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers} - H03F 1/56: Modifications of input or output impedances, not otherwise provided for - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 72/50: Bond wires - H10W 90/00: Package configurations - H03F 2200/318: A matching circuit being used as coupling element between two amplifying stages - H03F 2200/451: the amplifier being a radio frequency amplifier - H10W 44/206: {Wires} - H10W 44/234: {Arrangements for impedance matching} - H10W 44/251: {for monolithic microwave integrated circuits [MMIC]} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/759: {between a chip and a laterally-adjacent discrete passive device} - H03F: AMPLIFIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure relates to an RF amplifier device including an IC chip including at least one transistor formed on a substrate, at least one operational circuit formed on the substrate and electrically coupled to the transistor, and a port configured to electrically couple the at least one operational circuit with operational circuitry outside the IC chip to adjust operation of the operational circuitry. ## Claims ### Claim 1 A Radio Frequency (RF) amplifier device comprising: an integrated circuit (IC) chip comprising: a substrate; a first transistor formed on the substrate; a first operational circuit comprising one or more electrical components, other than a bonding pad, bond wire, or other conductor, formed on the substrate and electrically coupled to the first transistor, and configured to perform one or more of impedance matching, phase shifting, and harmonic termination operations; and a first port, other than an RF input or output, comprising a bond pad and at least one bond wire and configured to electrically couple the first operational circuit with external circuitry to thereby adjust the impedance matching, phase shifting, or harmonic termination operations; whereby the one or more components of the first operational circuit and the external circuitry together perform RF tuning. ### Claim 2 (depends on 1) The RF amplifier device of claim 1, wherein the fundamental frequency is between 0.5 GHz and 1 GHz. ### Claim 3 (depends on 1) The RF amplifier device of claim 1, wherein the fundamental frequency is approximately 3 GHz. ### Claim 4 (depends on 1) The RF amplifier device of claim 1, wherein the fundamental frequency is approximately 10 GHz. ### Claim 5 (depends on 1) The RF amplifier device of claim 1, wherein the fundamental frequency is between 12 GHz and 18 GHz. ### Claim 6 (depends on 1) The RF amplifier device of claim 1, wherein the fundamental frequency is between 18 GHz and 27 GHz. ### Claim 7 (depends on 1) The RF amplifier device of claim 1, wherein the fundamental frequency is between 27 GHz and 40 GHz. ### Claim 8 (depends on 1) The RF amplifier device of claim 1, wherein the first operational circuit comprises input matching circuit. ### Claim 9 (depends on 1) The RF amplifier device of claim 1, further comprising a second transistor, wherein the first operational circuit comprises interstage matching circuitry between the first transistor and the second transistor. ### Claim 10 (depends on 1) The RF amplifier device of claim 1, wherein the first operational circuit comprises an output matching circuit. ### Claim 11 (depends on 1) The RF amplifier device of claim 1, wherein the amplifier device comprises gallium nitride (GaN) and silicon carbide (SiC). ### Claim 12 (depends on 1) The RF amplifier device of claim 1, further comprising a second port. ### Claim 13 An RF amplifier device comprising: an integrated circuit (IC) chip comprising: a substrate; a first transistor formed on the substrate in a first path; a second transistor formed on the substrate in a second path; a first operational circuit formed on the substrate and comprising one or more electrical components, other than a bonding pad, bond wire, or other conductor, and electrically coupled to the first transistor, and configured to perform one or more of impedance matching, phase shifting, and harmonic termination operations; and a port, other than an RF input or output, comprising a bond pad and at least one bond wire and configured to electrically couple the first operational circuit with external circuitry to thereby adjust the impedance matching, phase shifting, or harmonic termination operations; whereby the one or more components of the first operational circuit and the external circuitry together perform RF tuning. ### Claim 14 (depends on 1) The RF amplifier device of claim 1, wherein the fundamental frequency is configured to be tuned. ### Claim 15 (depends on 13) The RF amplifier device of claim 13, wherein at least one of the first transistor and the second transistor is a multiple stage transistor. ### Claim 16 (depends on 1) The RF amplifier device of claim 1, further comprising a second transistor. ### Claim 17 (depends on 16) The RF amplifier device of claim 16, further comprising input matching circuitry at the input of the first transistor. ### Claim 18 (depends on 16) The RF amplifier device of claim 16, further comprising output matching circuitry at the output of the second transistor. ### Claim 19 (depends on 16) The RF amplifier device of claim 16, further comprising interstage matching circuitry electrically coupled between the first transistor and the second transistor. ### Claim 20 (depends on 15) The RF amplifier device of claim 15, further comprising interstage matching circuitry electrically coupled to the at least one of the first transistor and the second transistor that is a multiple stage transistor. ### Claim 21 (depends on 1) The RF amplifier device of claim 1, further comprising multiple transistor paths. ### Claim 22 (depends on 1) The RF amplifier device of claim 1, wherein the RF amplifier device comprises a Doherty amplifier. ### Claim 23 (depends on 1) The RF amplifier device of claim 1, wherein the RF amplifier device comprises a GaN high-electron-mobility transistor (HEMT). ### Claim 24 (depends on 1) The RF amplifier device of claim 1, wherein the RF amplifier device comprises a silicon-based laterally-diffused metal-oxide semiconductor (LDMOS). ### Claim 25 (depends on 1) The RF amplifier device of claim 1, wherein the first operational circuit comprises passive components. ### Claim 26 An RF amplifier device comprising: an integrated circuit (IC) chip comprising: a substrate; a first transistor formed on the substrate, a second transistor formed on the substrate, a first operational circuit comprising one or more electrical components, other than a bonding pad, bond wire, or other conductor, wherein the first operational circuit is formed on the substrate, the first operational circuit is electrically coupled to both the first and second transistors, and the first operational circuit is configured to perform one or more of impedance matching, phase shifting, and harmonic termination operations; and a port, other than an RF input or output, comprising a bond pad and at least one bond wire and configured to electrically couple the first operational circuit with external circuitry to thereby adjust the impedance matching, phase shifting, or harmonic termination operations; whereby the one or more components of the first operational circuit and the external circuitry together perform RF tuning. ### Claim 27 (depends on 13) The RF amplifier device of claim 13 further comprising interstage matching circuitry between the first transistor and the second transistor. ### Claim 28 (depends on 13) The RF amplifier device of claim 13, further comprising input matching circuitry at the input of at least one of the first transistor and the second transistor. ### Claim 29 (depends on 13) The RF amplifier device of claim 13, further comprising output matching circuitry at the output of at least one of the first transistor and the second transistor.