# US 12,003,188 B2 · Modular parallel half-bridge integrated assembly with annular layout

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,003,188 B2
- Document ID: US12003188B2
- Status: Granted
- Kind: B2
- Application number: 17/844,748
- Filed: 2022-06-21
- Published: 2022-10-06
- Granted: 2024-06-04
- Earliest claimed: 2019-12-24
- Assignees: Beijing Pesit Power Integration Technology Company Limited
- Applicants: Beijing Pesit Power Integration Technology Company Limited
- Inventors: Haijun Zhao; Guangfeng Xie
- Web page: https://patentgrep.com/patent/US12003188B2

## CPC

- H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections}
- H02M 7/5387: in a bridge configuration
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H02M 1/088: for the simultaneous control of series or parallel connected semiconductor devices
- H05K 1/181: associated with surface mounted components
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

A modular parallel half-bridge integrated assembly with an annular layout is provided. The assembly includes a plurality of parallel sub-modules to improve a current capacity of the assembly. The sub-modules adopt an annular layout and are connected in parallel to balance currents of the sub-modules. The half-bridge integrated assembly includes a plurality of sub-modules, a plurality of heat sinks, a drive board, a direct current (DC) positive collecting busbar, a DC negative collecting busbar, and an alternating current (AC) collecting busbar. According to the assembly, since each insulated gate bipolar transistor (IGBT) is tightly bound to a capacitor, parasitic inductance of a commutation loop is small, realizing a small voltage overshoot and a fast switching speed for the IGBT module, so as to balance the currents of the sub-modules.

## Claims

### Claim 1

A modular parallel half-bridge integrated assembly with an annular layout, comprising sub-modules,
wherein the sub-modules each comprise an upper half-bridge insulated gate bipolar transistor (IGBT), a lower half-bridge IGBT, and direct current (DC) capacitors,
wherein the DC capacitors comprises a first capacitor, a second capacitor, and a third capacitor, a positive terminal of the first capacitor is electrically connected to a first pin of a first inductor, a second pin of the first inductor is electrically connected to a DC positive terminal of a first IGBT of the upper half-bridge IGBT, a DC negative terminal of the first IGBT of the upper half-bridge IGBT is electrically connected to a first pin of a second inductor, a second pin of the second inductor is electrically connected to an electrical node, the first pin of the second inductor is electrically connected to a DC positive terminal of a second IGBT of the lower half-bridge IGBT, and a DC negative terminal of the second IGBT of the lower half-bridge IGBT is electrically connected to a negative terminal of the first capacitor;
a positive terminal of the second capacitor is electrically connected to a first pin of a third inductor, a second pin of the third inductor is electrically connected to a DC positive terminal of a third IGBT of the upper half-bridge IGBT, a DC negative terminal of the third IGBT of the upper half-bridge IGBT is electrically connected to a first pin of a fourth inductor, a second pin of the fourth inductor is electrically connected to the second pin of the second inductor, the first pin of the fourth inductor is electrically connected to a DC positive terminal of a fourth IGBT of the lower half-bridge IGBT, and a DC negative terminal of the fourth IGBT of the lower half-bridge IGBT is electrically connected to a negative terminal of the second capacitor; and
a positive terminal of the third capacitor is electrically connected to a first pin of a fifth inductor, a second pin of the fifth inductor is electrically connected to a DC positive terminal of a fifth IGBT of the upper half-bridge IGBT, a DC negative terminal of the fifth IGBT of the upper half-bridge IGBT is electrically connected to a first pin of a sixth inductor, a second pin of the sixth inductor is electrically connected to the second pin of the fourth inductor, the first pin of the sixth inductor is electrically connected to a DC positive terminal of a sixth IGBT of the lower half-bridge IGBT, and a DC negative terminal of the sixth IGBT of the lower half-bridge IGBT is electrically connected to a negative terminal of the third capacitor.

### Claim 2 (depends on 1)

The modular parallel half-bridge integrated assembly according to claim 1, wherein an electrical wiring terminal of each of the sub-modules comprises a DC positive terminal, a DC negative terminal, an alternating current (AC) terminal, an upper half-bridge gate, an upper half-bridge emitter, a lower half-bridge gate, and a lower half-bridge emitter.

### Claim 3 (depends on 1)

The modular parallel half-bridge integrated assembly according to claim 1, wherein the upper half-bridge IGBT and the lower half-bridge IGBT each comprise a plurality of parallel half-bridge IGBTs.

### Claim 4 (depends on 1)

The modular parallel half-bridge integrated assembly according to claim 1, wherein each of a heat dissipation surface of the upper half-bridge IGBT and a heat dissipation surface of the lower half-bridge IGBT is connected to a heat sink.

### Claim 5 (depends on 4)

The modular parallel half-bridge integrated assembly according to claim 4, wherein a combination of the sub-modules and the heat sink is configured in the annular layout, and the combination is structurally symmetrical.

### Claim 6 (depends on 1)

The modular parallel half-bridge integrated assembly according to claim 1, wherein a drive board is configured inside a ring constituted by the sub-modules, and the drive board is electrically connected to an upper half-bridge gate of each of the sub-modules, an upper half-bridge emitter of each of the sub-modules, a lower half-bridge gate of each of the sub-modules, and a lower half-bridge emitter of each of the sub-modules.

### Claim 7 (depends on 1)

The modular parallel half-bridge integrated assembly according to claim 1, wherein a DC positive terminal of each of the sub-modules is electrically connected to a DC positive terminal of a collecting busbar.

### Claim 8 (depends on 1)

The modular parallel half-bridge integrated assembly according to claim 1, wherein a DC negative terminal of each of the sub-modules is electrically connected to a DC negative terminal of a collecting busbar.

### Claim 9 (depends on 1)

The modular parallel half-bridge integrated assembly according to claim 1, wherein an AC terminal of each of the sub-modules is electrically connected to an AC terminal of a collecting busbar.