# US 12,003,075 B2 · Surface emitting laser device and surface emitting laser apparatus having the same

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- Number: US 12,003,075 B2
- Document ID: US12003075B2
- Status: Granted
- Kind: B2
- Application number: 17/275,982
- Filed: 2019-09-09
- Published: 2022-02-03
- Granted: 2024-06-04
- Earliest claimed: 2018-09-13
- Assignees: Suzhou Lekin Semiconductor Co., Ltd.
- Applicants: Suzhou Lekin Semiconductor Co., Ltd.
- Inventors: Se Yeon Jung; Seung Hwan Kim
- Web page: https://patentgrep.com/patent/US12003075B2

## CPC

- H01S 5/0425: {Electrodes, e.g. characterised by the structure}
- H01S 5/0237: by soldering
- H01S 5/04252: {characterised by the material}
- H01S 5/18: Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S 5/18311: {using selective oxidation}
- H01S 5/0234: Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
- H01S 5/02345: Wire-bonding
- H01S 5/04254: {characterised by the shape}
- H01S 5/18305: {with emission through the substrate, i.e. bottom emission}
- H01S 5/18394: {Apertures, e.g. defined by the shape of the upper electrode}
- H01S 5/34313: {with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs}
- H01S 5/423: {having a vertical cavity}
- H01S 2301/176: Specific passivation layers on surfaces other than the emission facet
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

The surface emitting laser device according to the embodiment includes a substrate, a first metal layer disposed on the substrate, a second metal layer disposed on the first metal layer, and a third metal layer disposed between the first metal layer and the second metal layer. The first to third metal layers may include different materials, and the second metal layer may include copper (Cu). The third metal layer may prevent diffusion of copper from the second metal layer into the first metal layer.

## Claims

### Claim 1

A surface emitting laser device, comprising:
a substrate;
a first metal layer disposed on the substrate;
a second metal layer disposed on the first metal layer; and
a third metal layer disposed between the first metal layer and the second metal layer,
wherein the first to third metal layers include different materials,
wherein the second metal layer includes copper (Cu), and
wherein the third metal layer prevents diffusion of copper from the second metal layer into the first metal layer,
a first reflective layer on the third metal layer;
a light emitting layer on the first reflective layer;
an oxide layer on the light emitting layer;
a second reflective layer on the oxide layer; and
a second electrode on the second reflective layer,
wherein the second electrode includes a first metal layer, a second metal layer and a third metal layer disposed between the first metal layer and the second metal layer,
wherein the first metal layer of the second electrode includes a plurality of nanopatterns; and
wherein a separation distance between the nanopatterns is greater than or equal to a diameter of the nanopattern and is less than or equal to 3 times the diameter of the nanopatterns.

### Claim 2 (depends on 1)

The surface emitting laser device of claim 1, further comprising a fourth metal layer disposed on the second metal layer to prevent oxidation of the second metal layer.

### Claim 3 (depends on 2)

The surface emitting laser device of claim 2, further comprising a fifth metal layer disposed between the second metal layer and the third metal layer to bond the second metal layer and the third metal layer.

### Claim 4 (depends on 3)

The surface emitting laser device of claim 3, wherein the first metal layer has a thickness of 5 nm to 100 nm, and the first metal layer includes at least one of AuGe, AuNi, nickel (Ni), and palladium (Pd).

### Claim 5 (depends on 3)

The surface emitting laser device of claim 3, wherein the second metal layer has a thickness of 200 nm to 3000 nm, and the third metal layer has a thickness of 5 nm to 300 nm.

### Claim 6 (depends on 3)

The surface emitting laser device of claim 3, wherein the third metal layer includes at least one of nickel (Ni), platinum (Pt), tungsten (W), and TiW.

### Claim 7 (depends on 2)

The surface emitting laser device of claim 2, wherein the fourth metal layer has a thickness of 0.3 nm to 50 nm, and the fourth metal layer includes at least one of gold (Au), platinum (Pt), and tungsten (W).

### Claim 8 (depends on 3)

The surface emitting laser device of claim 3, wherein the fifth metal layer has a thickness of 5 nm to 100 nm, and the fifth metal layer includes at least one of titanium (Ti), palladium (Pd), and chromium (Cr).

### Claim 9 (depends on 2)

The surface emitting laser device of claim 2, wherein the fourth metal layer includes particles, and wherein the particles are disposed on a lower surface of the second metal layer, and wherein the density of the particles decreases as a distance increases from the lower surface of the second metal layer.

### Claim 10 (depends on 1)

A surface emitting laser apparatus, including:
a first substrate;
a surface emitting laser device disposed on the first substrate; and
a solder layer disposed between the first substrate and the surface emitting laser device,
wherein the surface emitting laser device includes the surface emitting laser device according to claim 1.

### Claim 11 (depends on 1)

The surface emitting laser device of claim 1, wherein the first metal layer of the second electrode includes a metal having a work function equal to or greater than that of the second reflective layer.

### Claim 12 (depends on 1)

The surface emitting laser device of claim 1, wherein a ratio of a work function of the second reflective layer to a work function of the first metal layer of the second electrode ranges 1:0.8 to 1:1.2.

### Claim 13 (depends on 12)

The surface emitting laser device of claim 12, wherein difference between the work function of first metal layer of the second electrode and the work function of the second reflective layer is less than 0.15 eV.

### Claim 14 (depends on 1)

The surface emitting laser device of claim 1, wherein a thickness of the first metal layer of the second electrode is 5 nm to 30 nm.

### Claim 15 (depends on 1)

The surface emitting laser device of claim 1, wherein a ratio of a thickness of the first metal layer of the second electrode to a thickness of the second metal layer of the second electrode ranges 1:3 to 1:10.

### Claim 16 (depends on 1)

The surface emitting laser device of claim 1, wherein a thickness of the third metal layer of the second electrode is equal to or greater than that of the second metal layer of the second electrode.

### Claim 17 (depends on 1)

The surface emitting laser device of claim 1, wherein the second metal layer of the second electrode includes a first region and a second region,
wherein the first region is disposed between the nanopatterns of the first metal layer of the second electrode and contact a part of an upper surface of the second reflective layer, and
wherein the second region contacts the nanopattern of the first metal layer of the second electrode.