# US 12,002,906 B2 · Semiconductor device and semiconductor component

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- Number: US 12,002,906 B2
- Document ID: US12002906B2
- Status: Granted
- Kind: B2
- Application number: 17/406,521
- Filed: 2021-08-19
- Published: 2022-02-24
- Granted: 2024-06-04
- Earliest claimed: 2020-08-19
- Assignees: Epistar Corporation
- Applicants: Epistar Corporation
- Inventors: Hao-Chun Liang; Wei-Shan Yeoh; Yao-Ning Chan; Yi-Ming Chen; Shih-Chang Lee
- Web page: https://patentgrep.com/patent/US12002906B2

## CPC

- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F 77/306: {for devices having potential barriers}
- H10F 77/933: {for devices having potential barriers}
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10F 77/206: {for devices having potential barriers}
- H10H 20/831: characterised by their shape
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.

## Claims

### Claim 1

A semiconductor device, comprising:
an active structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer;
a ring-shaped semiconductor contact layer located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall;
a first electrode having an upper surface and covering the ring-shaped semiconductor contact layer; and
an insulating layer covering the first electrode and the active structure and having a second inner sidewall and a second outer sidewall;
wherein the second-conductivity-type semiconductor layer has a protruding portion having a third sidewall and the first electrode is located on the protruding portion and has a fourth sidewall, the first inner sidewall is not flush with the second inner sidewall in a vertical direction, and the insulating layer covers the upper surface of the first electrode, the fourth sidewall, the third sidewall and the active structure.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first outer sidewall is not flush with the second inner sidewall in the vertical direction.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the first inner sidewall defines a first geometric shape having a first width, the second inner sidewall defines a second geometric shape having a second width, and the first width is larger than 90% of the second width.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the first inner sidewall is separated from the second inner sidewall by a distance L in a horizontal direction, and 0 μm<the distance L<5 μm.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the second inner sidewall is overlapped with the ring-shaped semiconductor contact layer in the vertical direction.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the third sidewall is flush with the fourth sidewall.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, wherein the second-conductivity-type semiconductor layer further has a bottom portion under the protruding portion, the bottom portion has a third width and the protruding portion has a fourth width less than the third width.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the insulating layer covers 30% or less of an area of the upper surface of the first electrode.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, wherein the second inner sidewall defines a second geometric shape having a second width, and the first inner sidewall is separated from the second inner sidewall by a distance L in a horizontal direction, and the distance L is less than 5% of the second width.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein the ring-shaped semiconductor contact layer has an open ring shape.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein the ring-shaped semiconductor contact layer includes a plurality of island structures which are separated from each other.

### Claim 12 (depends on 1)

The semiconductor device of claim 1, wherein the ring-shaped semiconductor contact layer has a circular ring shape or a rectangular ring shape.

### Claim 13 (depends on 1)

The semiconductor device of claim 1, wherein the ring-shaped semiconductor contact layer has a closed ring shape.

### Claim 14 (depends on 1)

The semiconductor device of claim 1, wherein the first inner sidewall and the second inner sidewall have the same shape.

### Claim 15 (depends on 1)

The semiconductor device of claim 1, wherein the first inner sidewall defines a first geometric shape having a first width, the second inner sidewall defines a second geometric shape having a second width, and the second width is larger than the first width.

### Claim 16 (depends on 1)

The semiconductor device of claim 1, wherein the ring-shaped semiconductor contact layer is surrounded by the first electrode.

### Claim 17 (depends on 1)

The semiconductor device of claim 1, wherein the ring-shaped semiconductor contact layer and the insulating layer are not in direct contact.

### Claim 18

A semiconductor component, comprising:
a semiconductor device, comprising:
an active structure having a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer;
a ring-shaped semiconductor contact layer located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall;
a first electrode having an upper surface and covering the ring-shaped semiconductor contact layer; and
an insulating layer covering the first electrode and the active structure and having a second inner sidewall and a second outer sidewall; and
a welding wire having a bonded portion bonded to the first electrode;
wherein the second-conductivity-type semiconductor layer has a protruding portion having a third sidewall and the first electrode is located on the protruding portion and has a fourth sidewall, the first inner sidewall is not flush with the second inner sidewall in a vertical direction, and the insulating layer covers the upper surface of the first electrode, the fourth sidewall, the third sidewall and the active structure.

### Claim 19 (depends on 18)

The semiconductor component of claim 18, wherein the bonded portion has a bonding width, the first inner sidewall defines a first geometric shape having a first width, the second inner sidewall defines a second geometric shape having a second width, and the second width is larger than the bonding width.

### Claim 20 (depends on 19)

The semiconductor component of claim 19, wherein the first width is larger than 90% of the second width.