# US 12,002,904 B2 · Light-emitting element with cushion part

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- Number: US 12,002,904 B2
- Document ID: US12002904B2
- Status: Granted
- Kind: B2
- Application number: 17/241,958
- Filed: 2021-04-27
- Published: 2021-08-12
- Granted: 2024-06-04
- Earliest claimed: 2014-12-16
- Assignees: Epistar Corporation
- Applicants: Epistar Corporation
- Inventors: Chao-Hsing Chen; Tsung-Hsun Chiang; Chien-Chih Liao; Wen-Hung Chuang; Min-Yen Tsai; Bo-Jiun Hu
- Web page: https://patentgrep.com/patent/US12002904B2

## CPC

- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/81: Bodies
- H10H 20/831: characterised by their shape
- H10H 20/832: characterised by their material
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

## Claims

### Claim 1

A light-emitting element comprises:
a semiconductor light-emitting stack comprising a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween;
a first insulating layer disposed on the second semiconductor layer;
a first pad disposed on the first insulating layer and electrically connecting to the first semiconductor layer;
a second pad disposed on the first insulating layer and electrically connecting to the second semiconductor layer; and
a cushion part disposed on the first insulating layer, between the first pad and the second pad, devoid of covering the first pad and the second pad, and devoid of connecting to the first pad and the second pad, wherein a material of the cushion part comprises an insulating material or a transparent material;
wherein the cushion part comprises a first top surface, one of the first pad and the second pad comprises a second top surface, the first top surface is below the second top surface in a cross-sectional view.

### Claim 2 (depends on 1)

The light-emitting element of claim 1, further comprising one or a plurality of first depressions formed in the semiconductor light-emitting stack and penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer.

### Claim 3 (depends on 2)

The light-emitting element of claim 2, wherein the first insulating layer covers a side wall of the one or the plurality of first depressions.

### Claim 4 (depends on 2)

The light-emitting element of claim 2, wherein the first pad electrically connects the first semiconductor layer via the one or the plurality of first depressions.

### Claim 5 (depends on 2)

The light-emitting element of claim 2, wherein the cushion part is devoid of overlapping the one or the plurality of first depressions.

### Claim 6 (depends on 5)

The light-emitting element of claim 5, wherein the cushion part is formed on the second semiconductor layer of the semiconductor light-emitting stack.

### Claim 7 (depends on 1)

The light-emitting element of claim 1, wherein the cushion part comprises SiO2, TiO2, or Si3N4.

### Claim 8 (depends on 1)

The light-emitting element of claim 1, wherein in a top view, the cushion part is disposed in a center region of the light-emitting element.

### Claim 9 (depends on 8)

The light-emitting element of claim 8, wherein a shape of the cushion part comprises a symmetrical shape in the top view.

### Claim 10 (depends on 8)

The light-emitting element of claim 8, wherein a shape of the cushion part comprises an irregular shape in the top view.

### Claim 11 (depends on 1)

The light-emitting element of claim 1, wherein the cushion part is in direct contact with the first insulating layer.

### Claim 12 (depends on 1)

The light-emitting element of claim 1, wherein the first insulating layer comprises a first depression and a second depression, the first pad electrically connects the first semiconductor layer via the first depression, and the second pad electrically connects the second semiconductor layer via the second depression.

### Claim 13 (depends on 12)

The light-emitting element of claim 12, further comprising a first conductive layer disposed on the second semiconductor layer and electrically connecting to the second semiconductor layer.

### Claim 14 (depends on 13)

The light-emitting element of claim 13, further comprising a second conductive layer disposed on the first semiconductor layer and electrically connecting to the first semiconductor layer.

### Claim 15 (depends on 14)

The light-emitting element of claim 14, wherein the cushion part is devoid of overlapping the first conductive layer and the second conductive layer.

### Claim 16 (depends on 14)

The light-emitting element of claim 14, wherein the cushion part is surrounded by the second conductive layer and is electrically and physically isolated from the first conductive layer.

### Claim 17 (depends on 12)

The light-emitting element of claim 12, further comprising a second insulating layer disposed on the first insulating layer, the first pad and the second pad are disposed on the second insulating layer.

### Claim 18 (depends on 17)

The light-emitting element of claim 17, wherein the second insulating layer comprises a third depression and a fourth depression, the first pad electrically connects the first semiconductor layer via the third depression, and the second pad electrically connects the second semiconductor layer via the fourth depression.
