# US 12,002,903 B2 · Group-III nitride laminated substrate and semiconductor element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,903 B2 - Document ID: US12002903B2 - Status: Granted - Kind: B2 - Application number: 16/952,665 - Filed: 2020-11-19 - Published: 2021-06-17 - Granted: 2024-06-04 - Earliest claimed: 2019-11-22 - Assignees: Sumitomo Chemical Company, Limited - Applicants: Sumitomo Chemical Company, Limited - Inventors: Hajime Fujikura; Taichiro Konno; Takeshi Kimura - Web page: https://patentgrep.com/patent/US12002903B2 ## CPC - H10H 20/8252: {characterised by the dopants} - H10P 14/3216: {Nitrides} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/2921: {being crystalline insulating materials} - H10P 14/2926: {Crystal orientations} - H10P 14/3416: {Nitrides} - H10P 14/3451: {Structure} - H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs} - H10D 62/854: further characterised by the dopants - H10H 20/825: containing nitrogen, e.g. GaN - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Provided is a technology capable of improving the quality of a GaN layer that is formed on an underlying substrate. A group III-nitride laminated substrate includes an underlying substrate, a first layer that is formed on the underlying substrate and is made of aluminum nitride, and a second layer that is formed on the first layer and is made of gallium nitride. The second layer has a thickness of 10 μm or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less. ## Claims ### Claim 1 A group III-nitride laminated substrate comprising: an underlying substrate; a first layer that is formed on the underlying substrate, wherein the first layer consists of aluminum nitride, with a top surface having Al-polarity; and a second layer that is formed on the top surface of the first layer and is made of gallium nitride, wherein the second layer has a thickness of 10 μm or less, a half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less. ### Claim 2 (depends on 1) The group III-nitride laminated substrate according to claim 1, wherein, when a root mean square value determined through measurement of a 5-μm square region using an atomic force microscope is taken as a surface roughness, the surface of the second layer has a surface roughness of 0.5 nm or less. ### Claim 3 (depends on 1) The group III-nitride laminated substrate according to claim 1, wherein in-plane fluctuation in the thickness of the second layer is 4% or less. ### Claim 4 (depends on 1) The group III-nitride laminated substrate according to claim 1, wherein the second layer is doped with a dopant, and in-plane fluctuation in a dopant concentration in the second layer is 4% or less. ### Claim 5 (depends on 1) The group III-nitride laminated substrate according to claim 1, wherein the second layer is doped with a dopant for controlling a carrier concentration, and in-plane fluctuation in the carrier concentration in the second layer is 4% or less. ### Claim 6 (depends on 1) The group III-nitride laminated substrate according to claim 1, wherein warping of the group III-nitride laminated substrate is 140 μm or less. ### Claim 7 (depends on 1) The group III-nitride laminated substrate according to claim 1, wherein the second layer has a thickness of 3 μm or less. ### Claim 8 (depends on 7) The group III-nitride laminated substrate according to claim 7, wherein in-plane fluctuation in the thickness of the second layer is 2.5% or less. ### Claim 9 (depends on 7) The group III-nitride laminated substrate according to claim 7, wherein the second layer is doped with a dopant, and in-plane fluctuation in a dopant concentration in the second layer is 2.5% or less. ### Claim 10 (depends on 7) The group III-nitride laminated substrate according to claim 7, wherein warping of the group III-nitride laminated substrate is 50 μm or less. ### Claim 11 (depends on 1) The group III-nitride laminated substrate according to claim 1, which is to be used to manufacture a semiconductor element, wherein the second layer is to be used as at least a portion of an operating layer of the semiconductor element. ### Claim 12 A semiconductor element comprising, as at least a portion of an operating layer, a second layer included in a group III-nitride laminated substrate, the group III-nitride laminated substrate including: an underlying substrate; a first layer that is formed on the underlying substrate, wherein the first layer consists of aluminum nitride, with a top surface having Al-polarity; and a second layer that is formed on the top surface of the first layer and is made of gallium nitride, wherein the second layer has a thickness of 10 μm or less, a half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less. ### Claim 13 A group III-nitride laminated substrate comprising: an underlying substrate; and a first layer that is formed on the underlying substrate, wherein the first layer consists of aluminum nitride, with a top surface having Al-polarity, wherein the top surface of the first layer is to be used as a base for growth of a second layer that is made of gallium nitride and has a thickness of 10 μm or less and in which a half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.