# US 12,002,901 B2 · Optoelectronic semiconductor component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,901 B2 - Document ID: US12002901B2 - Status: Granted - Kind: B2 - Application number: 18/212,935 - Filed: 2023-06-22 - Published: 2023-11-02 - Granted: 2024-06-04 - Earliest claimed: 2009-08-07 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Karl Weidner; Ralph Wirth; Axel Kaltenbacher; Walter Wegleiter; Bernd Barchmann; Oliver Wutz; Jan Marfeld - Web page: https://patentgrep.com/patent/US12002901B2 ## CPC - H10H 20/018: {Bonding of wafers} - H10F 71/139: {using temporary substrates} - H10F 77/40: Optical elements or arrangements (surface textures H10F77/70) - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10F 77/496: {Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45)} - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H10F 77/933: {for devices having potential barriers} - H10H 20/8506: {Containers} - H10H 20/8512: {Wavelength conversion materials} - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10H 20/856: Reflecting means - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 74/111: {the semiconductor body being completely enclosed} - H10W 74/141: {the encapsulations being on at least the sidewalls of the semiconductor body} - H10W 90/00: Package configurations - H10H 20/036: {of packages} - H10H 20/0362: {of encapsulations} - H10H 20/0364: {of interconnections} - H10H 20/853: characterised by their shape - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body. ## Claims ### Claim 1 An optoelectronic semiconductor component comprising: an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting said top area and said bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body. ### Claim 2 (depends on 1) The optoelectronic semiconductor component according to claim 1, wherein the optoelectronic semiconductor chip comprises said electrical contract locations only at one side, either the underside or the top side. ### Claim 3 (depends on 1) The optoelectronic semiconductor component according to claim 1, wherein n- and p-side contacts of the optoelectronic semiconductor chip are freely accessible and the optoelectronic semiconductor component is electrically contactable via the n- and p-side contacts of the optoelectronic semiconductor chip. ### Claim 4 (depends on 1) The optoelectronic semiconductor component according to claim 1, wherein the molded body is reflective for electromagnetic radiation produced during operation of the optoelectronic semiconductor chip. ### Claim 5 (depends on 1) The optoelectronic semiconductor component according to claim 1, wherein the molded body comprises side surfaces facing away from side areas of the optoelectronic semiconductor chip, and the side surfaces comprise grooves. ### Claim 6 (depends on 1) The optoelectronic semiconductor component according to claim 1, further comprising a phosphor layer comprising phosphor particles, wherein the phosphor layer contacts the molded body and the optoelectronic semiconductor chip and the phosphor particles absorb electromagnetic radiation generated by the semiconductor chip during operation and re-emit electromagnetic radiation in a different wavelength range than the optoelectronic semiconductor chip. ### Claim 7 (depends on 6) The optoelectronic semiconductor component according to claim 6, wherein the phosphor layer is in direct contact with the optoelectronic semiconductor chip and the molded body. ### Claim 8 (depends on 7) The optoelectronic semiconductor component according to claim 7, wherein the phosphor layer comprises a matrix material into which phosphor particles are introduced. ### Claim 9 (depends on 7) The optoelectronic semiconductor component according to claim 7, wherein the molded body comprises a first matrix material into which particles that reflect electromagnetic radiation are introduced, the phosphor layer comprises a second matrix material into which phosphor particles are introduced, and the first and the second matrix material comprise a silicone. ### Claim 10 A method of producing an optoelectronic semiconductor component comprising: providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip comprises semiconductor layers deposited on a substrate; and forming a molded body around the at least one optoelectronic semiconductor chip, wherein the molded body surrounds all side areas of the at least one optoelectronic semiconductor chip at least in places such that at least some of the layers deposited on the substrate are free of the molded body such that these layers are not covered or completely exposed, removing the carrier. ### Claim 11 (depends on 10) The method according to claim 10, wherein the layers deposited on the substrate are covered with a further material. ### Claim 12 (depends on 10) The method according to claim 10, wherein the layers deposited on the substrate remain free of the molded body and a further material. ### Claim 13 (depends on 10) The method according to claim 10, wherein the molded body comprises a matrix material and particles are introduced into the matrix material. ### Claim 14 (depends on 13) The method according to claim 13, wherein the matrix material contains silicone or consists of silicone. ### Claim 15 (depends on 10) The method according to claim 10, wherein the at least one optoelectronic semiconductor chip is covered by the molded body only up to a specific height at its side areas, and parts of the at least one semiconductor chip protrude from the molded body. ### Claim 16 (depends on 15) The method according to claim 15, wherein the side areas remain free from the molded body.