# US 12,002,889 B2 · Devices including channel materials and passivation materials > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,889 B2 - Document ID: US12002889B2 - Status: Granted - Kind: B2 - Application number: 18/160,208 - Filed: 2023-01-26 - Published: 2023-06-08 - Granted: 2024-06-04 - Earliest claimed: 2019-11-13 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Kamal M. Karda; Haitao Liu - Web page: https://patentgrep.com/patent/US12002889B2 ## CPC - H10D 30/6728: {Vertical TFTs} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)} - H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A microelectronic device comprises a conductive line and a transistor adjacent to the conductive line. The transistor comprises a channel material extending into the conductive line, the channel material contacting the conductive line in three dimensions, a dielectric material adjacent to the channel material, a conductive material adjacent to the dielectric material, and a passivation material adjacent to the channel material. The microelectronic device further comprises a conductive contact adjacent to the channel material, the conductive contact including a portion extending between opposing portions of the channel material. Related microelectronic devices, electronic devices, and related methods are also disclosed. ## Claims ### Claim 1 A device, comprising: a vertical transistor comprising: a passivation material; a vertical channel material surrounding the passivation material, the vertical channel material exhibiting a U-shaped cross-section; a dielectric material surrounding the vertical channel material; and a conductive material surrounding the dielectric material; and a conductive line underlying the vertical transistor, the vertical channel material extending into the conductive line. ### Claim 2 (depends on 1) The device of claim 1, wherein the dielectric material comprises a different material composition than the passivation material. ### Claim 3 (depends on 1) The device of claim 1, wherein sidewalls of the vertical channel material contact the conductive line. ### Claim 4 (depends on 1) The device of claim 1, wherein the passivation material comprises yttrium oxide. ### Claim 5 (depends on 1) The device of claim 1, wherein a lower surface of the passivation material is vertically below an upper surface of the conductive line. ### Claim 6 (depends on 1) The device of claim 1, further comprising a conductive contact, a portion of the conductive contact surrounded by the vertical channel material. ### Claim 7 (depends on 1) The device of claim 1, further comprising a conductive contact in contact with vertically extending surfaces and horizontally extending surfaces of the vertical channel material. ### Claim 8 (depends on 1) The device of claim 1, wherein the vertical channel material comprises an oxide semiconductor material. ### Claim 9 (depends on 1) The device of claim 1, wherein the conductive material is separated from the conductive line by the dielectric material. ### Claim 10 A device, comprising: a conductive line; a passivation material over the conductive line; and a vertical channel material on sides of the passivation material, a first interface between the vertical channel material and the conductive line extending in a first direction, and a second interface between the vertical channel material and the conductive line extending in a second direction different than the first direction. ### Claim 11 (depends on 10) The device of claim 10, wherein the second direction is substantially perpendicular to the first direction. ### Claim 12 (depends on 10) The device of claim 10, wherein a vertically lowermost surface of the channel material is below a vertically uppermost surface of the conductive line. ### Claim 13 (depends on 10) The device of claim 10, wherein the vertical channel material vertically extends into the conductive line a depth within a range of from about 0.5 nm to about 40 nm. ### Claim 14 (depends on 10) The device of claim 10, further comprising a conductive contact vertically overlying and contacting the vertical channel material and the passivation material. ### Claim 15 (depends on 14) The device of claim 14, wherein the conductive contact vertically overlies and contacts a dielectric material on sides of the vertical channel material. ### Claim 16 (depends on 10) The device of claim 10, further comprising a gate electrode on two sides of the vertical channel material. ### Claim 17 A device, comprising: a passivation material vertically overlying a conductive line, the passivation material vertically extending below an upper surface of the conductive line; a vertical channel material around at least a portion of the passivation material, at least a portion of the vertical channel material directly contacting the conductive line; a gate dielectric material around the vertical channel material; and a gate electrode around the gate dielectric material. ### Claim 18 (depends on 17) The device of claim 17, wherein the passivation material contacts a horizontally extending surface of the vertical channel material and vertically extending surfaces of the vertical channel material. ### Claim 19 (depends on 17) The device of claim 17, wherein the vertical channel material exhibits a U-shaped cross-section. ### Claim 20 (depends on 17) The device of claim 17, wherein the vertical channel material exhibits a bandgap greater than about 1.65 electronvolts (eV).