# US 12,002,886 B2 · Semiconductor device and display device including the same

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- Number: US 12,002,886 B2
- Document ID: US12002886B2
- Status: Granted
- Kind: B2
- Application number: 17/565,618
- Filed: 2021-12-30
- Published: 2022-04-21
- Granted: 2024-06-04
- Earliest claimed: 2011-12-14
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Seiichi Yoneda
- Web page: https://patentgrep.com/patent/US12002886B2

## CPC

- H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.

## Claims

### Claim 1

A display device comprising:
a pixel, the pixel comprising:
a light-emitting element comprising:
a pixel electrode;
an electroluminescent layer over the pixel electrode; and
an upper electrode over the electroluminescent layer;
a first transistor comprising an oxide semiconductor film;
a second transistor comprising a semiconductor film;
a first insulating film over the semiconductor film; and
a second insulating film over the first insulating film,
wherein the oxide semiconductor film is located over the second insulating film,
wherein the oxide semiconductor film comprises a channel formation region of the first transistor,
wherein the semiconductor film comprises a channel formation region of the second transistor,
wherein the semiconductor film is located over a substrate,
wherein the oxide semiconductor film and the semiconductor film overlap with each other,
wherein a gate electrode of the first transistor is electrically connected to a gate electrode of the second transistor,
wherein the pixel electrode comprises a region that does not overlap with the channel formation region of the second transistor,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the pixel electrode,
wherein the oxide semiconductor film is in contact with a side surface of one of a source electrode and a drain electrode of the first transistor, a top surface of the one of the source electrode and the drain electrode of the first transistor, a side surface of the other of the source electrode and the drain electrode of the first transistor, and a top surface of the other of the source electrode and the drain electrode of the first transistor,
wherein the oxide semiconductor film comprises indium, gallium, and zinc, and
wherein the oxide semiconductor film comprises a region that does not overlap with the gate electrode of the first transistor, the source electrode of the first transistor, and the drain electrode of the first transistor.

### Claim 2 (depends on 1)

The display device according to claim 1, wherein the gate electrode of the first transistor and the gate electrode of the second transistor are formed from a same layer.

### Claim 3

A display device comprising:
a pixel, the pixel comprising:
a first electrode of a display element;
a second electrode of the display element;
a first transistor comprising an oxide semiconductor film; and
a second transistor comprising a semiconductor film,
wherein the oxide semiconductor film comprises a channel formation region of the first transistor,
wherein the semiconductor film comprises a channel formation region of the second transistor,
wherein the oxide semiconductor film and the semiconductor film overlap with each other, when seen from a direction perpendicular to a surface of a substrate over which the semiconductor film is provided,
wherein a gate electrode of the first transistor is electrically connected to a gate electrode of the second transistor, and
wherein the oxide semiconductor film comprises a region that does not overlap with the gate electrode of the first transistor, a source electrode of the first transistor, and a drain electrode of the first transistor.

### Claim 4

A display device comprising:
a pixel, the pixel comprising:
a first electrode of a display element;
a second electrode of the display element;
a first transistor comprising an oxide semiconductor film;
a second transistor comprising a semiconductor film over a substrate and a base insulating film;
a first insulating film over the semiconductor film; and
a second insulating film over the first insulating film,
wherein the oxide semiconductor film is located over the second insulating film,
wherein the oxide semiconductor film comprises a channel formation region of the first transistor,
wherein the semiconductor film comprises a channel formation region of the second transistor,
wherein the oxide semiconductor film and the semiconductor film overlap with each other, when seen from a direction perpendicular to a surface of the substrate,
wherein a gate electrode of the first transistor is electrically connected to a gate electrode of the second transistor,
wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to the first electrode of the display element,
wherein the oxide semiconductor film is in contact with a side surface of one of a source electrode and a drain electrode of the first transistor, a top surface of the one of the source electrode and the drain electrode of the first transistor, a side surface of the other of the source electrode and the drain electrode of the first transistor, and a top surface of the other of the source electrode and the drain electrode of the first transistor,
wherein the oxide semiconductor film comprises indium, gallium, and zinc, and
wherein the oxide semiconductor film comprises a region that does not overlap with the gate electrode of the first transistor, a source electrode of the first transistor, and a drain electrode of the first transistor.

### Claim 5 (depends on 3)

The display device according to claim 3, wherein the gate electrode of the first transistor and the gate electrode of the second transistor are formed from a same layer.

### Claim 6 (depends on 4)

The display device according to claim 4, wherein the gate electrode of the first transistor and the gate electrode of the second transistor are formed from a same layer.