# US 12,002,882 B2 · Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

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- Number: US 12,002,882 B2
- Document ID: US12002882B2
- Status: Granted
- Kind: B2
- Application number: 18/157,478
- Filed: 2023-01-20
- Published: 2023-05-18
- Granted: 2024-06-04
- Earliest claimed: 2020-03-16
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Minhyun Lee; Minsu Seol; Yeonchoo Cho; Hyeonjin Shin
- Web page: https://patentgrep.com/patent/US12002882B2

## CPC

- H10D 30/477: {Vertical HEMTs or vertical HHMTs}
- H10D 30/485: {Vertical FETs having two-dimensional material channels}
- H10D 30/611: {having multiple independently-addressable gate electrodes influencing the same channel (FinFETs having multiple distinct gate electrodes H10D30/6215; multi-gate TFT H10D30/6733)}
- H10D 30/6728: {Vertical TFTs}
- H10D 62/80: characterised by the materials
- H10D 62/883: {Transition metal dichalcogenides, e.g. MoSe2}
- H10D 64/252: {for vertical or pseudo-vertical devices}
- H10D 84/837: {comprising vertical IGFETs}
- H10D 84/85: Complementary IGFETs, e.g. CMOS
- H10D 30/6733: {Multi-gate TFTs}
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.

## Claims

### Claim 1

A vertical type transistor comprising:
a substrate;
a first source/drain electrode layer on the substrate;
a second source/drain electrode layer above the first source/drain electrode layer;
a first gate electrode layer between the first and second source/drain electrode layers;
a first gate insulating film on a lateral side of the first gate electrode layer;
a lower spacer between the first source/drain electrode layer and the first gate electrode layer; and
a first channel layer comprising a 2D semiconductor, wherein
the first channel layer is on a lateral side of a hole, the hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer,
a length in a horizontal direction of the second source/drain electrode is greater than a length in the horizontal direction of the gate electrode, and
a bottom of first gate insulating film contacts a top surface of the lower spacer.

### Claim 2 (depends on 1)

The vertical type transistor of claim 1, wherein the first channel layer extends from a lateral surface of the first source/drain electrode layer onto a lateral surface of the second source/drain electrode layer, the lateral surface of the first source/drain electrode layer being exposed through the hole, and the lateral surface of the second source/drain electrode layer being exposed through the hole.

### Claim 3 (depends on 1)

The vertical type transistor of claim 1, wherein
the 2D semiconductor layer includes a plurality of monolayers stacked in an out-of-plane direction, and
the first source/drain electrode layer and the second source/drain electrode layer are electrically connected to the 2D semiconductor of the first channel layer in the out-of-plane direction.

### Claim 4 (depends on 2)

The vertical type transistor of claim 2, wherein the first channel layer does not cover a bottom surface of the hole.

### Claim 5 (depends on 2)

The vertical type transistor of claim 2, wherein the first channel layer covers a bottom surface of the hole.

### Claim 6 (depends on 1)

The vertical type transistor of claim 1, wherein the first channel layer is between the first source/drain electrode layer and the second source/drain electrode layer.

### Claim 7 (depends on 6)

The vertical type transistor of claim 6, wherein
the 2D semiconductor layer includes a plurality of monolayers stacked in an out-of-plane direction,
an in-plane direction is perpendicular to the out-of-plane direction, and
the first source/drain electrode layer and the second source/drain electrode layer are electrically connected to the 2D semiconductor of the first channel layer in the in-plane direction.

### Claim 8 (depends on 6)

The vertical type transistor of claim 6, further comprising
a second channel layer on (A) a lateral surface of the first source/drain electrode layer exposed through the hole, (B) a lateral surface of the first channel layer exposed through the hole, and (C) a lateral surface of the second source/drain electrode layer exposed through the hole,
wherein the second channel layer comprises a second 2D semiconductor.

### Claim 9 (depends on 8)

The vertical type transistor of claim 8, wherein
the second 2D semiconductor includes a plurality of monolayers stacked in an out-of-plane direction, and
the first source/drain electrode layer and the second source/drain electrode layer are electrically connected to the second 2D semiconductor of the second channel layer in an out-of-plane direction.

### Claim 10 (depends on 1)

The vertical type transistor of claim 1, further comprising:
an upper spacer between the second source/drain electrode layer and the first gate electrode layer,
wherein the lower spacer electrically isolates the first source/drain electrode layer from the first gate electrode layer, and
the upper spacer electrically isolates the second source/drain electrode layer from the first gate electrode layer.

### Claim 11 (depends on 10)

The vertical type transistor of claim 10, wherein
the lower spacer extends between the first source/drain electrode layer and the first gate insulating film, and
the upper spacer extends between the second source/drain electrode layer and the first gate insulating film.

### Claim 12 (depends on 11)

The vertical type transistor of claim 11, wherein the lower spacer, the first gate insulating film, and the upper spacer are a single structure.

### Claim 13 (depends on 10)

The vertical type transistor of claim 10, wherein
the lower spacer and the upper spacer comprise the same insulating material, and
the first gate insulating film and the lower spacer comprise different insulating materials.

### Claim 14 (depends on 1)

The vertical type transistor of claim 1, further comprising:
an inner insulating film filling the hole,
wherein the first channel layer surrounds the inner insulating film.

### Claim 15 (depends on 1)

The vertical type transistor of claim 1, further comprising:
a passivation film on the second source/drain electrode layer, wherein
a void is in the hole between the passivation film and the substrate.

### Claim 16 (depends on 15)

The vertical type transistor of claim 15, wherein the void is defined by (A) a bottom surface of the passivation film exposed by the hole, (B) a lateral surface of the first channel layer exposed by the hole, and (C) a top surface of the substrate exposed by the hole.

### Claim 17 (depends on 1)

The vertical type transistor of claim 1, further comprising:
an additional gate electrode layer in the hole; and
an additional gate insulating film between the additional gate electrode layer and the first channel layer.

### Claim 18 (depends on 17)

The vertical type transistor of claim 17, wherein
the additional gate insulating film is between the additional gate electrode layer and the substrate, and
the additional gate electrode layer is separated from the substrate by the additional gate insulating film.

### Claim 19 (depends on 1)

The vertical type transistor of claim 1, wherein the first channel layer comprises at least one of MoS2, MoSe2, MoTe2, WSe2, WS2, WTe2, ReS2, SnS2, SnSe2, PdSe2, PtS2, PtSe2, HfS2, HfSe2, HfTe2, TaS2, TaSe2, ZrS2, ZrSe2, ZrTe2, As2S3, As2Se3, As2Te3, Sb2S3, Sb2Se3, Bi2S3, Bi2Se3, Bi2Te3, GaS, GaSe, GaTe, GeS, GeSe, InSe, InTe, TiS3, TiBr3, ZrS3, ZrSe3, ZrTe3, black phosphorus, or phosphorene.

### Claim 20 (depends on 1)

The vertical type transistor of claim 1, wherein the first channel layer has a thickness of less than or equal to about 5 nanometers (nm).