# US 12,002,880 B2 · Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,880 B2 - Document ID: US12002880B2 - Status: Granted - Kind: B2 - Application number: 17/375,947 - Filed: 2021-07-14 - Published: 2022-02-03 - Granted: 2024-06-04 - Earliest claimed: 2020-07-16 - Assignees: Sumitomo Chemical Company, Limited - Applicants: Sumitomo Chemical Company, Limited - Inventors: Fumimasa Horikiri; Noboru Fukuhara - Web page: https://patentgrep.com/patent/US12002880B2 ## CPC - H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs} - H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT} - H10D 62/40: Crystalline structures - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10P 14/2908: {Nitrides} - H10P 14/2926: {Crystal orientations} - H10P 50/617: {of Group III-V materials} - H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates} - H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract There is provided a method for manufacturing a nitride-based high electron mobility transistor, including: providing a conductive member on a nitride semiconductor crystal substrate, outside an element region in a plan view; forming a mask on the substrate, the mask having an opening in at least one of a source recess etching region and a drain recess etching region; performing photoelectrochemical etching by irradiating the substrate with light to form at least one of a source recess and a drain recess, in a state where the substrate on which the conductive member is provided and the mask is formed is in contact with an etching solution containing an oxidizing agent that receives electrons; and forming an element separation structure of the high electron mobility transistor. ## Claims ### Claim 1 A method for manufacturing a nitride-based high electron mobility transistor, comprising: providing a conductive member on a nitride semiconductor crystal substrate, outside an element region of the high electron mobility transistor in a plan view; forming a mask on the nitride semiconductor crystal substrate, the mask having an opening in at least one of a source recess etching region where a source recess is formed, which is a recess in which a source electrode of the high electron mobility transistor is arranged, and a drain recess etching region where a drain recess is formed, which is a recess in which a drain electrode of the high electron mobility transistor is arranged; performing photoelectrochemical etching by irradiating the nitride semiconductor crystal substrate with light to form at least one of a source recess and a drain recess, in a state where the nitride semiconductor crystal substrate on which the conductive member is provided and the mask is formed is in contact with an etching solution containing an oxidizing agent that receives electrons; and forming an element separation structure of the high electron mobility transistor, wherein the nitride semiconductor crystal substrate includes on a base substrate, at least: a channel layer on which a two-dimensional electron gas is formed, a barrier layer formed on the channel layer, and a cap layer formed on the barrier layer, which is composed of a group III nitride having a bandgap smaller than that of a group III nitride constituting the barrier layer, in the photoelectrochemical etching, the cap layer is removed, and the conductive member is electrically connected to the source recess etching region or the drain recess etching region through at least one of the cap layer and the two-dimensional electron gas. ### Claim 2 (depends on 1) The method for manufacturing a nitride-based high electron mobility transistor according to claim 1, wherein the providing the conductive member, the forming the mask, the forming at least one of the source recess and the drain recess, and the forming the element separation structure are performed in an order described in claim 1. ### Claim 3 (depends on 1) The method for manufacturing a nitride-based high electron mobility transistor according to claim 1, wherein in the formation of the element separation structure, the element separation structure is formed so as to have an overlap in a plan view with at least one part of the source recess etching region and the drain recess etching region. ### Claim 4 (depends on 1) The method for manufacturing a nitride-based high electron mobility transistor according to claim 1, wherein in the formation of the element separation structure, the element separation structure is formed by any one of the techniques of ion implantation, dry etching, and photoelectrochemical etching. ### Claim 5 (depends on 1) The method for manufacturing a nitride-based high electron mobility transistor according to claim 1, wherein in the formation of the element separation structure, the element separation structure is formed so as not to have overlap with an arrangement area of the conductive member in a plan view. ### Claim 6 (depends on 5) The method for manufacturing a nitride-based high electron mobility transistor according to claim 5, wherein in the formation of the element separation structure, the element separation structure is formed by ion implantation using the conductive member as at least a part of a mask. ### Claim 7 (depends on 5) The method for manufacturing a nitride-based high electron mobility transistor according to claim 5, wherein in the formation of the element separation structure, the element separation structure is formed by dry etching, at least in a state where a mask is formed to cover the source recess or the drain recess and the conductive member so as not to be exposed. ### Claim 8 (depends on 5) The method for manufacturing a nitride-based high electron mobility transistor according to claim 5, wherein in the formation of the element separation structure, the element separation structure is formed by photoelectrochemical etching, in a state where a mask is formed to expose at least a part of the conductive member. ### Claim 9 (depends on 8) The method for manufacturing a nitride-based high electron mobility transistor according to claim 8, wherein photoelectrochemical etching in the formation of at least one of the source recess and the drain recess is performed using an acidic etching solution, and photoelectrochemical etching in the formation of the element separation structure is performed using an alkaline etching solution. ### Claim 10 (depends on 1) The method for manufacturing a nitride-based high electron mobility transistor according to claim 1, wherein in the formation of the element separation structure, the element separation structure is formed so as to have an overlap with an arrangement region of the conductive member in a plan view. ### Claim 11 (depends on 10) The method for manufacturing a nitride-based high electron mobility transistor according to claim 10, wherein the formation of the element separation structure is performed after removing the conductive member. ### Claim 12 (depends on 1) The method for manufacturing a nitride-based high electron mobility transistor according to claim 1, in the manufacturing of the nitride-based high electron mobility transistor, a plurality of high electron mobility transistors are manufactured, which are arranged in at least one direction of a gate length direction and a gate width direction on the nitride semiconductor crystal substrate, and the conductive member is arranged between at least one of the high electron mobility transistor elements adjacent to each other in the gate length direction and the high electron mobility transistor elements adjacent to each other in the gate width direction. ### Claim 13 (depends on 12) The method for manufacturing a nitride-based high electron mobility transistor according to claim 12, wherein the conductive member arranged between the high electron mobility transistor elements adjacent to each other in the gate length direction has a shape extending in the gate width direction. ### Claim 14 (depends on 12) The method for manufacturing a nitride-based high electron mobility transistor according to claim 12, wherein the conductive member arranged between the high electron mobility transistor elements adjacent to each other in the gate width direction has a shape extending in the gate length direction. ### Claim 15 (depends on 1) The method for manufacturing a nitride-based high electron mobility transistor according to claim 1, further comprising: forming another mask on the nitride semiconductor crystal substrate, the mask having an opening in a gate recess etching region where a gate recess is formed, which is a recess in which a gate electrode of the high electron mobility transistor is arranged; forming the gate recess by performing other photoelectrochemical etching by irradiating the nitride semiconductor crystal substrate with light, in a state where the nitride semiconductor crystal substrate on which the conductive member is provided and the mask is formed is in contact with an etching solution containing an oxidizing agent that receives electrons. ### Claim 16 (depends on 15) The method for manufacturing a nitride-based high electron mobility transistor according to claim 15, wherein in the photoelectrochemical etching, the cap layer is removed, and in the above other photoelectrochemical etching, the cap layer and a part of the barrier layer are removed. ### Claim 17 (depends on 15) The method for manufacturing a nitride-based high electron mobility transistor according to claim 15, wherein in the photoelectrochemical etching and the above other photoelectrochemical etching, light irradiation is performed using a same light source, and the photoelectrochemical etching is stopped by time control, and the above other photoelectrochemical etching is stopped by self-stop.