# US 12,002,859 B2 · Semiconductor device and method for producing a substrate for a semiconductor component, and use of indium during production of same

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- Number: US 12,002,859 B2
- Document ID: US12002859B2
- Status: Granted
- Kind: B2
- Application number: 18/039,668
- Filed: 2021-11-24
- Published: 2023-11-02
- Granted: 2024-06-04
- Earliest claimed: 2020-12-01
- Assignees: JENOPTIK Optical Systems GmbH; Forschungsverbund Berlin E.V.
- Applicants: JENOPTIK Optical Systems GmbH; Forschungsverbund Berlin e.V.
- Inventors: Jos Boschker; Christiane Frank-Rotsch; Thomas Schroeder; Martin Zorn
- Web page: https://patentgrep.com/patent/US12002859B2

## CPC

- H10D 62/854: further characterised by the dopants
- H10D 62/405: {Orientations of crystalline planes}
- H10P 14/2911: {Arsenides}
- H10P 14/2926: {Crystal orientations}
- H10P 14/3221: {Arsenides}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device comprising a substrate and an aluminium gallium arsenide-based semiconductor component, the substrate being monocrystalline, and the substrate having a gallium indium arsenide mixed crystal with the empirical formula GA(1-x)In(x)As, the indium content x being between 0.1 percent and 4 percent.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate,
wherein the substrate is monocrystalline,
wherein the substrate includes a gallium indium arsenide solid solution having the empirical formula Ga(1-x)In(x)As, where the indium content x is between 0.1 percent and 4 percent,
wherein the substrate is produced by a process comprising the manufacturing of a solid solution of the substrate in one step by the vertical gradient freeze (VGF) method for crystal growing; and
at least one aluminum gallium arsenide-based semiconductor component with an epitaxially produced semiconductor sequence,
wherein the semiconductor component is disposed on the substrate, and
wherein the semiconductor component is executed as a laser diode.

### Claim 2 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the indium content x of the substrate is between 0.2 percent and 2 percent.

### Claim 3 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the substrate takes the form of a wafer with a <100> crystal orientation.

### Claim 4 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the substrate is oriented at an angle between 0 degrees and 10 degrees relative to the <100> crystal orientation.

### Claim 5 (depends on 1)

The semiconductor device claim 1 wherein substrate takes the form of a wafer having a <110> crystal orientation, a <111> crystal orientation, a <211> crystal orientation or a <311> crystal orientation.

### Claim 6 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the substrate is doped with silicon, tellurium, selenium, sulfur, zinc, boron and/or carbon.

### Claim 7 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the substrate is n- or p-conductive, and/or wherein an n-dopant concentration and/or a p-dopant concentration of the substrate is within a range from 1016 to 1020 per cubic centimeter.

### Claim 8 (depends on 1)

The semiconductor device as claimed in claim 1, wherein it is free of stress-compensating layers and/or free of any addition of phosphorus to aluminum gallium arsenide during growth.

### Claim 9 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the semiconductor layer sequence of the semiconductor component includes at least one stressed layer, and wherein the stressed layer includes gallium aluminum arsenide having the empirical formula Ga(y)Al(1-y)As.

### Claim 10 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the lattice parameter of the substrate is adjusted by means of the indium content x such that the semiconductor layer sequence is unstressed overall.

### Claim 11 (depends on 1)

The semiconductor device as claimed in claim 1, wherein the lattice parameter of the substrate is matched to the lattice parameter of the semiconductor layer sequence of the semiconductor component or the lattice parameter of the substrate is adjusted by means of the indium content x such that the semiconductor layer sequence is under a predetermined mechanical stress.

### Claim 12 (depends on 1)

The semiconductor device as claimed in claim 1, wherein a multitude of semiconductor components are arranged in a stack.

### Claim 13

A semiconductor device comprising:
a monocrystalline substrate, the monocrystalline substrate comprising a gallium indium arsenide solid solution having the empirical formula Ga(1-x)In(x)As, where the indium content x is between 0.2 percent and 2 percent, and
at least one semiconductor component comprising aluminum gallium arsenide, wherein the at least one semiconductor component having an epitaxially produced semiconductor sequence, wherein the semiconductor component is disposed on the substrate, wherein a substrate lattice constant is equal to a semiconductor layer sequence lattice constant, and wherein the semiconductor component is executed as a laser diode.