# US 12,002,852 B2 · System and technique for creating implanted regions using multiple tilt angles > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,852 B2 - Document ID: US12002852B2 - Status: Granted - Kind: B2 - Application number: 17/940,536 - Filed: 2022-09-08 - Published: 2023-01-05 - Granted: 2024-06-04 - Earliest claimed: 2020-10-22 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Venkataramana R. Chavva; Hans-Joachim Gossmann - Web page: https://patentgrep.com/patent/US12002852B2 ## CPC - H10D 62/124: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions} - H01J 37/3171: {for ion implantation} - H10P 30/204: {into Group IV semiconductors} - H10P 30/208: {of electrically inactive species} - H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)} - H01J 2237/31703: Dosimetry - H10D 12/441: {Vertical IGBTs} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A system and method for creating various dopant concentration profiles using a single implant energy is disclosed. A plurality of implants are performed at the same implant energy but different tilt angles to implant ions at a variety of depths. The result of these implants may be a rectangular profile or a gradient profile. The resulting dopant concentration profile depends on the selection of tilt angles, doses and the number of implants. Varying tilt angle rather than varying implant energy to achieve implants of different depths may significantly improve efficiency and throughput, as the tilt angle can be changed faster than the implant energy can be changed. Additionally, this method may be performed by a number of different semiconductor processing apparatus. ## Claims ### Claim 1 A semiconductor processing apparatus, comprising: an ion source to generate ions; an accelerator to provide energy to the ions; a platen to hold a semiconductor workpiece; a platen orientation motor to adjust a tilt angle of the platen; and a controller; wherein the controller is configured to create an implanted region having rectangular concentration profile in the semiconductor workpiece, wherein the controller: sets an implant energy by adjusting a voltage supplied to the accelerator; sets a first tilt angle using the platen orientation motor; performs a first implant at the implant energy and the first tilt angle, wherein a maximum concentration of ions implanted in the semiconductor workpiece by the first implant occurs at a first depth; sets a second tilt angle using the platen orientation motor; performs a second implant at the implant energy and the second tilt angle, wherein a maximum concentration of ions implanted in the semiconductor workpiece by the second implant occurs at a second depth, less than the first depth; sets a third tilt angle using the platen orientation motor; and performs a third implant at the implant energy and the third tilt angle, wherein a maximum concentration of ions implanted in the semiconductor workpiece by the third implant occurs at a third depth, less than the first depth and the second depth; wherein the first tilt angle, the second tilt angle and the third tilt angle are selected such that a minimum concentration between the first depth and the third depth is greater than a predetermined minimum concentration, and a ratio of a maximum concentration to the minimum concentration is less than 5. ### Claim 2 (depends on 1) The semiconductor processing apparatus of claim 1, wherein the first implant is performed with a first dose, the second implant is performed with a second dose and the third implant is performed with a third dose, wherein the first dose, the second dose and the third dose are not all the same value. ### Claim 3 (depends on 1) The semiconductor processing apparatus of claim 1, wherein the controller performs one or more additional implants at additional tilt angles, between the first tilt angle and the third tilt angle, so as to reduce the ratio of the maximum concentration to the minimum concentration. ### Claim 4 (depends on 1) The semiconductor processing apparatus of claim 1, wherein the first tilt angle, the second tilt angle and the third tilt angle are selected such that the ratio of the maximum concentration to the minimum concentration is less than 3. ### Claim 5 (depends on 1) The semiconductor processing apparatus of claim 1, wherein the first tilt angle, the second tilt angle and the third tilt angle are selected such that a thickness of the implanted region, wherein the thickness is defined as a maximum depth having a concentration greater than the predetermined minimum concentration, less a minimum depth having the concentration greater than the predetermined minimum concentration, is greater than 1 μm. ### Claim 6 (depends on 5) The semiconductor processing apparatus of claim 5, wherein the thickness of the implanted region is greater than 2 μm. ### Claim 7 (depends on 1) The semiconductor processing apparatus of claim 1, wherein the controller performs one or more additional implants at additional tilt angles, between the first tilt angle and the third tilt angle, so as to reduce a ratio of a maximum concentration between the first depth and the third depth to the minimum concentration. ### Claim 8 A semiconductor processing apparatus, comprising: an ion source to generate ions; an accelerator to provide energy to the ions; a platen to hold a semiconductor workpiece; a platen orientation motor to adjust a tilt angle of the platen; and a controller; wherein the controller is configured to create an implanted region having rectangular concentration profile in the semiconductor workpiece, wherein the controller: sets an implant energy by adjusting a voltage supplied to the accelerator; sets a first tilt angle using the platen orientation motor; performs a first implant at the implant energy, a first dose and the first tilt angle, wherein a maximum concentration of ions implanted in the semiconductor workpiece by the first implant occurs at a first depth; sets a second tilt angle using the platen orientation motor; performs a second implant at the implant energy, a second dose and the second tilt angle, wherein a maximum concentration of ions implanted in the semiconductor workpiece by the second implant occurs at a second depth, less than the first depth; wherein the first tilt angle, the first dose, the second tilt angle, and the second dose are selected such that, after the first and second implants are performed, a concentration of implanted atoms decreases between a first depth and a second depth. ### Claim 9 (depends on 8) The semiconductor processing apparatus of claim 8, wherein, when plotted on a semi-log graph, a profile of the concentration of implanted atoms decreases roughly linearly between the first depth and the second depth. ### Claim 10 (depends on 8) The semiconductor processing apparatus of claim 8, wherein the first dose is different from the second dose. ### Claim 11 (depends on 8) The semiconductor processing apparatus of claim 8, wherein the controller: performs a third implant on the semiconductor workpiece, wherein the third implant is performed at the implant energy, a third dose and a third tilt angle; wherein the third tilt angle and the third dose are selected such that, after the first, second and third implants are performed, when plotted on a semi-log graph, a profile of the concentration of implanted atoms decreases roughly linearly between the first depth and the second depth. ### Claim 12 (depends on 11) The semiconductor processing apparatus of claim 11, wherein one of the implants is performed at a tilt angle to allow channeling of atoms in the semiconductor workpiece. ### Claim 13 A semiconductor processing apparatus, comprising: an ion source to generate ions; an accelerator to provide energy to the ions; a platen to hold a semiconductor workpiece; a platen orientation motor to adjust a tilt angle of the platen; and a controller; wherein the controller is configured to create an implanted region having rectangular concentration profile in the semiconductor workpiece, wherein the controller: sets an implant energy by adjusting a voltage supplied to the accelerator; sets a first tilt angle using the platen orientation motor; performs a first implant at the implant energy and the first tilt angle, wherein a maximum concentration of ions implanted in the semiconductor workpiece by the first implant occurs at a first depth; sets a second tilt angle using the platen orientation motor; and performs a second implant at the implant energy and the second tilt angle, wherein a maximum concentration of ions implanted in the semiconductor workpiece by the second implant occurs at a second depth, less than the first depth; wherein the first tilt angle and the second tilt angle are selected such that a minimum concentration between the first depth and the second depth is greater than a predetermined minimum concentration, and a ratio of a maximum concentration to the minimum concentration is less than 5. ### Claim 14 (depends on 13) The semiconductor processing apparatus of claim 13, wherein the first tilt angle and the second tilt angle are selected such that the ratio of the maximum concentration to the minimum concentration is less than 4. ### Claim 15 (depends on 13) The semiconductor processing apparatus of claim 13, wherein the first tilt angle and the second tilt are selected such that a thickness of the implanted region, wherein thickness is defined as a maximum depth having a concentration greater than the predetermined minimum concentration, less a minimum depth having the concentration greater than the predetermined minimum concentration, is greater than 1 μm.