# US 12,002,846 B2 · Integrated circuits having dielectric layers including an anti-reflective coating

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- Number: US 12,002,846 B2
- Document ID: US12002846B2
- Status: Granted
- Kind: B2
- Application number: 17/500,096
- Filed: 2021-10-13
- Published: 2022-03-03
- Granted: 2024-06-04
- Earliest claimed: 2019-09-26
- Assignees: Texas Instruments Incorporated
- Applicants: Texas Instruments Incorporated
- Inventors: Poornika Fernandes; David Matthew Curran; Stephen Arlon Meisner; Bhaskar Srinivasan; Guruvayurappan S. Mathur; Scott William Jessen; Shih Chang Chang; Russell Duane Fields; Thomas Terrance Lynch
- Web page: https://patentgrep.com/patent/US12002846B2

## CPC

- H10D 1/692: {Electrodes}
- H10W 20/496: {Capacitor integral with wiring layers}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/6927: {the material being a silicon oxynitride, e.g. SiON or SiON:H}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In some examples, an integrated circuit comprises a substrate; a first metal layer and a second metal layer positioned above the substrate; a first composite dielectric layer located on the first metal layer, wherein the first composite dielectric layer comprises a first anti-reflective coating; a second composite dielectric layer positioned on the second metal layer, wherein the second composite dielectric layer comprises a second anti-reflective coating; and a capacitor metal layer disposed over the first composite dielectric layer.

## Claims

### Claim 1

An integrated circuit, comprising:
a substrate;
a metal layer positioned above the substrate;
a composite dielectric layer located on the metal layer, wherein the composite dielectric layer comprises an anti-reflective coating between first and second silicon oxide layers and has a first perimeter;
a capacitor dielectric located on the second silicon oxide layer of the composite dielectric layer and having a different second perimeter; and
a capacitor metal layer disposed on the capacitor dielectric.

### Claim 2 (depends on 1)

The integrated circuit of claim 1, wherein the capacitor metal layer has the second perimeter.

### Claim 3 (depends on 1)

The integrated circuit of claim 1, wherein the capacitor metal layer comprises titanium nitride.

### Claim 4 (depends on 1)

The integrated circuit of claim 1, wherein the anti-reflective coating comprises silicon oxynitride.

### Claim 5 (depends on 1)

The integrated circuit of claim 1, wherein the anti-reflective coating has an index of refraction in a range of 1.7 to 2.1.

### Claim 6 (depends on 1)

The integrated circuit of claim 1, wherein the anti-reflective coating has a thickness in a range of 30 nm to 32 nm.

### Claim 7 (depends on 1)

The integrated circuit of claim 1, wherein the capacitor dielectric comprises a silicon nitride layer and the composite dielectric layer includes the anti-reflective coating comprising silicon oxynitride between the first and second silicon oxide layers.

### Claim 8 (depends on 1)

The integrated circuit of claim 1, wherein the composite dielectric layer comprises a silicon nitride layer, and the silicon nitride layer is located directly on the second silicon oxide layer.

### Claim 9

An integrated circuit, comprising:
a substrate;
a first metal layer located over the substrate;
a capacitor including the first metal layer and a four-layer dielectric stack located on the first metal layer, the four-layer dielectric stack including:
a first silicon oxide layer on the first metal layer;
a silicon oxynitride layer on the first silicon oxide layer;
a second silicon oxide layer on the silicon oxynitride layer; and
a silicon nitride layer on the second silicon oxide layer; and
the capacitor further including a capacitor metal layer disposed on the silicon nitride layer, wherein the capacitor metal layer and the silicon nitride layer have a first lateral dimension in a first direction and the first silicon oxide layer, silicon oxynitride layer, and second silicon oxide layer have a second lateral dimension in the first direction, the second lateral dimension greater than the first lateral dimension.

### Claim 10 (depends on 9)

The integrated circuit of claim 9, wherein a thickness of the silicon nitride layer is thicker than a thickness of the silicon oxynitride layer which is thicker than a thickness of the first silicon oxide layer and a thickness of the second silicon oxide layer.

### Claim 11

An integrated circuit, comprising:
a substrate with a first metal interconnect layer;
a metal structure of a second metal interconnect layer, the metal structure having a first width located over the substrate;
a capacitor including the metal structure and a four-layer dielectric stack located on the metal structure, the four-layer dielectric stack including:
a first oxide layer of the first width on the metal structure;
an antireflective coating of the first width on the first oxide layer;
a second oxide layer of the first width on the antireflective coating; and
a nitride-containing layer of a second width less than the first width on the second oxide layer;
the capacitor further including a capacitor metal layer of the second width disposed on the nitride-containing layer; and
a third metal interconnect layer over the capacitor.

### Claim 12 (depends on 11)

The integrated circuit of claim 11, wherein the nitride-containing layer comprises silicon nitride.

### Claim 13 (depends on 11)

The integrated circuit of claim 11, wherein the nitride-containing layer comprises silicon oxynitride.

### Claim 14 (depends on 11)

The integrated circuit of claim 11, wherein a thickness of the nitride-containing layer is thicker than a thickness of the antireflective coating which is thicker than a thickness of the first oxide layer and a thickness of the second oxide layer.

### Claim 15 (depends on 11)

The integrated circuit of claim 11, wherein the capacitor metal layer comprises titanium nitride.

### Claim 16 (depends on 11)

The integrated circuit of claim 11, wherein the antireflective coating comprises silicon oxynitride.