# US 12,002,841 B2 · Optoelectronic device comprising two wire-shaped light-emitting diodes each having a layer that limits the leakage currents > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,841 B2 - Document ID: US12002841B2 - Status: Granted - Kind: B2 - Application number: 17/613,699 - Filed: 2020-05-28 - Published: 2022-07-21 - Granted: 2024-06-04 - Earliest claimed: 2019-05-28 - Assignees: Aledia - Applicants: Aledia - Inventors: Florian Dupont; Jérôme Napierala - Web page: https://patentgrep.com/patent/US12002841B2 ## CPC - H10H 20/818: within the light-emitting regions - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 29/14: comprising multiple light-emitting semiconductor components - H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/825: containing nitrogen, e.g. GaN - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another. ## Claims ### Claim 1 An optoelectronic device including a substrate defining a support face, at least one first light-emitting diode and one second light-emitting diode adjacent to each other, and formed on the support face, the first light-emitting diode and the second light-emitting diode each comprising: a first semiconductor portion doped according to a first type of doping having a generally wire shape elongated along a longitudinal axis extending in a first direction oriented transversely to the support face and having lateral surfaces generally parallel to the longitudinal axis; an active portion arranged at least in part on a top end of the first semiconductor portion, opposite the length of the axis to a lower end of the first semiconductor portion turned towards the support face; a second semiconductor portion doped according to a second type of doping and arranged, at least in part, on all or part of the active portion; and an electrically resistive layer, whose electrical resistance is greater than that of the active portion, covering at least all or part of the lateral surfaces of the first semiconductor portion and all or part of the surface of the top end of the first semiconductor portion not covered by the active portion, the electrically resistive layer of the first light-emitting diode and the electrically resistive layer of the second light-emitting diode being separated from each other. ### Claim 2 (depends on 1) The optoelectronic device according to claim 1, wherein the electrically resistive layer is configured so as to be able to prevent formation of a material by epitaxy on its free surfaces. ### Claim 3 (depends on 1) The optoelectronic device according to claim 1, wherein the electrically resistive layer is electrically insulating. ### Claim 4 (depends on 1) The optoelectronic device according to claim 1, wherein the electrically resistive layer is transparent to all or part of the light radiation emitted by the active portion. ### Claim 5 (depends on 1) The optoelectronic device according to claim 1, wherein for each of the first and second light-emitting diodes, the electrically resistive layer does not laterally cover the active portion. ### Claim 6 (depends on 1) The optoelectronic device according to claim 1, wherein for each of the first and second light-emitting diodes, the electrically resistive layer does not laterally cover the second semiconductor portion. ### Claim 7 (depends on 1) The optoelectronic device according to claim 1, wherein for each of the first and second light-emitting diodes, the electrically resistive layer and the active portion cover, by continuity or overlap, the first semiconductor portion. ### Claim 8 (depends on 1) The optoelectronic device according to claim 1, wherein for each of the first and second light-emitting diodes, the electrically resistive layer has a thickness comprised between a value less than a few angstroms and a value greater than about 200 nm. ### Claim 9 (depends on 1) The optoelectronic device according to claim 1, wherein for at least one of the first and second light-emitting diodes, the electrically resistive layer covers all of the lateral surfaces of the first semiconductor portion without laterally covering the active portion, the active portion covers the entire top end of the first semiconductor portion without covering the electrically resistive layer, and the second semiconductor portion covers the upper part and the lateral walls of the active portion until reaching the electrically resistive layer. ### Claim 10 (depends on 1) The optoelectronic device according to claim 1, wherein for at least one of the first and second light-emitting diodes, the electrically resistive layer covers all of the lateral surfaces of the first semiconductor portion without laterally covering the active portion, the active portion covers the entire top end of the first semiconductor portion and the entire free surfaces of the electrically resistive layer, and the second semiconductor portion covers the upper part and the lateral walls of the active portion. ### Claim 11 (depends on 1) The optoelectronic device according to claim 1, wherein for at least one of the first and second light-emitting diodes, the electrically resistive layer covers all of the lateral surfaces of the first semiconductor portion without laterally covering the active portion, the active portion covers the entire top end of the first semiconductor portion without covering the electrically resistive layer, and the second semiconductor portion covers the upper part and the lateral walls of the active portion and the free surfaces of the electrically resistive layer. ### Claim 12 A method for manufacturing an optoelectronic device, the method including the following successive steps of: a) forming a substrate delimiting a support face; b) forming at least one first semiconductor portion of at least one first light-emitting diode and one second light-emitting diode adjacent to each other, said at least one first semiconductor portion being doped according to a first type of doping, from the support face and having a wire shape elongated along a longitudinal axis extending in a first direction oriented transversely to the support face, such that the first semiconductor portion comprises a top end opposite the length of the axis to a lower end of the first semiconductor portion facing the support face of the substrate, c) forming an electrically resistive layer whose electrical resistance is greater than that of an active portion of each of the first and second light-emitting diodes, on all or part of the free surface of the intermediate structure obtained in step b) of the first light-emitting diode and on all or part of the free surface of the intermediate structure obtained in step b) of the second light-emitting diode, d) etching a first end of the electrically resistive layer located at the top end of the first semiconductor portion of the first light-emitting diode and at the level of the first portion semiconductor of the second light-emitting diode, the etching completely passing through the electrically resistive layer so as to expose the top end of the first semiconductor portion, e) forming said active portion of the first light-emitting diode and of the second light-emitting diode, obtained at least in part on the top end exposed to the first semiconductor portion of the first light-emitting diode and of the second light-emitting diode, and f) forming a second semiconductor portion of the first light-emitting diode and of the second light-emitting diode, obtained at least in part on all or part of the active portion, wherein at the end of one of steps c) and d), the electrically resistive layer of the first light-emitting diode, and the electrically resistive layer of the second light-emitting diode are separated from each other. ### Claim 13 (depends on 12) The manufacturing method according to claim 12, wherein step d) is carried out by dry etching. ### Claim 14 (depends on 12) The manufacturing method according to claim 12, wherein step d) is implemented by a directional etching method. ### Claim 15 (depends on 12) The manufacturing method according to claim 12, wherein the etching step of step d) is implemented by a first dry sub-etching not completely passing through the electrically resistive layer and by a second wet sub-etching exposing the top end of the first semiconductor portion. ### Claim 16 (depends on 12) The manufacturing method according to claim 12, wherein step e) and/or step f) is carried out by epitaxial growth.