# US 12,002,840 B2 · Light emitting element and manufacturing method of light emitting element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,840 B2 - Document ID: US12002840B2 - Status: Granted - Kind: B2 - Application number: 17/577,598 - Filed: 2022-01-18 - Published: 2022-05-05 - Granted: 2024-06-04 - Earliest claimed: 2019-07-30 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Takako Suga; Takeshi Uchida; Takeshi Yoshioka - Web page: https://patentgrep.com/patent/US12002840B2 ## CPC - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies - H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors - H10H 20/8142: {forming resonant cavity structures} - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/8512: {Wavelength conversion materials} - H10H 20/862: {Resonant cavity structures (formed by reflecting means in the bodies H10H20/8142)} - H10H 20/034: {of coatings} - H10H 20/0361: {of wavelength conversion means} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/825: containing nitrogen, e.g. GaN - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract The light emitting element according to the present disclosure comprises a first active layer that emits light having a first wavelength by injecting current, a second active layer that emits light having a second wavelength different from the first wavelength by absorbing the light having the first wavelength, and a first reflecting mirror in which a reflectance of light having the first wavelength is higher than a reflectance of light having the second wavelength, wherein the first reflecting mirror is disposed at a position closer to an emission end, from which the light emitted by the first active layer or the second active layer exits outside, than the first active layer and the second active layer. ## Claims ### Claim 1 A light emitting element comprising: a first active layer that emits light having a first wavelength by injecting current; a second active layer that emits light having a second wavelength different from the first wavelength by absorbing the light having the first wavelength; and a first reflecting mirror in which a reflectance of the light having the first wavelength is higher than a reflectance of the light having the second wavelength, wherein the first reflecting mirror is disposed at a position closer to an emission end, from which the light emitted by the first active layer or the second active layer exits outside, than the first active layer and the second active layer, wherein the light emitting element further comprises, in a plan view, a first region and a second region, wherein the first active layer and the second active layer are disposed in each of the first region and the second region, wherein an emitting amount of the light having the first wavelength is greater than an emitting amount of the light having the second wavelength in the first region, and wherein an emitting amount of the light having the second wavelength is greater than an emitting amount of the light having the first wavelength in the second region. ### Claim 2 (depends on 1) The light emitting element according to claim 1, wherein the first active layer is disposed closer to the emission end than the second active layer. ### Claim 3 (depends on 1) The light emitting element according to claim 1, further comprising a second reflecting mirror in which a reflectance of the light having the first wavelength is higher than a reflectance of the light having the second wavelength, wherein the second reflecting mirror is disposed on a side opposite to the first reflecting mirror with respect to the first active layer and the second active layer. ### Claim 4 (depends on 3) The light emitting element according to claim 3, wherein the first reflecting mirror and the second reflecting mirror constitute a resonator for the light having the first wavelength. ### Claim 5 (depends on 4) The light emitting element according to claim 4, wherein an absorptance of the light having the first wavelength in the second active layer is 3% to 7%. ### Claim 6 (depends on 4) The light emitting element according to claim 4, wherein an absorptance of the light having the first wavelength in the second active layer is 4% to 6%. ### Claim 7 (depends on 1) The light emitting element according to claim 1, wherein the first active layer is inserted between a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type opposite to the first conductivity type. ### Claim 8 (depends on 7) The light emitting element according to claim 7, wherein the second active layer is inserted between a semiconductor layer of the first conductivity type or an i-type and a semiconductor layer of the first conductivity type. ### Claim 9 (depends on 1) The light emitting element according to claim 1, further comprising a substrate, wherein the first active layer, the second active layer, and the first reflecting mirror are stacked on the substrate, and wherein a p-type dopant is not doped in a semiconductor layer disposed between the substrate and the first or second active layer disposed farther from the substrate. ### Claim 10 (depends on 1) The light emitting element according to claim 1, wherein, in the plan view, the first reflecting mirror is disposed in the second region, and the first reflecting mirror is not disposed in the first region. ### Claim 11 (depends on 1) The light emitting element according to claim 1, further comprising a third reflecting mirror in which a reflectance of the light having the second wavelength is higher than a reflectance of the light having the first wavelength, wherein, in the plan view, the third reflecting mirror is disposed in the first region. ### Claim 12 (depends on 1) The light emitting element according to claim 1, further comprising, in the plan view, a third region from which light having a third wavelength different from the first wavelength and the second wavelength is emitted, wherein an emitting amount of the light having the third wavelength is greater than an emitting amount of the light having the first wavelength and an emitting amount of the light having the second wavelength in the third region. ### Claim 13 (depends on 12) The light emitting element according to claim 12, further comprising a third active layer that emits the light having the third wavelength in the third region, wherein the third active layer is disposed at a position closer to the emission end than the first active layer. ### Claim 14 (depends on 12) The light emitting element according to claim 12, wherein the light having the first wavelength is blue light, the light of the second wavelength is green light, and the light of the third wavelength is red light. ### Claim 15 (depends on 1) The light emitting element according to claim 1, wherein the first reflecting mirror is a distributed Bragg reflecting mirror including a plurality of dielectric layers having different refractive indices. ### Claim 16 A manufacturing method of a light emitting element comprising: forming a second active layer that emits light having a second wavelength different from a first wavelength by absorbing the light having the first wavelength; forming a first active layer that emits the light having the first wavelength by injecting current; and forming a first reflecting mirror in which a reflectance of the light having the first wavelength is higher than a reflectance of the light having the second wavelength, wherein the first reflecting mirror is disposed at a position closer to an emission end, from which the light emitted by the first active layer or the second active layer exits outside, than the first active layer and the second active layer, wherein the light emitting element further comprises, in a plan view, a first region and a second region, wherein the first active layer and the second active layer are disposed in each of the first region and the second region, wherein an emitting amount of the light having the first wavelength is greater than an emitting amount of the light having the second wavelength in the first region, and wherein an emitting amount of the light having the second wavelength is greater than an emitting amount of the light having the first wavelength in the second region. ### Claim 17 (depends on 1) The light emitting element according to claim 1, wherein the light having the first wavelength is blue light. ### Claim 18 (depends on 17) The light emitting element according to claim 17, wherein the light having the second wavelength is green light.