# US 12,002,835 B2 · Backside illuminated image sensor and method of manufacturing the same

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- Number: US 12,002,835 B2
- Document ID: US12002835B2
- Status: Granted
- Kind: B2
- Application number: 17/460,961
- Filed: 2021-08-30
- Published: 2022-03-03
- Granted: 2024-06-04
- Earliest claimed: 2020-08-31
- Assignees: DB HiTek Co., Ltd.
- Applicants: Db Hitek Co., Ltd.
- Inventors: Chang Hun Han
- Web page: https://patentgrep.com/patent/US12002835B2

## CPC

- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/805: {Coatings}
- H10F 39/8057: {Optical shielding}
- H10F 39/811: {Interconnections}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A backside illuminated image sensor and a method of manufacturing the same are disclosed. The backside illuminated image sensor includes a substrate having a frontside surface, a backside surface and a recess formed in a backside surface portion thereof, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, a second bonding pad formed with a constant thickness on a bottom surface and an inner side surface of the recess to form a second recess in the recess and electrically connected with the bonding pad, and a third bonding pad formed in the second recess to fill the second recess.

## Claims

### Claim 1

A backside illuminated image sensor comprising:
a substrate having a frontside surface and a backside surface, and the substrate defining a recess formed in a backside surface portion thereof;
at least one pixel region disposed in the substrate;
an insulating layer disposed on the frontside surface of the substrate;
a bonding pad disposed on a frontside surface of the insulating layer;
a second bonding pad having a constant thickness and disposed on a bottom surface and an inner side surface of the recess, the second bonding pad defining a second recess formed within the recess and being electrically connected with the bonding pad;
a third bonding pad formed in the second recess and arranged to fill the second recess; and
an anti-reflective layer disposed on the backside surface of the substrate and the bottom surface and the inner side surface of the recess,
wherein the second bonding pad is formed on the anti-reflective layer,
the anti-reflective layer, the substrate and the insulating layer have a first through-hole, a second through-hole and a third through-hole for exposing a portion of a backside surface of the bonding pad, respectively, and
the second bonding pad comprises a connecting portion formed on inner side surfaces of the first through-hole, the second through-hole and the third through-hole, and the exposed portion of the backside surface of the bonding pad.

### Claim 2 (depends on 1)

The backside illuminated image sensor of claim 1, wherein the second bonding pad comprises an edge portion formed on a second backside surface portion of the substrate adjacent to the recess.

### Claim 3 (depends on 2)

The backside illuminated image sensor of claim 2, wherein the third bonding pad has a thickness equal to a depth of the second recess.

### Claim 4 (depends on 3)

The backside illuminated image sensor of claim 3, further comprising:
a light-blocking pattern layer formed on the backside surface of the substrate and having openings corresponding to the pixel regions, respectively,
wherein the thickness of the second bonding pad is the same as a thickness of the light-blocking pattern layer.

### Claim 5 (depends on 2)

The backside illuminated image sensor of claim 2, wherein when the backside surface of the substrate faces upward, the third bonding pad is formed to protrude upward from the edge portion of the second bonding pad.

### Claim 6 (depends on 5)

The backside illuminated image sensor of claim 5, further comprising:
a light-blocking pattern layer formed on the backside surface of the substrate and having openings corresponding to the pixel regions, respectively; and
a planarization layer formed on the backside surface of the substrate and the light-blocking pattern layer,
wherein when the backside surface of the substrate faces upward, an upper surface of the third bonding pad has a same height as a height of an upper surface of the planarization layer.

### Claim 7 (depends on 1)

The backside illuminated image sensor of claim 1, further comprising:
a spacer formed on the inner side surfaces of the first through-hole, the second through-hole and the third through-hole,
wherein the connecting portion of the second bonding pad is formed on the spacer.

### Claim 8 (depends on 1)

The backside illuminated image sensor of claim 1, wherein the third bonding pad has a third recess corresponding to the first through-hole, the second through-hole and the third through-hole.

### Claim 9 (depends on 1)

The backside illuminated image sensor of claim 1, further comprising:
a second spacer formed between a portion of the anti-reflective layer formed on the inner side surface of the recess and the second bonding pad.

### Claim 10 (depends on 1)

The backside illuminated image sensor of claim 1, wherein a ring-shaped groove is formed on a backside surface of the third bonding pad.