# US 12,002,832 B2 · Solid-state image sensor, solid-state imaging device, and method of manufacturing solid-state image sensor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,832 B2 - Document ID: US12002832B2 - Status: Granted - Kind: B2 - Application number: 17/261,233 - Filed: 2019-07-23 - Published: 2021-09-02 - Granted: 2024-06-04 - Earliest claimed: 2018-07-26 - Assignees: Sony Corporation; Sony Semiconductor Solutions Corporation - Applicants: Sony Corporation; Sony Semiconductor Solutions Corporation - Inventors: Shinpei Fukuoka; Moe Takeo; Sho Nishida; Hideaki Togashi; Takushi Shigetoshi; Junpei Yamamoto - Web page: https://patentgrep.com/patent/US12002832B2 ## CPC - H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} - H10F 39/811: {Interconnections} - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12} - H10F 39/191: {Photoconductor image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region} - H10W 20/021: {of interconnections within wafers or substrates} - H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes} - H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates} - H10W 20/0265: {characterised by the sidewall insulation} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/2134: {TSVs extending from the semiconductor wafer into back-end-of-line layers} - H10W 20/481: {on the rear surfaces of the wafers or substrates} - H10F 39/199: {Back-illuminated image sensors} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction. ## Claims ### Claim 1 A solid-state image sensor, comprising: a semiconductor substrate; a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge; a photoelectric converter disposed above the semiconductor substrate and configured to convert light to charge; and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter, wherein, at an end portion on a photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at a center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction, and wherein, in a cross section of the through electrode cut along the through direction, an end portion on a photoelectric converter side of the conductor has two first branch portions split from a center axis of the conductor. ### Claim 2 (depends on 1) The solid-state image sensor according to claim 1, wherein the through electrode electrically connects the photoelectric converter with at least one or more pixel transistors disposed in the semiconductor substrate. ### Claim 3 (depends on 1) The solid-state image sensor according to claim 1, further comprising an insulating film covering an outer periphery of the conductor of the through electrode. ### Claim 4 (depends on 1) The solid-state image sensor according to claim 1, wherein the end portion on the photoelectric converter side of the conductor further has a depression positioned between the two first branch portions. ### Claim 5 (depends on 1) The solid-state image sensor according to claim 1, wherein each of the first branch portions is bent. ### Claim 6 (depends on 5) The solid-state image sensor according to claim 5, wherein each of the first branch portions is bent with a radius of curvature of 10 nm or more and 1000 nm or less. ### Claim 7 (depends on 1) The solid-state image sensor according to claim 1, wherein in a cross section of the through electrode cut along the through direction, an end portion on the charge accumulator side of the conductor has two second branch portions split from the center axis. ### Claim 8 (depends on 7) The solid-state image sensor according to claim 7, wherein each of the first branch portions and each of the second branch portions are bent. ### Claim 9 (depends on 8) The solid-state image sensor according to claim 8, wherein a radius of curvature of the first branch portion is larger than a radius of curvature of the second branch portion. ### Claim 10 (depends on 1) The solid-state image sensor according to claim 1, wherein the end portion on the photoelectric converter side of the conductor electrically connects with wiring including a transparent conductor. ### Claim 11 (depends on 1) The solid-state image sensor according to claim 1, wherein the photoelectric converter includes a common electrode shared between solid-state image sensors adjacent to each other, a readout electrode electrically connected to the through electrode, and a photoelectric conversion film sandwiched between the common electrode and the readout electrode and configured to convert light to charge. ### Claim 12 (depends on 11) The solid-state image sensor according to claim 11, wherein the photoelectric conversion film includes an organic material. ### Claim 13 (depends on 1) The solid-state image sensor according to claim 1, further comprising another photoelectric converter disposed in the semiconductor substrate and configured to convert light to charge. ### Claim 14 A solid-state image sensor, comprising: a semiconductor substrate; a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge; a photoelectric converter disposed above the semiconductor substrate and configured to convert light to charge; and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter, wherein at an end portion on a photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at a center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction, wherein the photoelectric converter includes: a common electrode shared between solid-state image sensors adjacent to each other, a readout electrode electrically connected to the through electrode, a photoelectric conversion film sandwiched between the common electrode and the readout electrode and configured to convert light to charge, and an accumulation electrode facing the common electrode with the photoelectric conversion film and an insulating film interposed therebetween. ### Claim 15 (depends on 14) The solid-state image sensor according to claim 14, wherein a gradient of an outer peripheral surface at the end portion on a photoelectric converter side of the conductor has an angle of 1° or more and 60° or less with respect to a center axis of the conductor extending in the through direction. ### Claim 16 (depends on 14) The solid-state image sensor according to claim 14, wherein the conductor has a substantially cylindrical shape. ### Claim 17 (depends on 16) The solid-state image sensor according to claim 16, wherein a diameter of the conductor in the cut section on a photoelectric converter side is 1.2 times or more a diameter of the conductor in the cut section on the charge accumulator side. ### Claim 18 (depends on 14) The solid-state image sensor according to claim 14, wherein, in a cross section of the through electrode cut along the through direction, the end portion on a photoelectric converter side of the conductor has two first branch portions split from a center axis of the conductor. ### Claim 19 (depends on 18) The solid-state image sensor according to claim 18, wherein the end portion on the photoelectric converter side of the conductor further has a depression positioned between the two first branch portions. ### Claim 20 A solid-state imaging device comprising a plurality of solid-state image sensors arranged in a matrix, each of the solid-state image sensors comprising: a semiconductor substrate; a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge; a photoelectric converter disposed above the semiconductor substrate and configured to convert light to charge; and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter, wherein, at an end portion on a photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at a center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction, and wherein, in a cross section of the through electrode cut along the through direction, an end portion on a photoelectric converter side of the conductor has two first branch portions split from a center axis of the conductor.