# US 12,002,830 B2 · Detection device and method for manufacturing the same

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- Number: US 12,002,830 B2
- Document ID: US12002830B2
- Status: Granted
- Kind: B2
- Application number: 17/483,296
- Filed: 2021-09-23
- Published: 2022-03-31
- Granted: 2024-06-04
- Earliest claimed: 2020-09-25
- Assignees: Japan Display Inc.
- Applicants: Japan Display Inc.
- Inventors: Satoshi Chinen; Morikazu Nomura
- Web page: https://patentgrep.com/patent/US12002830B2

## CPC

- H10F 39/8063: {Microlenses}
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 30/2235: {the devices comprising Group IV amorphous materials}
- H10F 39/182: {Colour image sensors}
- H10F 39/8057: {Optical shielding}
- H10F 77/407: {indirectly associated with the devices}
- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10F 77/953: {for devices having potential barriers}
- G06V 40/1318: {using electro-optical elements or layers, e.g. electroluminescent sensing}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G06V: IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING

## Abstract

According to an aspect, a detection device includes: a substrate; a plurality of photodiodes arranged on a first principal surface of the substrate; a protective film that covers the photodiodes; a plurality of lenses provided for each of the photodiodes so as to face the photodiode with the protective film interposed between the lenses and the photodiodes; and a projection provided between the lenses. A top of the projection is located at a position higher than a top of each of the lenses when viewed from the first principal surface.

## Claims

### Claim 1

A detection device comprising:
a substrate;
a plurality of photodiodes arranged on a first principal surface of the substrate;
a protective film that covers the photodiodes;
a plurality of lenses provided for each of the photodiodes so as to face the photodiode with the protective film interposed between the lenses and the photodiodes; and
a projection provided between the lenses, wherein
a top of the projection is located at a position higher than a top of each of the lenses when viewed from the first principal surface,
the projection includes a first projection provided in same layer as a layer of the lenses, and a second projection provided so as to overlap the first projection, and
a diameter of the second projection is less than a diameter of the first projection.

### Claim 2 (depends on 1)

The detection device according to claim 1, comprising:
a light-blocking layer that is provided between the photodiodes and the lenses and is provided with openings in regions overlapping the respective photodiodes; and
a light-transmitting resin layer provided between the light-blocking layer and the lenses, wherein
the lenses and the projection are provided on the light-transmitting resin layer, and
the lenses overlap the openings, and the projection overlaps a region of the light-blocking layer where the openings are not formed.

### Claim 3 (depends on 2)

The detection device according to claim 2, wherein the projection is higher than a height of the lenses in a direction orthogonal to the first principal surface.

### Claim 4 (depends on 1)

The detection device according to claim 1, wherein an overall length from the top to a bottom of the projection is greater than an overall length from the top to a bottom of the lens.

### Claim 5 (depends on 1)

The detection device according to claim 1, wherein the first projection is formed of the same material as that of the lenses.

### Claim 6 (depends on 1)

The detection device according to claim 1, wherein the projection has the same shape as a shape of the lenses in a plan view from a direction orthogonal to the substrate.

### Claim 7 (depends on 1)

The detection device according to claim 1, wherein
each of the photodiodes includes a plurality of partial photodiodes, in each of which a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer are staked,
the lenses are provided so as to overlap the respective partial photodiodes, and
the number of the projections is smaller than the number of the lenses.

### Claim 8 (depends on 7)

The detection device according to claim 7, wherein
the substrate has a detection region that is divided into a plurality of detection elements each of which is provided with one or more of the partial photodiodes,
the lenses are provided so as to overlap the partial photodiodes in the detection electrodes, and
the projection is provided at a boundary between adjacent detection elements of the detection elements.

### Claim 9 (depends on 8)

The detection device according to claim 8, wherein the projection is provided at a boundary between detection elements arranged in a first direction, of the detection elements.

### Claim 10 (depends on 9)

The detection device according to claim 9, wherein in one detection element column in which the detection elements are arranged in the first direction in the detection region, the projection is provided for every other boundary between the detection elements.

### Claim 11 (depends on 10)

The detection device according to claim 10, wherein
in another detection element column adjacent to the one detection element column, the projection is provided for every other boundary between the detection elements, and
in the adjacent two detection element columns, the projections are arranged in a staggered manner.

### Claim 12

A detection device comprising:
a substrate;
a plurality of photodiodes arranged on a first principal surface of the substrate;
a protective film that covers the photodiodes;
a plurality of lenses provided for each of the photodiodes so as to face the photodiode with the protective film interposed between the lenses and the photodiodes; and
a projection provided between the lenses,
wherein
a top of the projection is located at a position higher than a top of each of the lenses when viewed from the first principal surface,
each of the photodiodes includes a plurality of partial photodiodes, in each of which a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer are staked,
the lenses are provided so as to overlap the respective partial photodiodes,
the number of the projections is smaller than the number of the lenses,
the substrate has a detection region that is divided into a plurality of detection elements each of which is provided with one or more of the partial photodiodes,
the lenses are provided so as to overlap the partial photodiodes in the detection electrodes,
the projection is provided at a boundary between adjacent detection elements of the detection elements,
the projection is provided at a boundary between detection elements arranged in a first direction, of the detection elements, and
in one detection element column in which the detection elements are arranged in the first direction in the detection region, the projection is provided for every other boundary between the detection elements.

### Claim 13 (depends on 12)

The detection device according to claim 12, wherein
in another detection element column adjacent to the one detection element column, the projection is provided for every other boundary between the detection elements, and
in the adjacent two detection element columns, the projections are arranged in a staggered manner.
