# US 12,002,826 B2 · Solid-state imaging element and solid-state imaging apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,826 B2 - Document ID: US12002826B2 - Status: Granted - Kind: B2 - Application number: 18/146,674 - Filed: 2022-12-27 - Published: 2023-10-12 - Granted: 2024-06-04 - Earliest claimed: 2016-09-12 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Hiroaki Matsuo - Web page: https://patentgrep.com/patent/US12002826B2 ## CPC - H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region} - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} - H10F 39/192: {Colour image sensors} - H10F 39/80373: {characterised by the gate of the transistor} - H10F 39/80377: {characterised by the channel of the transistor, e.g. channel having a doping gradient} - H10K 39/32: Organic image sensors - H04N 25/62: Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels - H04N 25/65: applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A solid-state imaging element according to an embodiment of the present disclosure includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween. ## Claims ### Claim 1 A solid-state imaging element, comprising: a first electrode including a plurality of electrodes, wherein the plurality of electrodes includes a charge accumulation electrode and a charge readout electrode; a second electrode opposed to the first electrode; and a photoelectric conversion layer between the first electrode and the second electrode, wherein the first electrode has, at least in a portion, a first overlap section where the charge accumulation electrode overlaps with the charge readout electrode with a first insulation layer interposed therebetween, the charge accumulation electrode is configured to accumulate a charge generated in the photoelectric conversion layer, and the charge readout electrode is configured to readout the charge generated in the photoelectric conversion layer. ### Claim 2 (depends on 1) The solid-state imaging element according to claim 1, wherein the charge readout electrode includes a first electrically-conductive film and a second electrically-conductive film, the first electrically-conductive film is in a same layer as the charge accumulation electrode, the second electrically-conductive film is electrically coupled to the first electrically-conductive film and is in a layer different from the first electrically-conductive film, and the first overlap section includes a portion of the second electrically-conductive film and a portion of the charge accumulation electrode that are stacked with the first insulation layer interposed therebetween. ### Claim 3 (depends on 1) The solid-state imaging element according to claim 1, wherein the first electrode further includes, as the plurality of electrodes, a charge transfer electrode between the charge readout electrode and the charge accumulation electrode, the charge transfer electrode includes a third electrically-conductive film and two fourth electrically-conductive films, the third electrically-conductive film is in a same layer as the charge readout electrode and the charge accumulation electrode, the two fourth electrically-conductive films are electrically coupled to the third electrically-conductive film and are in a layer different from the third electrically-conductive film, and the two fourth electrically-conductive films form two overlap sections through stacking respective portions of the two fourth electrically-conductive films on the charge readout electrode and the charge accumulation electrode with the first insulation layer interposed therebetween. ### Claim 4 (depends on 1) The solid-state imaging element according to claim 1, wherein the charge accumulation electrode is divided into at least two portions, and has a second overlap section in which the at least two portions are partially stacked on each other with the first insulation layer interposed therebetween. ### Claim 5 (depends on 1) The solid-state imaging element according to claim 1, wherein the first electrode further includes a charge discharging electrode adjacent to the charge accumulation electrode, the charge discharging electrode includes a fifth electrically-conductive film and a sixth electrically-conductive film, the fifth electrically-conductive film is in a same layer as the charge accumulation electrode, the sixth electrically-conductive film is electrically coupled to the fifth electrically-conductive film and is in a layer different from the fifth electrically-conductive film, and the first overlap section includes a portion of the sixth electrically-conductive film and a portion of the charge accumulation electrode that are stacked with the first insulation layer interposed therebetween. ### Claim 6 (depends on 1) The solid-state imaging element according to claim 1, wherein the first electrode is on a side opposite to a light entering surface with respect to the photoelectric conversion layer. ### Claim 7 (depends on 1) The solid-state imaging element according to claim 1, wherein the first electrode is on a side on which a light entering surface is located with respect to the photoelectric conversion layer. ### Claim 8 (depends on 1) The solid-state imaging element according to claim 1, further comprising a second insulation layer between the first electrode and the photoelectric conversion layer, wherein the charge readout electrode is electrically coupled to the photoelectric conversion layer through an opening in the second insulation layer. ### Claim 9 (depends on 8) The solid-state imaging element according to claim 8, further comprising a semiconductor layer between the photoelectric conversion layer and the second insulation layer, wherein the charge readout electrode is electrically coupled to the photoelectric conversion layer through the semiconductor layer. ### Claim 10 (depends on 1) The solid-state imaging element according to claim 1, wherein a voltage is independently applied to each of the plurality of electrodes. ### Claim 11 (depends on 1) The solid-state imaging element according to claim 1, further comprising: an organic photoelectric converter including a plurality of photoelectric conversion layers, and a plurality of inorganic photoelectric converters configured to perform photoelectric conversion in a different wavelength range from the organic photoelectric converter. ### Claim 12 (depends on 11) The solid-state imaging element according to claim 11, wherein the plurality of inorganic photoelectric converters is embedded in a semiconductor substrate, and the organic photoelectric converter is on a side of a first surface of the semiconductor substrate. ### Claim 13 (depends on 12) The solid-state imaging element according to claim 12, further comprising a multilayer wiring layer on a side of a second surface is of the semiconductor substrate. ### Claim 14 (depends on 12) The solid-state imaging element according to claim 12, wherein the organic photoelectric converter is configured to perform the photoelectric conversion of green light, a first inorganic photoelectric converter of the plurality of inorganic photoelectric converters is configured to perform the photoelectric conversion of blue light, and a second inorganic photoelectric converter of the plurality of inorganic photoelectric converters is configured to perform the photoelectric conversion of red light. ### Claim 15 A solid-state imaging apparatus, comprising: a plurality of pixels each including at least one solid-state imaging element, ach of the at least one solid-state imaging element including: a first electrode including a plurality of electrodes, wherein the plurality of electrodes includes a charge accumulation electrode and a charge readout electrode; a second electrode opposed to the first electrode; and a photoelectric conversion layer between the first electrode and the second electrode, wherein the first electrode has, at least in a portion, an overlap section where the charge accumulation electrode overlaps with the charge readout electrode with a first insulation layer interposed therebetween, the charge accumulation electrode is configured to accumulate a charge generated in the photoelectric conversion layer, and the charge readout electrode is configured to readout the charge generated in the photoelectric conversion layer. ### Claim 16 (depends on 15) The solid-state imaging apparatus according to claim 15, wherein the first electrode is in each of the plurality of pixels.