# US 12,002,825 B2 · Solid-state imaging device and electronic apparatus with improved sensitivity

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- Number: US 12,002,825 B2
- Document ID: US12002825B2
- Status: Granted
- Kind: B2
- Application number: 17/263,221
- Filed: 2019-07-26
- Published: 2021-09-23
- Granted: 2024-06-04
- Earliest claimed: 2018-08-15
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: Ryo Fukui; Takashi Machida
- Web page: https://patentgrep.com/patent/US12002825B2

## CPC

- H10F 39/8033: {Photosensitive area}
- H04N 25/70: SSIS architectures; Circuits associated therewith
- H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H10F 39/182: {Colour image sensors}
- H10F 39/8053: {Colour filters}
- H10F 39/8057: {Optical shielding}
- H10F 39/8063: {Microlenses}
- H10F 39/807: {Pixel isolation structures}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

A solid-state imaging device of an embodiment of the present disclosure includes a semiconductor substrate having one surface and another surface opposed to the one surface, a photoelectric conversion section formed to be embedded in the semiconductor substrate, a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section, an n-type semiconductor region provided in the one surface of the semiconductor substrate, and a charge-voltage conversion section provided in the one surface of the semiconductor substrate. A charge generated in the photoelectric conversion section is transferred via the n-type semiconductor region to the charge holding section.

## Claims

### Claim 1

A solid-state imaging device comprising:
a semiconductor substrate having one surface and another surface opposed to the one surface;
a photoelectric conversion section formed to be embedded in the semiconductor substrate;
a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section;
an n-type semiconductor region provided in the one surface of the semiconductor substrate; and
a charge-voltage conversion section provided in the one surface of the semiconductor substrate,
wherein a charge generated in the photoelectric conversion section is transferred via the n-type semiconductor region to the charge holding section,
wherein the n-type semiconductor region extends to a position between the photoelectric conversion section and the charge holding section, and
wherein the charge holding section is surrounded by the n-type semiconductor region.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1, wherein the semiconductor substrate further includes a first separation film between the photoelectric conversion section and the charge holding section, the first separation film hindering movement of the charge.

### Claim 3 (depends on 2)

The solid-state imaging device according to claim 2, wherein the n-type semiconductor region and the first separation film are in contact with each other.

### Claim 4 (depends on 2)

The solid-state imaging device according to claim 2, wherein the first separation film extends to the one surface of the semiconductor substrate, and wherein the charge holding section is surrounded by the first separation film and the n-type semiconductor region.

### Claim 5 (depends on 1)

The solid-state imaging device according to claim 1, comprising an overflow gate on the one surface of the semiconductor substrate,
wherein the n-type semiconductor region is in contact with the overflow gate.

### Claim 6 (depends on 1)

The solid-state imaging device according to claim 1, comprising a plurality of pixels each provided with the photoelectric conversion section;
wherein the semiconductor substrate further includes a second separation film provided between the plurality of pixels, the second separation film hindering movement of the charge between the plurality of pixels.

### Claim 7 (depends on 6)

The solid-state imaging device according to claim 6, wherein the second separation film is provided between the one surface and the other surface of the semiconductor substrate.

### Claim 8 (depends on 2)

The solid-state imaging device according to claim 2, comprising a plurality of pixels each provided with the photoelectric conversion section, wherein the semiconductor substrate further includes a second separation film provided between the plurality of pixels, the second separation film hindering movement of the charge between the plurality of pixels, and wherein the first separation film and the second separation film are coupled to each other.

### Claim 9

A solid-state imaging device comprising:
a semiconductor substrate having one surface and another surface opposed to the one surface;
a photoelectric conversion section formed to be embedded in the semiconductor substrate;
a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section;
an n-type semiconductor region provided in the one surface of the semiconductor substrate;
a charge-voltage conversion section provided in the one surface of the semiconductor substrate; and
a first separation film provided between the photoelectric conversion section and the charge holding section,
wherein the first separation film overlaps, in a plan view, at least a portion of a gate of a transfer transistor provided between the photoelectric conversion section and the charge holding section,
wherein the n-type semiconductor region extends to a position between the photoelectric conversion section and the charge holding section, and
wherein the charge holding section is surrounded by the n-type semiconductor region.

### Claim 10

An electronic apparatus comprising a solid-state imaging device, the solid-state imaging device including:
a semiconductor substrate having one surface and another surface opposed to the one surface;
a photoelectric conversion section formed to be embedded in the semiconductor substrate;
a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section;
an n-type semiconductor region provided in the one surface of the semiconductor substrate; and
a charge-voltage conversion section provided in the one surface of the semiconductor substrate,
wherein a charge generated in the photoelectric conversion section is transferred via the n-type semiconductor region to the charge holding section
wherein the n-type semiconductor region extends to a position between the photoelectric conversion section and the charge holding section, and
wherein the charge holding section is surrounded by the n-type semiconductor region.

### Claim 11

An electronic apparatus comprising a solid-state imaging device, the solid-state imaging device including:
a semiconductor substrate having one surface and another surface opposed to the one surface;
a photoelectric conversion section formed to be embedded in the semiconductor substrate;
a charge holding section provided in the one surface of the semiconductor substrate while being stacked on the photoelectric conversion section;
an n-type semiconductor region provided in the one surface of the semiconductor substrate;
a charge-voltage conversion section provided in the one surface of the semiconductor substrate; and
a first separation film provided between the photoelectric conversion section and the charge holding section,
wherein the first separation film overlaps, in a plan view, at least a portion of a gate of a transfer transistor provided between the photoelectric conversion section and the charge holding section,
wherein the n-type semiconductor region extends to a position between the photoelectric conversion section and the charge holding section, and
wherein the charge holding section is surrounded by the n-type semiconductor region.