# US 12,002,823 B2 · Solid-state image sensor with imaging device blocks that each include imaging devices

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- Number: US 12,002,823 B2
- Document ID: US12002823B2
- Status: Granted
- Kind: B2
- Application number: 17/252,787
- Filed: 2019-06-07
- Published: 2021-08-26
- Granted: 2024-06-04
- Earliest claimed: 2018-07-03
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: Toshiaki Ono
- Web page: https://patentgrep.com/patent/US12002823B2

## CPC

- H04N 25/46: by combining or binning pixels
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors
- H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
- H10F 39/182: {Colour image sensors}
- H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}
- H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region}
- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/191: {Photoconductor image sensors}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/811: {Interconnections}
- H10K 39/32: Organic image sensors
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A solid-state image sensor includes a plurality of imaging device blocks each including P×Q imaging devices. In an imaging device block, first charge movement controlling electrodes are provided between the imaging devices, and second charge movement controlling electrodes are provided between the imaging device blocks. In the imaging device block, P imaging devices are arrayed along a first direction, and Q imaging devices are arrayed along a second direction. Charge accumulated in a photoelectric conversion layer of the (P−1)th imaging device from the first imaging device along the first direction is transferred to the photoelectric conversion layer of the Pth imaging device and read out together with charge accumulated in the photoelectric conversion layers of the Q Pth imaging devices, under the control of the first charge movement controlling electrodes.

## Claims

### Claim 1

A solid-state image sensor comprising:
a plurality of imaging device blocks each including P×Q (where P≥2, Q≥1) imaging devices, wherein
each of the imaging devices includes a photoelectric conversion portion that includes a photoelectric conversion layer, an insulating layer, and a charge accumulating electrode arranged opposed to the photoelectric conversion layer with an insulating layer interposed therebetween,
in each of the imaging device blocks, a first charge movement controlling electrode is provided between the imaging devices,
a second charge movement controlling electrode is provided between the imaging device blocks,
in the imaging device blocks, P imaging devices are arrayed along a first direction, and Q imaging device is arrayed along a second direction, and
charge accumulated in the photoelectric conversion layer of a (P−1)th imaging device from a first imaging device along the first direction is transferred to the photoelectric conversion layer of a Pth imaging device and read out together with charge accumulated in the photoelectric conversion layers of Q Pth imaging devices, under control of the first charge movement controlling electrode.

### Claim 2 (depends on 1)

The solid-state image sensor according to claim 1, wherein movement of charge accumulated in the photoelectric conversion layer between the imaging devices in the imaging device blocks adjacent to each other is inhibited under control of the second charge movement controlling electrode.

### Claim 3 (depends on 1)

The solid-state image sensor according to claim 1, wherein
the imaging device further includes a first electrode and a second electrode,
the photoelectric conversion portion is configured such that the first electrode, the photoelectric conversion layer, and the second electrode are stacked one on another,
the charge accumulating electrode is arranged with a space from the first electrode and arranged opposed to the photoelectric conversion layer with the insulating layer interposed therebetween, and
in the imaging device blocks, the first electrode of the Q imaging device configuring the Pth imaging device is shared.

### Claim 4 (depends on 3)

The solid-state image sensor according to claim 3, wherein
each of the imaging device blocks includes a control portion,
the control portion includes at least a floating diffusion layer and an amplification transistor, and
the shared first electrode is connected to the control portion.

### Claim 5 (depends on 1)

The solid-state image sensor according to claim 1, wherein
the plurality of imaging device blocks are arrayed in a two-dimensional matrix along the first direction and the second direction different from the first direction,
the second charge movement controlling electrode includes a (2−A)th charge movement controlling electrode positioned between the imaging devices configuring the imaging device blocks adjacent to each other along the first direction, and
movement of charge accumulated in the photoelectric conversion layer between the imaging devices of the imaging device blocks adjacent to each other along the first direction is inhibited under control of the (2−A)th charge movement controlling electrode.

### Claim 6 (depends on 5)

The solid-state image sensor according to claim 5, wherein
the second charge movement controlling electrode includes a (2−B)th charge movement controlling electrode positioned between the imaging devices configuring the imaging device blocks adjacent to each other along the second direction, and
movement of charge accumulated in the photoelectric conversion layer between the imaging devices of the imaging device blocks adjacent to each other along the second direction is inhibited under control of the (2−B)th charge movement controlling electrode.

### Claim 7 (depends on 5)

The solid-state image sensor according to claim 5, wherein the first charge movement controlling electrode includes, in the imaging device block, a (1−A)th charge movement controlling electrode positioned between the imaging devices adjacent to each other along the first direction and a (1−B)th charge movement controlling electrode positioned between the imaging devices adjacent to each other along the second direction.

### Claim 8 (depends on 6)

The solid-state image sensor according to claim 6, wherein, in the imaging device blocks adjacent to each other, the (2−B)th charge movement controlling electrodes adjacent to each other are connected to each other, and further, the (2−A)th charge movement controlling electrodes are connected to each other.

### Claim 9 (depends on 8)

The solid-state image sensor according to claim 8, wherein the first charge movement controlling electrode includes, in the imaging device block, a (1−A)th charge movement controlling electrode positioned between the imaging devices adjacent to each other along the first direction and a (1−B)th charge movement controlling electrode positioned between the imaging devices adjacent to each other along the second direction.

### Claim 10 (depends on 9)

The solid-state image sensor according to claim 9, wherein, in the imaging device block, the (1−A)th charge movement controlling electrode and the (1−B)th charge movement controlling electrode are connected to each other.

### Claim 11 (depends on 6)

The solid-state image sensor according to claim 6, wherein, in the imaging device block, the (2−B)th charge movement controlling electrodes adjacent to each other are connected to each other, and further, in the imaging device blocks adjacent to each other, the (2−B)th charge movement controlling electrodes adjacent to each other are connected to each other.

### Claim 12 (depends on 11)

The solid-state image sensor according to claim 11, wherein the first charge movement controlling electrode includes, in the imaging device block, a (1−A)th charge movement controlling electrode positioned between the imaging devices adjacent to each other along the first direction and a (1−B)th charge movement controlling electrode positioned between the imaging devices adjacent to each other along the second direction.

### Claim 13 (depends on 12)

The solid-state image sensor according to claim 12, wherein, in the imaging device block, the (1−B)th charge movement controlling electrodes are connected to each other.

### Claim 14 (depends on 1)

The solid-state image sensor according to claim 1, wherein the first charge movement controlling electrode and the second charge movement controlling electrode are provided in a region opposed to a region of the photoelectric conversion layer positioned between the imaging devices adjacent to each other, with the insulating layer interposed therebetween.

### Claim 15 (depends on 1)

The solid-state image sensor according to claim 1, wherein the first charge movement controlling electrode and the second charge movement controlling electrode are provided with a space from the second electrode, on a region of a photoelectric conversion region positioned between the imaging devices adjacent to each other.

### Claim 16 (depends on 1)

A solid-state image sensor comprising:
a stacked type imaging device including at least one of the imaging devices according claim 1.

### Claim 17 (depends on 16)

The solid-state image sensor according to claim 16, wherein
a lower imaging device block of at least one layer is provided below the plurality of imaging device block,
the lower imaging device block includes a plurality of imaging devices, and
a wavelength of light to be received by the imaging devices configuring the imaging device blocks and a wavelength of light to be received by the imaging devices configuring the lower imaging device blocks are different from each other.

### Claim 18 (depends on 16)

The solid-state image sensor according to claim 16, wherein the lower imaging device block is provided in two layers.

### Claim 19 (depends on 16)

The solid-state image sensor according to claim 16, wherein the plurality of imaging devices configuring the lower imaging device block include a shared floating diffusion layer.