# US 12,002,822 B2 · Metal-oxide-semiconductor capacitor based passive amplifier

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- Number: US 12,002,822 B2
- Document ID: US12002822B2
- Status: Granted
- Kind: B2
- Application number: 17/134,809
- Filed: 2020-12-28
- Published: 2022-06-30
- Granted: 2024-06-04
- Earliest claimed: 2020-12-28
- Assignees: Semiconductor Components Industries, LLC
- Applicants: Semiconductor Components Industries, LLC
- Inventors: Manuel H. Innocent
- Web page: https://patentgrep.com/patent/US12002822B2

## CPC

- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H03M 1/1245: {Details of sampling arrangements or methods}
- H03M 1/466: {using switched capacitors}
- H04N 25/59: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
- H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H03M: CODING; DECODING; CODE CONVERSION IN GENERAL (using fluidic means F15C4/00; optical analogue/digital converters G02F7/00; coding, decoding or code conversion, specially adapted for particular applications, see the relevant subclasses, e.g. G01D, G01R, G06F, G06T, G09G, G10L, G11B, G11C, H04B, H04L, H04M, H04N; ciphering or deciphering for cryptography or other purposes involving the need for secrecy G09C)
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

A passive amplifier is provided that includes an input sampling switch, a sampling capacitance, and metal-oxide-semiconductor capacitor devices. An input signal may be sampled onto the sampling capacitance by turning on the input sampling switch while the metal-oxide-semiconductor capacitors are activated. After the sampling phase, the metal-oxide-semiconductor capacitors are deactivated to provide a voltage gain. The voltage gain can be conditionally applied depending on the signal level of the sampled input.

## Claims

### Claim 1

An image sensor, comprising:
an image sensor pixel;
a column line configured to receive a signal from the image sensor pixel; and
a passive amplifier circuit comprising:
an input port configured to receive the signal from the column line;
an output port;
a sampling switch having a first terminal coupled to the input port and having a second terminal coupled to the output port; and
a metal-oxide-semiconductor capacitor having a gate terminal configured to receive a control signal and having source-drain terminals coupled to the output port.

### Claim 2 (depends on 1)

The image sensor of claim 1, wherein the passive amplifier circuit further comprises:
a capacitor having a first terminal coupled to the output port and having a second terminal configured to receive a reference voltage; and
an additional metal-oxide semiconductor capacitor having a gate terminal configured to receive an inverted version of the control signal and having source-drain terminals coupled to the output port.

### Claim 3 (depends on 2)

The image sensor of claim 2, wherein the metal-oxide-semiconductor capacitor comprises an n-type metal-oxide-semiconductor capacitor and wherein the additional metal-oxide-semiconductor capacitor comprises a p-type metal-oxide-semiconductor capacitor.

### Claim 4 (depends on 2)

The image sensor of claim 2, wherein the metal-oxide-semiconductor capacitor and the additional metal-oxide-semiconductor capacitor are activated during a charge sampling phase and are deactivated during an amplification phase.

### Claim 5 (depends on 4)

The image sensor of claim 4, wherein the reference voltage has a given voltage level during the charge sampling phase and has the given voltage level during the amplification phase.

### Claim 6 (depends on 4)

The image sensor of claim 4, wherein the reference voltage has a first voltage level during the charge sampling phase and has a second voltage level, different than the first voltage level, during the amplification phase.

### Claim 7 (depends on 2)

The image sensor of claim 2, wherein the passive amplifier circuit further comprising:
a comparator having an input coupled to the first terminal of the capacitor and an output on which the control signal is generated.

### Claim 8 (depends on 7)

The image sensor of claim 7, wherein the comparator is configured to deassert the control signal when the signal at the input port is within a predetermined voltage range.

### Claim 9

An amplifier, comprising:
an input port;
an output port;
a sampling switch having a first terminal coupled to the input port and having a second terminal coupled to the output port; and
a metal-oxide-semiconductor capacitor having source-drain terminals coupled to the output port and having a gate terminal configured to receive a control signal.

### Claim 10 (depends on 9)

The amplifier of claim 9, further comprising:
an additional metal-oxide-semiconductor capacitor having source-drain terminals coupled to the output port and having a gate terminal configured to receive an inverted version of the control signal.

### Claim 11 (depends on 10)

The amplifier of claim 10, further comprising:
a capacitor having a first terminal coupled to the output port and having a second terminal configured to receive a reference voltage.

### Claim 12 (depends on 11)

The amplifier of claim 11, wherein:
the control signal is driven high during a charge sampling operation;
the control signal is driven low during an amplification operation;
the reference voltage has a first voltage level during the charge sampling operation; and
the reference voltage has the first voltage level or a second voltage level, different than the first voltage level, during the amplification operation.

### Claim 13 (depends on 11)

The amplifier of claim 11, wherein:
the control signal is driven high during a sampling operation; and
the control signal is driven low during an amplification operation.

### Claim 14 (depends on 11)

The amplifier of claim 11, wherein:
the reference voltage has a first voltage level during the sampling operation; and
the reference voltage has the first voltage level or a second voltage level, different than the first voltage level, during the amplification operation.

### Claim 15 (depends on 10)

The amplifier of claim 10, wherein the metal-oxide-semiconductor capacitor comprises an n-type metal-oxide-semiconductor capacitor and wherein the additional metal-oxide-semiconductor capacitor comprises a p-type metal-oxide-semiconductor capacitor.

### Claim 16 (depends on 10)

The amplifier of claim 10, wherein the metal-oxide-semiconductor capacitor and the additional metal-oxide-semiconductor capacitor are activated during a first phase and are deactivated during a second phase different than the first phase.

### Claim 17 (depends on 16)

The amplifier of claim 16, wherein the first phase comprises a sampling phase and wherein the second phase comprises an amplification phase.

### Claim 18 (depends on 9)

The amplifier of claim 9, further comprising:
a comparator having an input coupled to the second terminal of the sampling switch and an output at which the control signal is produced.

### Claim 19 (depends on 18)

The amplifier of claim 18, wherein the comparator is configured to deassert the control signal when a signal at the input port is within a predetermined voltage range.

### Claim 20 (depends on 18)

The amplifier of claim 18, further comprising:
an inverter having an input coupled to the output of the comparator and to the gate terminal of the metal-oxide-semiconductor capacitor.
