# US 12,002,819 B2 · Display device

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- Number: US 12,002,819 B2
- Document ID: US12002819B2
- Status: Granted
- Kind: B2
- Application number: 17/400,530
- Filed: 2021-08-12
- Published: 2021-12-02
- Granted: 2024-06-04
- Earliest claimed: 2016-04-08
- Assignees: Innolux Corporation
- Applicants: InnoLux Corporation
- Inventors: KuanFeng Lee
- Web page: https://patentgrep.com/patent/US12002819B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/431: {having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A display device is disclosed, which includes: a substrate; a first transistor disposed on the substrate; and a second transistor disposed on the substrate. The first transistor includes: a first active layer; a first electrode and a second electrode electrically connecting to the first active layer; and a conducting layer at least partially covering one of the first electrode and the second electrode. The second transistor includes a second active layer. Herein, one of the first active layer and the second active layer includes a polysilicon layer, and the other one of the first active layer and the second active layer includes a metal oxide layer.

## Claims

### Claim 1

An electronic device, comprising:
a substrate;
a first gate electrode disposed on the substrate;
a gate insulating layer disposed on the first gate electrode;
a first active layer disposed on the gate insulating layer corresponding to the first gate electrode, wherein the first active layer comprises a polysilicon layer;
a first bottom insulating layer disposed on the first active layer;
a first top insulating layer disposed on the first bottom insulating layer; and
a second active layer disposed on the first top insulating layer , wherein the second active layer comprises a metal oxide layer.

### Claim 2 (depends on 1)

The electronic device of claim 1 wherein the first bottom insulating layer comprises silicon nitride, and the first top insulating layer comprises silicon oxide.

### Claim 3 (depends on 1)

The electronic device of claim 1. further comprising a first source electrode and a first drain electrode, wherein the first source electrode and the first drain electrode electrically connect to the first active layer.

### Claim 4 (depends on 1)

The electronic device of claim 1, further comprising a second source electrode and a second drain electrode, wherein the second source electrode and the second drain electrode electrically connect to the second active layer.

### Claim 5 (depends on 4)

The electronic device of claim 4, further comprising an insulating layer and a pixel electrode, wherein the insulating layer is disposed on the second source electrode and the second drain electrode, and the pixel electrode electrically connects to the second drain electrode.

### Claim 6 (depends on 1)

The electronic device of claim 1, wherein a thickness of the first active layer is different from a thickness of the second active layer in a cross-sectional view of the display device.

### Claim 7

A method of manufacturing an electronic device, comprising the steps of:
providing a substrate;
forming a first gate electrode on the substrate;
forming a gate insulating layer on the first gate electrode;
forming a first active layer on the gate insulating layer corresponding to the first gate electrode;
forming a first bottom insulating layer on the first active layer;
forming a first top insulating layer on the first bottom insulating layer; and
forming a second active layer on the first top insulating layer.

### Claim 8 (depends on 7)

The method of claim 7, further comprising the steps of:
forming a first source electrode electrically connecting to the first active layer, and
forming a first drain electrode electrically connecting to the first active layer.

### Claim 9 (depends on 7)

The method of claim 7, further comprising the steps of:
forming a second source electrode electrically connecting to the second active layer, and
forming a second drain electrode electrically connecting to the second active layer.

### Claim 10 (depends on 9)

The method of claim 9, further comprising the steps of:
forming an insulating layer on the second source electrode and the second drain electrode; and
forming a pixel electrode electrically connecting to the second drain electrode.

### Claim 11 (depends on 7)

The method of claim 7, wherein the first bottom insulating layer comprises silicon nitride, and the first top insulating layer comprises silicon oxide.

### Claim 12 (depends on 7)

The display device of claim 7, wherein a thickness of the first active layer is different from a thickness of the second active layer in a cross-sectional view of the display device.