# US 12,002,812 B2 · Method of producing a semiconductor component and semiconductor component

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- Number: US 12,002,812 B2
- Document ID: US12002812B2
- Status: Granted
- Kind: B2
- Application number: 17/678,580
- Filed: 2022-02-23
- Published: 2022-09-08
- Granted: 2024-06-04
- Earliest claimed: 2021-03-08
- Assignees: Infineon Technologies Dresden GmbH
- Applicants: Infineon Technologies Dresden GmbH & Co. KG
- Inventors: Dirk Meinhold; Steffen Bieselt
- Web page: https://patentgrep.com/patent/US12002812B2

## CPC

- B81C 1/00182: {Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer}
- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- B81C 1/00269: {Bonding of solid lids or wafers to the substrate}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3426: {Oxides}
- H10P 14/3456: {Polycrystalline}
- B81B 2201/025: Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
- B81B 2201/0264: Pressure sensors
- B81B 2203/0118: Cantilevers
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)

## Abstract

A method of producing a semiconductor component includes: providing a silicon-based substrate; depositing an oxide layer on the silicon-based substrate; depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate; producing an electronic component based on the polycrystalline silicon layer; and mounting a glass- or silicon-based lid on the crystalline silicon layer.

## Claims

### Claim 1

A method of producing a semiconductor component, the method comprising:
providing a silicon-based substrate;
depositing an oxide layer on the silicon-based substrate;
removing a ring-shaped section of the oxide layer to provide a corresponding exposed ring-shaped section on the silicon-based substrate;
depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the exposed ring-shaped section on the silicon-based substrate to form a ring-shaped crystalline silicon layer;
producing an electronic component based on the polycrystalline silicon layer, wherein the ring-shaped crystalline silicon layer surrounds the electronic component; and
mounting a glass- or silicon-based lid on the ring-shaped crystalline silicon layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the lid has a projection connected to the ring-shaped crystalline silicon layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the projection is ring-shaped and has spatial dimensions corresponding to spatial dimensions of the ring-shaped crystalline silicon layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the mounting of the silicon-based lid on the crystalline ring-shaped silicon layer comprises wafer bonding.

### Claim 5 (depends on 4)

The method of claim 4, wherein the wafer bonding is conducted at a temperature exceeding 500° C.

### Claim 6 (depends on 1)

The method of claim 1, wherein the mounting of the glass-based lid on the ring-shaped crystalline silicon layer comprises anodic bonding.

### Claim 7 (depends on 1)

The method of claim 1, wherein the depositing of the polycrystalline silicon layer and of the ring-shaped crystalline silicon layer comprises growth from a gas phase using silane.

### Claim 8 (depends on 1)

The method of claim 1, wherein the producing of an electronic component comprises producing of a MEMS component.

### Claim 9 (depends on 8)

The method of claim 8, wherein the MEMS component includes one or more selected from the group consisting of an acceleration sensor, a pressure sensor, a vibration sensor, a gyroscope, and a time-recording component.

### Claim 10

A method of producing a semiconductor component, the method comprising:
providing a silicon-based substrate;
depositing an oxide layer on the silicon-based substrate;
removing a ring-shaped section of the oxide layer to provide a corresponding exposed ring-shaped section on the silicon-based substrate;
depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the exposed ring-shaped section on the silicon-based substrate to form a ring-shaped crystalline silicon layer;
producing an electronic component based on the polycrystalline silicon layer, wherein the ring-shaped crystalline silicon layer surrounds the electronic component;
providing a glass- or silicon-based lid having a ring-shaped projection having spatial dimensions corresponding to spatial dimensions of the ring-shaped crystalline silicon layer; and
mounting the glass- or silicon-based lid on the ring-shaped crystalline silicon layer such that the ring-shaped projection of the lid is connected to the ring-shaped crystalline layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein a lateral diameter of the ring-shaped projection is smaller than a lateral diameter of the ring-shaped crystalline silicon layer.

### Claim 12 (depends on 10)

The method of claim 10, wherein the mounting of the silicon-based lid on the crystalline ring-shaped silicon layer comprises wafer bonding.

### Claim 13 (depends on 10)

The method of claim 10, wherein the mounting of the glass-based lid on the ring-shaped crystalline silicon layer comprises anodic bonding.

### Claim 14 (depends on 10)

The method of claim 10, wherein the producing of an electronic component comprises producing of a MEMS component.

### Claim 15

A method of producing a semiconductor component, the method comprising:
providing a silicon-based substrate;
depositing an oxide layer on the silicon-based substrate;
removing a ring-shaped section of the oxide layer to provide a corresponding exposed ring-shaped section on the silicon-based substrate;
depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the exposed ring-shaped section on the silicon-based substrate to form a ring-shaped crystalline silicon layer;
producing a MEMS component based on the polycrystalline silicon layer, wherein the ring-shaped crystalline silicon layer surrounds the MEMS component; and
mounting a glass- or silicon-based lid on the ring-shaped crystalline silicon layer.

### Claim 16 (depends on 15)

The method of claim 15, wherein the MEMS component includes one or more selected from the group consisting of an acceleration sensor, a pressure sensor, a vibration sensor, a gyroscope, and a time-recording component.

### Claim 17 (depends on 15)

The method of claim 15, wherein the lid has a projection connected to the ring-shaped crystalline silicon layer.

### Claim 18 (depends on 17)

The method of claim 17, wherein the projection is ring-shaped and has spatial dimensions corresponding to spatial dimensions of the ring-shaped crystalline silicon layer.

### Claim 19 (depends on 15)

The method of claim 15, wherein the mounting of the silicon-based lid on the crystalline ring-shaped silicon layer comprises wafer bonding.

### Claim 20 (depends on 15)

The method of claim 15, wherein the mounting of the glass-based lid on the ring-shaped crystalline silicon layer comprises anodic bonding.