Half-bridge circuit including integrated level shifter transistor

A semiconductor device, comprising:

• a semiconductor body;
• a vertical transistor arranged in a first device region of the semiconductor body and comprising a drain region arranged at a second surface of the semiconductor body opposite a first surface of the semiconductor body, a plurality of drift regions of a first doping type and a plurality of compensation regions of a second doping type complementary to the first doping type, the drift regions and the compensation regions being arranged alternately in a lateral direction of the semiconductor body;
• and
• a lateral transistor arranged in a second device region of the semiconductor body, the second device region comprising a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type, the lateral transistor comprising device regions arranged in the first semiconductor region,
• wherein the well-like structure adjoins the drain region.