# US 12,002,802 B2 · Capacitor and method for forming the same

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- Number: US 12,002,802 B2
- Document ID: US12002802B2
- Status: Granted
- Kind: B2
- Application number: 18/158,452
- Filed: 2023-01-23
- Published: 2023-05-25
- Granted: 2024-06-04
- Earliest claimed: 2021-04-08
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Meng-Han Lin; Meng-Sheng Chang
- Web page: https://patentgrep.com/patent/US12002802B2

## CPC

- H10D 84/212: {of only capacitors}
- H10D 89/911: {using passive elements as protective elements}
- H10D 1/68: Capacitors having no potential barriers
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 84/01: Manufacture or treatment
- H10D 84/0158: {the components including FinFETs}
- H10D 84/0193: {the components including FinFETs}
- H10D 86/01: Manufacture or treatment
- H10D 89/213: {in field-effect devices}
- H10W 20/496: {Capacitor integral with wiring layers}
- H10D 84/813: {Combinations of field-effect devices and capacitor only}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An integrated circuit (IC) structure includes a semiconductor substrate, a shallow trench isolation (STI) region, and a capacitor. The STI region is embedded in the semiconductor substrate. The capacitor includes first and second conductive stacks. The first conductive stack includes a first dummy gate strip disposed entirely within the STI region and a plurality of first metal dummy gate contacts landing on the first metal capacitor strip. The second conductive stack includes a second dummy gate strip disposed entirely within the STI region and extending in parallel with the first dummy gate strip, and a plurality of second dummy gate contacts landing on the second dummy gate strip, wherein the first conductive stack is electrically isolated from the second conductive stack.

## Claims

### Claim 1

An integrated circuit (IC) structure, comprising:
a semiconductor substrate;
a shallow trench isolation (STI) region in the semiconductor substrate; and
a capacitor comprising:
a first conductive stack comprising a first dummy gate strip disposed entirely within the STI region, and a plurality of first dummy gate contacts landing on the first dummy gate strip; and
a second conductive stack comprising a second dummy gate strip disposed entirely within the STI region and extending in parallel with the first dummy gate strip, and a plurality of second dummy gate contacts landing on the second dummy gate strip, wherein the first conductive stack is electrically isolated from the second conductive stack.

### Claim 2 (depends on 1)

The IC structure of claim 1, wherein each of the first and second dummy gate strips comprises a high-k dielectric layer and a metal structure over the high-k dielectric layer.

### Claim 3 (depends on 1)

The IC structure of claim 1, wherein the capacitor further comprises:
a first metal line extending above and in parallel with the first dummy gate strip; and
a second metal line extending above and in parallel with the second dummy gate strip at a same level height as the first metal line.

### Claim 4 (depends on 3)

The IC structure of claim 3, wherein the capacitor further comprises:
a plurality of first metal vias landing on the first metal line; and
a plurality of second metal vias landing on the second metal line.

### Claim 5 (depends on 3)

The IC structure of claim 3, wherein the first metal line overlaps the first dummy gate strip and the second metal line overlaps the second dummy gate strip.

### Claim 6 (depends on 1)

The IC structure of claim 1, further comprising a spacer laterally surrounding each of the first and second dummy gate strips.

### Claim 7 (depends on 6)

The IC structure of claim 6, further comprising a liner extending along a top surface of the STI region and a sidewall of the spacer.

### Claim 8 (depends on 1)

The IC structure of claim 1, wherein one of the plurality of first dummy gate contacts is aligned with one of the plurality of second dummy gate contacts in a direction perpendicular to a lengthwise direction of the first dummy gate strip.

### Claim 9 (depends on 1)

The IC structure of claim 1, further comprising a third dummy gate strip disposed entirely within the STI region and extending in parallel with the first dummy gate strip, wherein the second dummy gate strip is laterally between the first and third dummy gate strips.

### Claim 10 (depends on 9)

The IC structure of claim 9, further comprising a plurality of third dummy gate contacts landing on the third dummy gate strip.

### Claim 11

An integrated circuit (IC) structure, comprising:
a semiconductor substrate;
a shallow trench isolation (STI) structure embedded in the semiconductor substrate to define an active region in the semiconductor substrate;
a capacitor comprising a plurality of conductive stacks extending upwardly from the STI structure and arranged in a first row, wherein each of the plurality of conductive stacks comprises a dummy gate strip extending along a top surface of the STI structure; and
a plurality of metal gate strips arranged in a second row over the active region, wherein the dummy gate strips having a same material composition as the plurality of metal gate strips of the plurality of conductive stacks.

### Claim 12 (depends on 11)

The IC structure of claim 11, wherein each of the plurality of metal gate strips comprises a first metal layer, and each of the dummy gate strips of the plurality of conductive stacks comprises a second metal layer formed of a same material as the first metal layer.

### Claim 13 (depends on 11)

The IC structure of claim 11, wherein each of the plurality of metal gate strips comprise a first high-k dielectric layer, and each of the dummy gate strips of the plurality of conductive stacks comprises a second high-k gate dielectric layer formed of a same material as the first high-k dielectric layer.

### Claim 14 (depends on 11)

The IC structure of claim 11, further comprising:
a plurality of first dummy gate contacts landing on a first one of the dummy gate strips of the plurality of conductive stacks; and
a plurality of second dummy gate contacts landing on a second one of the dummy gate strips of the plurality of conductive stacks.

### Claim 15 (depends on 11)

The IC structure of claim 11, further comprising:
a pair of capacitor lines extending above a first one and a second one of the dummy gate strips of the plurality of conductive stacks;
a plurality of first capacitor vias landing on the first one of the dummy gate strips; and
a plurality of second capacitor vias landing on the second one of the dummy gate strips.

### Claim 16 (depends on 11)

The IC structure of claim 11, wherein the plurality of metal gate strips are arranged at a first gate pitch, and the dummy gate strips of the plurality of conductive stacks are arranged at a second gate pitch substantially equal to the first gate pitch.

### Claim 17 (depends on 11)

The IC structure of claim 11, wherein each of the plurality of metal gate strips has a width substantially equal to a width of each of the dummy gate strips of the plurality of conductive stacks.

### Claim 18

An integrated circuit (IC) structure, comprising:
a substrate having an active region;
a dielectric material embedded in the substrate and laterally surrounding the active region; and
a gate strip over the active region;
source/drain regions in the active region and at opposite sides of the gate strip;
a first conductive stack comprising a first metal strip over the dielectric material, and a plurality of first contacts landing on the first metal strip; and
a second conductive stack comprising a second metal strip over the dielectric material and extending in parallel with the first metal strip, and a plurality of second contacts landing on the second metal strip, wherein the first and second conductive stacks are electrically isolated from each other and are of a capacitor, and the first and second conductive stacks have a same material composition as the gate strip.

### Claim 19 (depends on 18)

The IC structure of claim 18, wherein the first and second conductive stacks are in contact with the dielectric material.

### Claim 20 (depends on 18)

The IC structure of claim 18, wherein the gate strip and the first and second metal strip are on a same level height.