# US 12,002,794 B2 · Semiconductor device

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- Number: US 12,002,794 B2
- Document ID: US12002794B2
- Status: Granted
- Kind: B2
- Application number: 17/441,950
- Filed: 2020-04-21
- Published: 2022-05-26
- Granted: 2024-06-04
- Earliest claimed: 2019-04-24
- Assignees: Rohm Co., Ltd.
- Applicants: Rohm Co., Ltd.
- Inventors: Takumi Kanda
- Web page: https://patentgrep.com/patent/US12002794B2

## CPC

- H10W 90/00: Package configurations
- H02M 7/48: using discharge tubes with control electrode or semiconductor devices with control electrode
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/60: Securing means for detachable heating or cooling arrangements, e.g. clamps
- H10W 42/80: protecting against overcurrent or overload, e.g. fuses or shunts (integrated devices comprising arrangements for electrical protection H10D89/60)
- H10W 70/468: {Circuit boards}
- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H10W 72/00: Interconnections or connectors in packages
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 90/811: {Multiple chips on leadframes}
- H10W 70/421: {Shapes or dispositions}
- H10W 72/07552: {changes in structures or sizes}
- H10W 72/07554: {changes in dispositions}
- H10W 72/527: {Multiple bond wires having different sizes}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/547: {Dispositions of multiple bond wires}
- H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)

## Abstract

A semiconductor device includes a support member, a first switching element, a second switching element, a first passive element, a second passive element, and an electrical conductor. The support member includes a plurality of wiring parts, and the plurality of wiring parts include a first wiring section and a second wiring section spaced apart from each other in a first direction perpendicular to the thickness direction of the support member. The first switching element is electrically connected to the first wiring section. The second switching element is electrically connected to the first switching element and the second wiring section. The first passive element has a first electrode and a second electrode, and the first electrode is bonded to the first wiring section. The second passive element has a third electrode and a fourth electrode, and the fourth electrode is bonded to the second wiring section. The electrical conductor connects the second electrode and the third electrode to each other. At least one of the first passive element and the second passive element is a capacitor.

## Claims

### Claim 1

A semiconductor device comprising:
a support member provided with a plurality of wiring parts including a first wiring section and a second wiring section spaced apart from each other in a first direction perpendicular to a thickness direction;
a first switching element electrically connected to the first wiring section;
a second switching element electrically connected to the first switching element and the second wiring section;
a first passive element having a first electrode and a second electrode, the first electrode being bonded to the first wiring section;
a second passive element having a third electrode and a fourth electrode, the fourth electrode being bonded to the second wiring section; and
an electrical conductor connecting the second electrode and the third electrode,
wherein at least one of the first passive element and the second passive element is a capacitor, and
a Young's modulus of the electrical conductor is smaller than that of the first wiring section and that of the second wiring section.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein both the first passive element and the second passive element are capacitors.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein either the first passive element or the second passive element is a resistor.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2, wherein the first electrode and the second electrode are spaced apart from each other in the thickness direction,
the third electrode and the fourth electrode are spaced apart from each other in the thickness direction, and
the first passive element and the second passive element are spaced apart from each other in the first direction.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein the electrical conductor is spaced apart from the plurality of wiring parts in the thickness direction and supported by the first passive element and the second passive element.

### Claim 6 (depends on 2)

The semiconductor device according to claim 2, wherein the first electrode and the second electrode are spaced apart from each other in the first direction,
the third electrode and the fourth electrode are spaced apart from each other in the first direction, and
the electrical conductor, the second electrode, and the third electrode are located between the first wiring section and the second wiring section as viewed along the thickness direction.

### Claim 7 (depends on 5)

The semiconductor device according to claim 5, further comprising an electrical insulator that is thermally conductive and located between the first passive element and the second passive element,
wherein the electrical insulator is in contact with the electrical conductor and at least one of the first wiring section and the second wiring section.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, further comprising an electrical insulator that is thermally conductive and located between the first wiring section and the second wiring section,
wherein the electrical insulator is in contact with the electrical conductor and at least one of the first wiring section and the second wiring section.

### Claim 9 (depends on 7)

The semiconductor device according to claim 7, wherein the support member includes an insulating substrate to which the plurality of wiring parts are fixed, and
the electrical insulator is in contact with the insulating substrate.

### Claim 10 (depends on 9)

The semiconductor device according to claim 9, further comprising a sealing resin, wherein
the sealing resin covers the insulating substrate, the plurality of wiring parts, the first switching element, the second switching element, the first passive element, the second passive element and the electrical conductor,
the support member is located opposite to the plurality of wiring parts with respect to the insulating substrate in the thickness direction, the support member including a heat dissipator fixed to the insulating substrate,
the heat dissipator is exposed from the sealing resin, and
as viewed along the thickness direction, the heat dissipator overlaps with the plurality of wiring parts and located inward of a peripheral edge of the insulating substrate.

### Claim 11 (depends on 1)

The semiconductor device according to claim 1, wherein the plurality of wiring parts include a third wiring section,
the third wiring section is spaced apart from the first wiring section and the second wiring section in a second direction perpendicular to the thickness direction and the first direction,
the second switching element is bonded to the third wiring section, and
the first switching element is bonded to the first wiring section and electrically connected to the third wiring section.

### Claim 12 (depends on 1)

The semiconductor device according to claim 1, further comprising a first diode and a second diode, wherein
the first diode is connected in parallel with the first switching element to the first wiring section, and
the second diode is connected in parallel with the second switching element to the second wiring section.

### Claim 13

A semiconductor device comprising:
a support member that includes a plurality of wiring parts including a first wiring section and a second wiring section spaced apart from each other in a first direction perpendicular to a thickness direction;
a first switching element electrically connected to the first wiring section;
a second switching element electrically connected to the first switching element and the second wiring section; and
a snubber capacitor located between the first wiring section and the second wiring section,
wherein the snubber capacitor has a first conducting portion and a second conducting portion spaced apart from each other, and an insulating portion including a portion sandwiched between the first conducting portion and the second conducting portion,
the first conducting portion is connected to the first wiring section and extends from the first wiring section in the first direction, and
the second conducting portion is connected to the second wiring section and extends from the second wiring section in the first direction.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13, wherein the support member includes an insulating substrate to which the plurality of wiring parts are fixed, and
the insulating portion is thermally conductive and in contact with the insulating substrate.

### Claim 15 (depends on 14)

The semiconductor device according to claim 14, wherein the first conducting portion and the second conducting portion are spaced apart from each other in a second direction perpendicular to the thickness direction and the first direction.

### Claim 16 (depends on 14)

The semiconductor device according to claim 14, wherein the first conducting portion and the second conducting portion are spaced apart from each other in the thickness direction.

### Claim 17 (depends on 14)

The semiconductor device according to claim 14, further comprising a sealing resin, wherein
the sealing resin covers the insulating substrate, the plurality of wiring parts, the first switching element, the second switching element and the snubber capacitor,
the support member is located opposite to the plurality of wiring parts the with respect to the insulating substrate in the thickness direction, the support member including a heat dissipator fixed to the insulating substrate,
the heat dissipator is exposed from the sealing resin, and
as viewed along the thickness direction, the heat dissipator overlaps with the plurality of wiring parts and located inward of a peripheral edge of the insulating substrate.