# US 12,002,791 B2 · Light emitting device, display panel, and display panel manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,791 B2 - Document ID: US12002791B2 - Status: Granted - Kind: B2 - Application number: 17/435,153 - Filed: 2021-06-08 - Published: 2023-06-29 - Granted: 2024-06-04 - Earliest claimed: 2021-05-31 - Assignees: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. - Applicants: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. - Inventors: Kunpeng He - Web page: https://patentgrep.com/patent/US12002791B2 ## CPC - H10H 20/80: Constructional details - H10W 90/00: Package configurations - H10H 20/831: characterised by their shape - H10H 20/832: characterised by their material - H10H 20/833: Transparent materials - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 20/032: {of electrodes} - H10H 20/0364: {of interconnections} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting device, a display panel, and a display panel manufacturing method are provided in the embodiments of the present disclosure. The light emitting device includes a first electrode, and second electrode arranged around the first electrode, and the second electrode is symmetrically disposed with respect to the first electrode. A distance from each of points on the second electrode to a center point of the first electrode is equal. When the light emitting device is transferring, any point on the second electrode abuts the corresponding electrode, thereby reducing the difficulty in a mass transfer process of the light-emitting device. ## Claims ### Claim 1 A light emitting device, comprising: a first substrate; a N-type contact layer disposed on the first substrate; an active layer disposed on the N-type contact layer; and a P-type contact layer disposed on the active layer; wherein a first electrode and a second electrode arranged around the first electrode are disposed on the P-type contact layer, in response to the first electrode being an N-type electrode and the second electrode being a P-type electrode, the first electrode is connected to the N-type contact layer through a via hole, or in response to the first electrode being a P-type electrode and the second electrode being an N-type electrode, the second electrode is connected to the N-type contact layer through a via hole; and wherein a first encapsulation layer is disposed at a side of the second electrode away from the first electrode, and the first encapsulation layer is arranged around the second electrode. ### Claim 2 (depends on 1) The light emitting device according to claim 1, wherein a PN insulating layer is disposed between the first electrode and the second electrode. ### Claim 3 (depends on 2) The light emitting device according to claim 2, wherein the second electrode is arranged around the first electrode, and a distance from each of points on a circumferential line of the second electrode to a center point of the first electrode is equal. ### Claim 4 (depends on 3) The light emitting device according to claim 3, wherein a width of the first electrode is greater than or equal to a width of the second electrode in a same cross section. ### Claim 5 (depends on 2) The light emitting device according to claim 2, wherein the first electrode has a cylindrical structure, and the second electrode has a circular ring structure. ### Claim 6 (depends on 2) The light emitting device according to claim 2, wherein a preparation material of the P-type contact layer comprises gallium nitride. ### Claim 7 (depends on 2) The light emitting device according to claim 2, wherein a preparation material of the N-type contact layer comprises gallium nitride. ### Claim 8 A display panel, comprising: a second substrate; a thin film transistor (TFT) device disposed on the second substrate, wherein the TFT device comprises a source electrode and a ground terminal; and a light emitting device disposed on the second substrate, wherein the light emitting device comprises a first electrode, and a second electrode arranged around the first electrode; wherein in response to the first electrode being a P-type electrode, the first electrode is arranged in abutment with the source electrode, and the second electrode is arranged in abutment with the ground terminal, or in response to the first electrode being an N-type electrode, the first electrode is arranged in abutment with the ground terminal, and the second electrode is arranged in abutment with the source electrode; and wherein a first encapsulation layer is disposed at a side of the second electrode away from the first electrode, and the first encapsulation layer is arranged around the second electrode. ### Claim 9 (depends on 8) The display panel according to claim 8, wherein either the first electrode is the N-type electrode, and the second electrode is the P-type electrode, or the first electrode is the P-type electrode, and the second electrode is the N-type electrode. ### Claim 10 (depends on 9) The display panel according to claim 9, wherein the second electrode is arranged around the first electrode, and a distance from each of points on a circumferential line of the second electrode to a center point of the first electrode is equal. ### Claim 11 (depends on 10) The display panel according to claim 10, wherein a width of the first electrode is greater than or equal to a width of the second electrode. ### Claim 12 (depends on 8) The display panel according to claim 8, wherein the first electrode is the N-type electrode, the first electrode is arranged in abutment with the ground terminal, and the second electrode is arranged in abutment with the source electrode. ### Claim 13 (depends on 8) The display panel according to claim 8, wherein the second electrode is the N-type electrode, the second electrode is arranged in abutment with the ground terminal, and the first electrode is arranged in abutment with the source electrode. ### Claim 14 (depends on 8) The display panel according to claim 8, wherein a black matrix layer is disposed above the TFT device. ### Claim 15 (depends on 14) The display panel according to claim 14, wherein a second encapsulation layer is disposed above the black matrix layer and the light emitting device. ### Claim 16 (depends on 8) The display panel according to claim 8, wherein the light emitting device further comprises: a first substrate; a N-type contact layer disposed on the first substrate; an active layer disposed on the N-type contact layer; and a P-type contact layer disposed on the active layer; wherein the first electrode and the second electrode are disposed on the P-type contact layer; and wherein the first electrode is an N-type electrode and the second electrode is a P-type electrode, the first electrode is connected to the N-type contact layer through a via hole; or, the first electrode is a P-type electrode and the second electrode is an N-type electrode, and the second electrode is connected to the N-type contact layer through a via hole. ### Claim 17 (depends on 8) The display panel according to claim 8, wherein the first electrode has a cylindrical structure, and the second electrode has a circular ring structure; and wherein a circumferential line of the second electrode is in a circular shape. ### Claim 18 A display panel manufacturing method, comprising steps of: providing a second substrate; forming a thin film transistor (TFT) device on the second substrate; providing a light emitting device, wherein the light emitting device comprises a first electrode, and a second electrode arranged around the first electrode, wherein the second electrode is symmetrically disposed with respect to the first electrode; and wherein a first encapsulation layer is disposed at a side of the second electrode away from the first electrode, and the first encapsulation layer is arranged around the second electrode; and transferring the light emitting device to the second substrate, such that a P-type electrode abuts a source electrode, and an N-type electrode abuts a ground terminal. ### Claim 19 (depends on 18) The display panel manufacturing method according to claim 18, wherein the transferring the light emitting device to the second substrate further comprises a step of: abutting and aligning the second electrode and the ground terminal in response to the first electrode of the light emitting device being the P-type electrode and the second electrode being the N-type electrode. ### Claim 20 (depends on 18) The display panel manufacturing method according to claim 18, wherein the transferring the light emitting device to the second substrate further comprises a step of: abutting and aligning the second electrode and the source electrode in response to the first electrode of the light emitting device being the N-type electrode and the second electrode being the P-type electrode.