# US 12,002,777 B2 · Semiconductor device with bonded substrates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,777 B2 - Document ID: US12002777B2 - Status: Granted - Kind: B2 - Application number: 17/461,550 - Filed: 2021-08-30 - Published: 2022-09-22 - Granted: 2024-06-04 - Earliest claimed: 2021-03-16 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Kotaro Fujii; Shinya Watanabe - Web page: https://patentgrep.com/patent/US12002777B2 ## CPC - H10W 90/00: Package configurations - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10W 80/00: Direct bonding of chips, wafers or substrates - H10W 72/019: {of bond pads} - H10W 72/01931: {using blanket deposition} - H10W 72/01953: {by etching} - H10W 72/07236: {Soldering or alloying} - H10W 72/921: {Structures or relative sizes of bond pads} - H10W 72/923: {Bond pads having multiple stacked layers} - H10W 72/9232: {with additional elements interposed between layers} - H10W 72/931: {Shapes of bond pads} - H10W 72/934: {Cross-sectional shape, i.e. in side view} - H10W 72/941: {Dispositions of bond pads} - H10W 72/951: {Materials of bond pads} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 80/312: {characterised by the direct bonding of electrically conductive pads} - H10W 80/327: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers} - H10W 80/732: {having shape changed during the connecting} - H10W 90/792: {between multiple chips} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10B: ELECTRONIC MEMORY DEVICES ## Abstract According to one or more embodiments, a semiconductor device includes a first substrate and a second substrate. The first substrate includes a first metal layer and a first insulating layer. The first insulating layer surrounds the first metal layer. The second substrate includes a second metal layer, a second insulating layer, and a first conducive body. The second metal layer is in contact with the first metal layer. The second insulating layer surrounds the second metal layer and is in contact with the first insulating layer. A part of the first conductive body is in the second metal layer and extends in a first direction toward the first metal layer. ## Claims ### Claim 1 A semiconductor device, comprising: a first chip including a first insulating layer; a second chip bonded to the first chip and including a second insulating layer contacting the first insulating layer at a sticking interface of the first and second chips; a metal layer at the sticking interface and including a first portion surrounded by the first insulating layer and a second portion surrounded by the second insulating layer; a first conductive body extending in a first direction from the second chip toward the first chip, the first conductive body including a portion extending into the second portion of the metal layer; and a conductive film including a first element, the conductive film being between the first conductive body and the second portion of the metal layer and also between the second insulating layer and the second portion of the metal layer, wherein the first element is segregated to the sticking interface in the metal layer. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the distance between the first conductive body and the first portion of the metal layer in the first direction is equal to or less than one half of the maximum thickness of the second portion of the metal layer in the first direction. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the distance between the first conductive body and the first portion of the metal layer in the first direction is shorter than the distance from the sticking interface to the first conductive body in a second direction perpendicular to the first direction. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the metal layer comprises copper. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the first conductive body comprises tungsten. ### Claim 6 (depends on 1) The semiconductor device according to claim 1 wherein the conductive film includes at least one metallic element selected from among a group consisting of titanium, tantalum, manganese, and cobalt. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the first conductive body is separated from the first portion of the metal layer in the first direction. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the first conductive body extends into the first portion of the metal layer. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, further comprising: a second conductive body that is in the first portion of the metal layer and extends in the first direction towards the second portion of the metal layer. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, further comprising: a second conductive body that is in the second portion of the metal layer and extends in the first direction towards the first portion of the metal layer, wherein the second conductive body is spaced from the first conductive body in a second direction perpendicular to the first direction. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, wherein the first chip includes a memory cell array, and the second chip includes a control circuit configured to control the memory cell array. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the metal layer is electrically connected to the memory cell array and the control circuit. ### Claim 13 (depends on 1) The semiconductor device according to claim 1, wherein the first element is titanium. ### Claim 14 A semiconductor device, comprising: a first substrate having a first side and including: a first metal layer on the first side; and a first insulating layer surrounding the first metal layer in a plane parallel to the first side; and a second substrate having a second side bonded to the first side of the first substrate, the second substrate including: a second metal layer on the second side and in contact with the first metal layer; a second insulating layer surrounding the second metal layer in a plane parallel to the second side and in contact with the first insulating layer; and a first conductive body in the second insulating layer and extending in a first direction into the second metal layer from the second insulating layer towards the first metal layer, wherein the second substrate further includes a second conductive body in the second insulating layer and extending in the first direction into the second metal layer from the second insulating layer towards the first metal layer, the first and second conductive bodies being spaced from each other in a second direction perpendicular to the first direction. ### Claim 15 (depends on 14) The semiconductor device according to claim 14, wherein the first conductive body extends in the first direction through the second metal layer into the first metal layer. ### Claim 16 (depends on 14) The semiconductor device according to claim 14, wherein the first substrate further includes a third conductive body in the first insulating layer that extends into the first metal layer from the first insulating layer towards the second metal layer. ### Claim 17 A semiconductor device, comprising: a first substrate with a first side, the first substrate including: a first metal layer on the first side, and a first insulating layer on the first side that surrounds the first metal layer; and a second substrate with a second side, the second substrate including: a second metal layer on the second side and contacting the first metal layer, a second insulating layer on the second side that surrounds the second metal layer and contacts the first insulating layer, and a first conductive body in the second substrate below the second metal layer and including a part that extends into the second metal layer towards the first metal layer in a first direction, wherein the distance between the first conductive body and the first metal layer in the first direction is equal to or less than one half of the maximum thickness of the second metal layer in the first direction. ### Claim 18 (depends on 17) The semiconductor device according to claim 17, wherein the second substrate further comprises a conductive film that is between the first conductive body and the second metal layer and also between the first conductive body and the second insulating layer. ### Claim 19 (depends on 18) The semiconductor device according to claim 18, wherein the conductive film includes at least one metallic element selected from among a group consisting of titanium, tantalum, manganese, and cobalt. ### Claim 20 (depends on 17) The semiconductor device according to claim 17, wherein the second substrate further includes a conductive layer, the first conductive body is between the conductive layer and the second metal layer, and the conductive layer is electrically connected to the first conductive body.