# US 12,002,760 B2 · Composite component and method for manufacturing the same

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- Number: US 12,002,760 B2
- Document ID: US12002760B2
- Status: Granted
- Kind: B2
- Application number: 17/490,424
- Filed: 2021-09-30
- Published: 2022-01-20
- Granted: 2024-06-04
- Earliest claimed: 2019-06-25
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Tatsuya Funaki; Shunsuke Abe
- Web page: https://patentgrep.com/patent/US12002760B2

## CPC

- H10W 70/611: {for connecting multiple chips together}
- H10W 70/685: comprising multiple insulating layers
- H05K 1/02: Details
- H05K 1/18: structurally associated with non-printed electric components (H05K1/16 takes precedence)
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 70/092: {Adapting interconnections, e.g. making engineering changes, repairing}
- H10W 70/095: {of vias therein}
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/635: {Through-vias}
- H10W 70/641: {Adaptable interconnections, e.g. fuses or antifuses}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/698: Semiconductor materials that are electrically insulating, e.g. undoped silicon
- H10W 74/016: {using moulds}
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 74/473: {containing a filler}
- H10W 90/00: Package configurations
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

A composite component that includes an interposer structure and an electronic component. The interposer structure includes a Si base layer having a first main surface and a second main surface facing each other, a rewiring layer on the first main surface, a through Si via electrically connected to the rewiring layer and penetrating the Si base layer, an interposer electrode facing the second main surface, and an adhesive layer. The electronic component has a surface and a component electrode on the surface and connected to the through Si via, and is located between the interposer electrode and the Si base layer such that the component electrode and the surface are adhered to the second main surface of the Si base layer with the adhesive layer interposed therebetween. The through Si via extends from the second main surface, penetrates the adhesive layer, and is electrically connected to the component electrode.

## Claims

### Claim 1

A composite component comprising:
an interposer structure that includes:
a Si base layer having a first main surface and a second main surface facing each other,
a rewiring layer on the first main surface,
a through Si via electrically connected to the rewiring layer and penetrating the Si base layer,
an interposer electrode facing the second main surface, and
an adhesive layer; and
an electronic component having a surface and a component electrode on the surface and connected to the through Si via, the electronic component located between the interposer electrode and the Si base layer,
wherein
the component electrode and the surface of the electronic component are adhered to the second main surface of the Si base layer with the adhesive layer interposed therebetween,
the through Si via includes a through Si via main body and an extending portion extending from the second main surface, penetrating the adhesive layer, and electrically connected to the component electrode, and
wherein, a sectional shape of the component electrode in a plane orthogonal to a stacking direction of the composite component is substantially rectangular, a sectional shape of the through Si via in the plane is substantially circular, and a diameter φ of the through Si via satisfies:
T(Si)+(T(A)−H(C))/3≤φ≤r,
wherein T(Si) is a thickness of the Si base layer, T(A) is a thickness of the adhesive layer, H(C) is a height of the component electrode, and r is a diameter of a circle inscribed in the sectional shape of the component electrode at an interface between the through Si via and the component electrode.

### Claim 2 (depends on 1)

The composite component according to claim 1, wherein only the through Si via electrically connects the component electrode to the rewiring layer.

### Claim 3 (depends on 2)

The composite component according to claim 2, wherein a length of the Si via is 3 μm to 46 μm.

### Claim 4 (depends on 1)

The composite component according to claim 1, further comprising:
a conductive pillar that electrically connects the through Si via and the component electrode, the conductive pillar including a conductive material which is the same as a conductive material of the through Si via.

### Claim 5 (depends on 1)

The composite component according to claim 1, wherein the adhesive layer has a thickness of 26 μm or less.

### Claim 6 (depends on 1)

The composite component according to claim 1, wherein two or more of the through Si vias are electrically connected to the component electrode.

### Claim 7 (depends on 1)

The composite component according to claim 1, further comprising:
a resin that seals and integrates the electronic component.

### Claim 8 (depends on 7)

The composite component according to claim 7, wherein the resin is an epoxy resin, and the resin further contains a SiO2 filler dispersed in the resin.

### Claim 9 (depends on 1)

The composite component according to claim 1, further comprising:
a first insulating film between the through Si via and the Si base layer; and
a second insulating film between the adhesive layer and the Si base layer, and
a thickness of the second insulating film is less than a thickness of the first insulating film.

### Claim 10 (depends on 1)

The composite component according to claim 1, wherein a maximum diameter of the extending portion is larger than a minimum diameter of the through Si via main body.

### Claim 11 (depends on 1)

The composite component according to claim 1, wherein a maximum diameter of the extending portion is larger than a maximum diameter of the through Si via main body.