# US 12,002,753 B2 · Electronic fuse with passive two-terminal phase change material and method of fabrication

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- Number: US 12,002,753 B2
- Document ID: US12002753B2
- Status: Granted
- Kind: B2
- Application number: 17/545,260
- Filed: 2021-12-08
- Published: 2023-06-08
- Granted: 2024-06-04
- Earliest claimed: 2021-12-08
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Kevin W. Brew; Lan Yu; Ruilong Xie; Kangguo Cheng
- Web page: https://patentgrep.com/patent/US12002753B2

## CPC

- H10W 20/493: {Fuses, i.e. interconnections changeable from conductive to non-conductive}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor structure includes a first electrode; a second electrode; a dielectric material between the first electrode and the second electrode, the dielectric material having at least one wall extending from the first electrode to the second electrode to define a void within the dielectric material and between the first electrode and the second electrode; and a layer of phase change material on the at least one wall of the dielectric material and in contact with the first electrode and the second electrode.

## Claims

### Claim 1

A semiconductor structure, comprising:
a first electrode;
a second electrode;
a dielectric material between the first electrode and the second electrode, the dielectric material having at least one wall extending from the first electrode to the second electrode; and
a layer of phase change material on and in contact with the at least one wall of the dielectric material and in contact with the first electrode and the second electrode, a material of the at least one wall configured for at least one of dewetting or agglomeration of the phase change material, the layer of phase change material defining a void within the dielectric material and between the first electrode and the second electrode, wherein the void is partially defined by a surface of at least one of the first electrode or the second electrode.

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, wherein the first electrode is one or more of titanium nitride or tantalum nitride.

### Claim 3 (depends on 1)

The semiconductor structure of claim 1, wherein the second electrode is one or more of titanium nitride or tantalum nitride.

### Claim 4 (depends on 1)

The semiconductor structure of claim 1, wherein the phase change material is Ge—Sb—Te.

### Claim 5 (depends on 1)

The semiconductor of claim 1, wherein the phase change material is in a crystalline phase at a first temperature and is configured to transition to an amorphous phase at a second temperature higher than the first temperature.

### Claim 6 (depends on 1)

The semiconductor of claim 1, wherein the dielectric material comprises at least one of a porous silicate, a carbon doped oxide, a silicon dioxide, a silicon nitride, a silicon oxynitride, SiOC, a carbon-doped silicon oxide, porous variants of any of the foregoing materials, a silsesquioxane, or a siloxane.