# US 12,002,748 B2 · Contact window structure, metal plug and forming method thereof, and semiconductor structure

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- Number: US 12,002,748 B2
- Document ID: US12002748B2
- Status: Granted
- Kind: B2
- Application number: 17/401,461
- Filed: 2021-08-13
- Published: 2022-03-24
- Granted: 2024-06-04
- Earliest claimed: 2020-09-22
- Assignees: Changxin Memory Technologies, Inc.
- Applicants: Changxin Memory Technologies, Inc.
- Inventors: Jie Liu; Ping-Heng Wu; Zhan Ying
- Web page: https://patentgrep.com/patent/US12002748B2

## CPC

- H10W 20/42: Vias, e.g. via plugs
- H10W 20/0696: {by using sacrificial placeholders, e.g. using sacrificial plugs}
- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/082: {the openings being tapered via holes}
- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10W 20/0765: {the thin functional dielectric layers being temporary, e.g. sacrificial layers}
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A contact window structure, a metal plug and a forming method thereof, a method of forming the contact window structure and a semiconductor structure are provided. In the method of forming the contact window, an annular pad is formed on a surface of a target layer. A central via, from which partial surface of the target layer is exposed, is formed in the middle part of the annular pad. A dielectric layer covering a substrate, the target layer and the annular pad is formed. The dielectric layer is etched to form an etch hole connected to the central via in the dielectric layer. The annular pad is removed along the etch hole and the central via to enlarge a size of the central via, so as to form the contact window structure by the etch hole and the central via with the enlarged size.

## Claims

### Claim 1

A method of forming a contact window structure, comprising:
providing a target layer;
forming an annular pad on a surface of the target layer, wherein a central via, from which partial surface of the target layer is exposed, is formed in a middle part of the annular pad;
forming a dielectric layer covering the target layer and the annular pad;
etching the dielectric layer to form an etch hole connected to the central via in the dielectric layer; and
removing the annular pad to form the contact window structure.

### Claim 2 (depends on 1)

The method of forming the contact window structure of claim 1, wherein forming the annular pad comprises:
forming a columnar structure on the partial surface of the target layer;
forming a pad material layer on a side wall and a top surface of the columnar structure as well as the partial surface of the target layer;
removing the pad material layer on the top surface of the columnar structure and the partial surface of the target layer by etching, to form the annular pad on a surface of the side wall of the columnar structure; and
removing the columnar structure.

### Claim 3 (depends on 1)

The method of forming the contact window structure of claim 1, wherein forming the annular pad comprises:
forming a mask material layer on the partial surface of the target layer, wherein a first via, from which the partial surface of the target layer is exposed, is formed in the mask material layer;
forming a pad material layer on a side wall and a bottom surface of the first via as well as a surface of the mask material layer; and
removing the pad material layer on the surface of the mask material layer and the bottom surface of the first via by etching, to form the annular pad on a surface of the side wall of the first via.

### Claim 4 (depends on 3)

The method of forming the contact window structure of claim 3, further comprising:
after forming the annular pad, removing the mask material layer to form the dielectric layer on the target layer and the annular pad, or
after forming the annular pad, retaining the mask material layer and forming the dielectric layer on the mask material layer.

### Claim 5 (depends on 1)

The method of forming the contact window structure of claim 1, wherein in forming the dielectric layer, the central via in the middle part of the annular pad is fully filled with the dielectric layer.

### Claim 6 (depends on 1)

The method of forming the contact window structure of claim 1, wherein in forming the dielectric layer, the central via is partially filled or not filled with the dielectric layer, and an air gap is formed in the annular pad.

### Claim 7 (depends on 1)

The method of forming the contact window structure of claim 1, further comprising:
before forming the dielectric layer, filling the central via in the middle part of the annular pad with a sacrificial layer, wherein in etching the dielectric layer to form the etch hole, an etching rate for the sacrificial layer is greater than an etching rate for the dielectric layer.

### Claim 8 (depends on 1)

The method of forming the contact window structure of claim 1, wherein a thickness of the annular pad is 3 times or more of a size of the central via.

### Claim 9 (depends on 1)

The method of forming the contact window structure of claim 1, wherein in a process of forming the contact window structure, the target layer is partially removed by etching.

### Claim 10 (depends on 1)

The method of forming the contact window structure of claim 1, further comprising:
providing a substrate, wherein the target layer is formed in the substrate, and a surface of the target layer is exposed from the substrate.

### Claim 11 (depends on 1)

A method of forming a metal plug, comprising:
forming the contact window structure using the method of claim 1; and
filling the contact window structure with metal to form the metal plug.