# US 12,002,732 B2 · Copper/ceramic assembly, insulated circuit board, method for producing copper/ceramic assembly, and method for producing insulated circuit board > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,732 B2 - Document ID: US12002732B2 - Status: Granted - Kind: B2 - Application number: 17/615,213 - Filed: 2020-06-23 - Published: 2022-07-21 - Granted: 2024-06-04 - Earliest claimed: 2019-08-21 - Assignees: Mitsubishi Materials Corporation - Applicants: Mitsubishi Materials Corporation - Inventors: Nobuyuki Terasaki - Web page: https://patentgrep.com/patent/US12002732B2 ## CPC - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W 40/47: by flowing liquids, e.g. forced water cooling - C04B 35/645: Pressure sintering - C04B 37/026: {consisting of metals or metal salts} - H05K 3/388: {by the use of a metallic or inorganic thin film adhesion layer} - H10W 40/257: {having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures (H10W40/254, H10W40/251 take precedence)} - H10W 70/02: of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - C04B 2235/656: characterised by specific heating conditions during heat treatment - C04B 2235/6562: Heating rate - C04B 2235/6567: Treatment time - C04B 2235/6581: Total pressure below 1 atmosphere, e.g. vacuum - C04B 2237/06: Oxidic interlayers - C04B 2237/12: Metallic interlayers - C04B 2237/127: The active component for bonding being a refractory metal - C04B 2237/343: Alumina or aluminates - C04B 2237/407: Copper - C04B 2237/60: Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface - C04B 2237/708: of one or more of the interlayers - H05K 1/0306: {Inorganic insulating substrates, e.g. ceramic, glass} - H05K 2201/0338: Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ## Abstract This A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of oxygen-containing ceramics, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is formed on a ceramic member side between the copper member and the ceramic member, and an active metal oxide phase composed of an oxide of one or more active metals selected from Ti, Zr, Nb, and Hf is dispersed inside a copper layer in contact with the magnesium oxide layer. ## Claims ### Claim 1 A copper/ceramic bonded body comprising: a copper member made of copper or a copper alloy; and a ceramic member made of oxygen-containing ceramics, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is formed on a ceramic member side between the copper member and the ceramic member, and an active metal oxide phase composed of an oxide of one or more active metals selected from Ti, Zr, Nb, and Hf is dispersed inside a copper layer in contact with the magnesium oxide layer. ### Claim 2 (depends on 1) The copper/ceramic bonded body according to claim 1, wherein a thickness of the magnesium oxide layer is set to be in a range of 50 nm or more and 1000 nm or less. ### Claim 3 (depends on 2) The copper/ceramic bonded body according to claim 2, wherein either one or both of Cu particles and compound particles of Cu and an active metal are dispersed inside the magnesium oxide layer. ### Claim 4 (depends on 2) The copper/ceramic bonded body according to claim 2, wherein the active metal is Ti. ### Claim 5 (depends on 1) The copper/ceramic bonded body according to claim 1, wherein either one or both of Cu particles and compound particles of Cu and an active metal are dispersed inside the magnesium oxide layer. ### Claim 6 (depends on 2) A method for producing the copper/ceramic bonded body according to claim 2, the method comprising: an active metal and Mg disposing step of disposing Mg and one or more active metals selected from Ti, Zr, Nb, and Hf between the copper member and the ceramic member; a laminating step of laminating the copper member and the ceramic member with the active metal and Mg interposed therebetween; and a bonding step of performing a heating treatment on the laminated copper member and ceramic member with the active metal and Mg interposed therebetween in a state of being pressed in a lamination direction under a vacuum atmosphere to bond the copper member and the ceramic member to each other, wherein, in the active metal and Mg disposing step, an amount of the active metal is set to be in a range of 0.4 μmol/cm2 or more and 47.0 μmol/cm2 or less, and an amount of Mg is set to be in a range of 14 μmol/cm2 or more and 180 μmol/cm2 or less, and in the bonding step, a temperature increase rate in a temperature range of 480° C. or higher and lower than 650° C. is set to be 5° C./min or higher, a holding temperature is set to be in a range of 650° C. or higher and 850° C. or lower, and a holding time at the holding temperature is set to be in a range of 10 minutes or longer and 180 minutes or shorter. ### Claim 7 (depends on 5) The copper/ceramic bonded body according to claim 5, wherein either one or both of Cu particles and compound particles of Cu and an active metal are dispersed inside the magnesium oxide layer. ### Claim 8 (depends on 5) The copper/ceramic bonded body according to claim 5, wherein an equivalent circle diameter of the Cu particles and the compound particles dispersed inside the magnesium oxide layer is set to be in a range of 10 nm or more and 100 nm or less. ### Claim 9 (depends on 5) A method for producing the copper/ceramic bonded body according to claim 5, the method comprising: an active metal and Mg disposing step of disposing Mg and one or more active metals selected from Ti, Zr, Nb, and Hf between the copper member and the ceramic member; a laminating step of laminating the copper member and the ceramic member with the active metal and Mg interposed therebetween; and a bonding step of performing a heating treatment on the laminated copper member and ceramic member with the active metal and Mg interposed therebetween in a state of being pressed in a lamination direction under a vacuum atmosphere to bond the copper member and the ceramic member to each other, wherein, in the active metal and Mg disposing step, an amount of the active metal is set to be in a range of 0.4 μmol/cm2 or more and 47.0 μmol/cm2 or less, and an amount of Mg is set to be in a range of 14 μmol/cm2 or more and 180 μmol/cm2 or less, and in the bonding step, a temperature increase rate in a temperature range of 480° C. or higher and lower than 650° C. is set to be 5° C./min or higher, a holding temperature is set to be in a range of 650° C. or higher and 850° C. or lower, and a holding time at the holding temperature is set to be in a range of 10 minutes or longer and 180 minutes or shorter. ### Claim 10 (depends on 1) The copper/ceramic bonded body according to claim 1, wherein the active metal is Ti. ### Claim 11 (depends on 1) A method for producing the copper/ceramic bonded body according to claim 1, the method comprising: an active metal and Mg disposing step of disposing Mg and one or more active metals selected from Ti, Zr, Nb, and Hf between the copper member and the ceramic member; a laminating step of laminating the copper member and the ceramic member with the active metal and Mg interposed therebetween; and a bonding step of performing a heating treatment on the laminated copper member and ceramic member with the active metal and Mg interposed therebetween in a state of being pressed in a lamination direction under a vacuum atmosphere to bond the copper member and the ceramic member to each other, wherein, in the active metal and Mg disposing step, an amount of the active metal is set to be in a range of 0.4 μmol/cm2 or more and 47.0 μmol/cm2 or less, and an amount of Mg is set to be in a range of 14 μmol/cm2 or more and 180 μmol/cm2 or less, and in the bonding step, a temperature increase rate in a temperature range of 480° C. or higher and lower than 650° C. is set to be 5° C./min or higher, a holding temperature is set to be in a range of 650° C. or higher and 850° C. or lower, and a holding time at the holding temperature is set to be in a range of 10 minutes or longer and 180 minutes or shorter. ### Claim 12 An insulating circuit substrate comprising: a copper sheet made of copper or a copper alloy; and a ceramic substrate made of oxygen-containing ceramics, wherein the copper sheet is bonded to a surface of the ceramic substrate, a magnesium oxide layer is formed on a ceramic substrate side between the ceramic substrate and the copper sheet, and an active metal oxide phase composed of an oxide of one or more active metals selected from Ti, Zr, Nb, and Hf is dispersed inside a copper layer in contact with the magnesium oxide layer. ### Claim 13 (depends on 12) The insulating circuit substrate according to claim 12, wherein a thickness of the magnesium oxide layer is set to be in a range of 50 nm or more and 1000 nm or less. ### Claim 14 (depends on 13) The insulating circuit substrate according to claim 13, wherein either one or both of Cu particles and compound particles of Cu and an active metal are dispersed inside the magnesium oxide layer. ### Claim 15 (depends on 13) The insulating circuit substrate according to claim 13, wherein the active metal is Ti. ### Claim 16 (depends on 13) A method for producing the insulating circuit substrate according to claim 13, the method comprising: an active metal and Mg disposing step of disposing Mg and one or more active metals selected from Ti, Zr, Nb, and Hf between the copper sheet and the ceramic substrate; a laminating step of laminating the copper sheet and the ceramic substrate with the active metal and Mg interposed therebetween; and a bonding step of performing a heating treatment on the laminated copper sheet and ceramic substrate with the active metal and Mg interposed therebetween in a state of being pressed in a lamination direction under a vacuum atmosphere to bond the copper sheet and the ceramic substrate to each other, wherein, in the active metal and Mg disposing step, an amount of the active metal is set to be in a range of 0.4 μmol/cm2 or more and 47.0 μmol/cm2 or less, and an amount of Mg is set to be in a range of 14 μmol/cm2 or more and 180 μmol/cm2 or less, and in the bonding step, a temperature increase rate in a temperature range of 480° C. or higher and lower than 650° C. is set to be 5° C./min or higher, a holding temperature is set to be in a range of 650° C. or higher and 850° C. or lower, and a holding time at the holding temperature is set to be in a range of 10 minutes or longer and 180 minutes or shorter. ### Claim 17 (depends on 12) The insulating circuit substrate according to claim 12, wherein either one or both of Cu particles and compound particles of Cu and an active metal are dispersed inside the magnesium oxide layer. ### Claim 18 (depends on 17) The insulating circuit substrate according to claim 17, wherein an equivalent circle diameter of the Cu particles and the compound particles dispersed inside the magnesium oxide layer is set to be in a range of 10 nm or more and 100 nm or less. ### Claim 19 (depends on 12) The insulating circuit substrate according to claim 12, wherein the active metal is Ti. ### Claim 20 (depends on 12) A method for producing the insulating circuit substrate according to claim 12, the method comprising: an active metal and Mg disposing step of disposing Mg and one or more active metals selected from Ti, Zr, Nb, and Hf between the copper sheet and the ceramic substrate; a laminating step of laminating the copper sheet and the ceramic substrate with the active metal and Mg interposed therebetween; and a bonding step of performing a heating treatment on the laminated copper sheet and ceramic substrate with the active metal and Mg interposed therebetween in a state of being pressed in a lamination direction under a vacuum atmosphere to bond the copper sheet and the ceramic substrate to each other, wherein, in the active metal and Mg disposing step, an amount of the active metal is set to be in a range of 0.4 μmol/cm2 or more and 47.0 μmol/cm2 or less, and an amount of Mg is set to be in a range of 14 μmol/cm2 or more and 180 μmol/cm2 or less, and in the bonding step, a temperature increase rate in a temperature range of 480° C. or higher and lower than 650° C. is set to be 5° C./min or higher, a holding temperature is set to be in a range of 650° C. or higher and 850° C. or lower, and a holding time at the holding temperature is set to be in a range of 10 minutes or longer and 180 minutes or shorter.