# US 12,002,730 B2 · Semiconductor module

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- Number: US 12,002,730 B2
- Document ID: US12002730B2
- Status: Granted
- Kind: B2
- Application number: 17/503,990
- Filed: 2021-10-18
- Published: 2022-06-30
- Granted: 2024-06-04
- Earliest claimed: 2020-12-28
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Ikumi Fukuda
- Web page: https://patentgrep.com/patent/US12002730B2

## CPC

- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/00: Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60)
- H10W 40/10: Arrangements for heating
- H10W 70/635: {Through-vias}
- H10W 70/68: Shapes or dispositions thereof
- H10W 72/851: {Dispositions of multiple connectors or interconnections}
- H10W 90/00: Package configurations
- H10W 70/442: {of multiple leadframes in a single chip}
- H10W 70/682: {comprising holes having chips therein}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/753: {between laterally-adjacent chips}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/811: {Multiple chips on leadframes}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A plurality of semiconductor chips, a module substrate on which the plurality of semiconductor chips are mounted, a heat sink on which the module substrate is mounted, and a filler filled between the module substrate and the heat sink are included, in which the module substrate includes a heat radiating plate, and an insulating substrate on which the plurality of semiconductor chips are mounted, the heat radiating plate has a plurality of recess portions provided on a surface facing the heat sink and at least one groove, the plurality of recess portions are provided in regions corresponding to below arrangement regions of the plurality of semiconductor chips, the at least one groove is provided in a region corresponding to below a region between at least one of the plurality of semiconductor chips and an adjacent other semiconductor chip, and the filler also is filled in the plurality of recess portions.

## Claims

### Claim 1

A semiconductor module comprising:
a plurality of semiconductor chips;
a module substrate on which the plurality of semiconductor chips are mounted;
a heat sink on which the module substrate is mounted; and
a filler filled between the module substrate and the heat sink, wherein
the module substrate includes
a heat radiating plate, and
an insulating substrate provided on the heat radiating plate and on which the plurality of semiconductor chips are mounted,
the heat radiating plate has a plurality of recess portions provided on a surface facing the heat sink and at least one groove,
the plurality of recess portions are provided in regions corresponding to below arrangement regions of the plurality of semiconductor chips,
the at least one groove is provided in a region corresponding to below a region between at least one of the plurality of semiconductor chips and an adjacent other semiconductor chip, and
the filler also is filled in the plurality of recess portions.

### Claim 2 (depends on 1)

The semiconductor module according to claim 1, wherein
a depth of the at least one groove is formed deeper than the depth of the plurality of recess portions.

### Claim 3 (depends on 1)

The semiconductor module according to claim 1, wherein
a cross-sectional shape of each of the plurality of recess portions is dome-shaped.

### Claim 4 (depends on 1)

The semiconductor module according to claim 1, wherein
the plurality of semiconductor chips are arranged in parallel and simultaneously driven, and
the at least one groove is provided below a region between the plurality of semiconductor chips of the heat radiating plate.

### Claim 5 (depends on 1)

The semiconductor module according to claim 1, wherein
the plurality of semiconductor chips has
a first chip group arranged in parallel and simultaneously driven, and
a second chip group arranged in parallel and simultaneously driven,
the first chip group and the second chip group are complementarily driven, and
the at least one groove is provided below a region between an arrangement of the first chip group and an arrangement of the second chip group of the heat radiating plate.

### Claim 6 (depends on 1)

The semiconductor module according to claim 1, wherein
the plurality of semiconductor chips include first semiconductor chips connected in parallel and arranged adjacent to one another and second semiconductor chips having smaller consumption power than that of the first semiconductor chips, and
the at least one groove is provided in a region below a region between the first semiconductor chips and the second semiconductor chips of the heat radiating plate.

### Claim 7 (depends on 1)

The semiconductor module according to claim 1, wherein
the insulating substrate includes a plurality of ceramic substrates, and
the at least one groove is provided in a region below between the plurality of ceramic substrates of the heat radiating plate.

### Claim 8 (depends on 1)

The semiconductor module according to claim 1, wherein
the plurality of semiconductor chips are arranged in a matrix, and
the at least one groove is provided below a region between the plurality of semiconductor chips of the heat radiating plate.