Methods and systems for component analysis, sorting, and sequencing based on component parameters and devices utilizing the methods and systems

A power module, comprising:

• at least one power substrate;
• a housing arranged on the at least one power substrate;
• and
• a plurality of power devices arranged on to the at least one power substrate,
• wherein each of the plurality of power devices are arranged in a sequential order based on at least one component parameter such that a variation of the at least one component parameter between adjacent pairs of the power devices in the sequential order is minimized;
• wherein the plurality of power devices are configured as an array of paralleled devices on the at least one power substrate;
• wherein the plurality of power devices comprise at least one of the following:
• a MEtal Semiconductor Field-Effect Transistor (MESFET), a Metal Oxide Field Effect Transistor (MOSFET), a Junction Field Effect Transistor (JFET), a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), a static induction transistor (SiT), a High-Electron-Mobility Transistor (HEM T), a metal insulator semiconductor FET (MISFET), a Thyristor, a Gate Turn-Off Thyristor (GTO), an Integrated Gate-Commutated Thyristor (IGCT), and/or a diode;
• and
• wherein the at least one component parameter comprises at least one of the following for each of the plurality of power devices:
• a threshold voltage, an on-state resistance, a static conduction characteristic, a dynamic switching characteristic, a drain current magnitude, a transconductance, a gate threshold voltage, a gate-source leakage current, a drain-source leakage current, a drain-source on-state resistance, a total gate charge, a gate-source charge, a gate-drain charge, an input capacitance, a reverse transfer capacitance, a gate resistance, a turn-on delay time, a turn-on rise time, a turn-off delay time, a turn-off fall time, a forward voltage, a reverse recovery time, a reverse recovery charge, a turn-on drain current, a drain-source current, a gate-source voltage, a transfer function, a drain-source voltage, a pulsed drain current, a DC body diode forward current, a pulsed body diode current, a max transient voltage, a turn-off gate voltage, a power dissipation, a virtual function temperature, a body diode thermal resistance, a thermal resistance, a body diode forward voltage, a gate-source threshold voltage, a zero-gate voltage drain current, an internal gate resistance, an output capacitance, a reverse capacitance, a stored energy, a rise time, a fall time, a turn-on energy, a turn-off energy, a total switching energy, a diode reverse recovery charge, a diode peak reverse recovery current, a resistance, a capacitance, resonant points, an inductance, transfer data, parametric data, data characterizing static losses, a device transfer curve, a transfer function, data representative of an independent scalar input versus a dependent scalar output, time domain waveforms, and/or data characterizing dynamic losses.

A power module, comprising:

• at least one power substrate;
• a housing arranged on the at least one power substrate;
• a plurality of power terminals;
• and
• a plurality of power devices arranged on to the at least one power substrate, wherein each of the plurality of power devices are arranged as an array of paralleled devices in a sequential order based on at least one component parameter;
• and
• wherein each of the plurality of power devices are arranged in the sequential order based on the at least one component parameter such that the sequential order of the plurality of power devices ensures that a variation of the at least one component parameter between adjacent pairs of the power devices in the sequential order is minimized;
• wherein the plurality of power devices comprise at least one of the following:
• a MEtal Semiconductor Field-Effect Transistor (MESFET), a Metal Oxide Field Effect Transistor (MOSFET), a Junction Field Effect Transistor (JFET), a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), a static induction transistor (SiT), a High-Electron-Mobility Transistor (HEMT), a metal insulator semiconductor FET (MISFET), a Thyristor, a Gate Turn-Off Thyristor (GTO), an Integrated Gate-Commutated Thyristor (IGCT), and/or a diode;
• and
• wherein the at least one component parameter comprises at least one of the following for each of the plurality of power devices:
• a threshold voltage, an on-state resistance, a static conduction characteristic, a dynamic switching characteristic, a drain current magnitude, a transconductance, a gate threshold voltage, a gate-source leakage current, a drain-source leakage current, a drain-source on-state resistance, a total gate charge, a gate-source charge, a gate-drain charge, an input capacitance, a reverse transfer capacitance, a gate resistance, a turn-on delay time, a turn-on rise time, a turn-off delay time, a turn-off fall time, a forward voltage, a reverse recovery time, a reverse recovery charge, a turn-on drain current, a drain-source current, a gate-source voltage, a transfer function, a drain-source voltage, a pulsed drain current, a DC body diode forward current, a pulsed body diode current, a max transient voltage, a turn-off gate voltage, a power dissipation, a virtual function temperature, a body diode thermal resistance, a thermal resistance, a body diode forward voltage, a gate-source threshold voltage, a zero-gate voltage drain current, an internal gate resistance, an output capacitance, a reverse capacitance, a stored energy, a rise time, a fall time, a turn-on energy, a turn-off energy, a total switching energy, a diode reverse recovery charge, a diode peak reverse recovery current, a resistance, a capacitance, resonant points, an inductance, transfer data parametric data, data characterizing static losses, a device transfer curve, a transfer function, data representative of an independent scalar input versus a dependent scalar output, time domain waveforms, and/or data characterizing dynamic losses.