# US 12,002,713 B2 · Method for manufacturing structure

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- Number: US 12,002,713 B2
- Document ID: US12002713B2
- Status: Granted
- Kind: B2
- Application number: 17/668,949
- Filed: 2022-02-10
- Published: 2022-05-26
- Granted: 2024-06-04
- Earliest claimed: 2019-08-16
- Assignees: FUJIFILM Corporation
- Applicants: FUJIFILM Corporation
- Inventors: Yoshinori Hotta
- Web page: https://patentgrep.com/patent/US12002713B2

## CPC

- C25D 11/20: Electrolytic after-treatment
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- C23C 18/1644: {porous substrates}
- C23C 28/00: Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C25D 11/08: containing inorganic acids
- C25D 11/24: Chemical after-treatment
- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10W 72/00: Interconnections or connectors in packages
- H10W 80/00: Direct bonding of chips, wafers or substrates
- H10W 90/00: Package configurations
- C25D 3/38: of copper
- C25D 3/48: of gold
- H10W 72/012: {of bump connectors, dummy bumps or thermal bumps}
- H10W 72/01225: {in solid form, e.g. by using a powder or by stud bumping}
- H10W 72/01235: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01238: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01251: {Changing the shapes of bumps}
- H10W 72/01253: {by etching}
- H10W 72/01255: {by using masks}
- H10W 72/01261: {Chemical or physical modification, e.g. by sintering or anodisation (patterning H10W72/01251)}
- H10W 72/016: {of strap connectors}
- H10W 72/0198: {batch processes}
- H10W 72/072: {of bump connectors}
- H10W 72/07204: {using temporary auxiliary members, e.g. sacrificial coatings}
- H10W 72/07223: {Active alignment, e.g. using optical alignment using marks or sensors}
- H10W 72/07231: {Techniques}
- H10W 72/07232: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07233: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/07254: {changes in dispositions}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07341: {Controlling the bonding environment, e.g. atmosphere composition or temperature}
- H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core}
- H10W 72/224: {Bumps having multiple side-by-side cores}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/247: {Dispositions of multiple bumps}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/722: {between stacked chips}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/732: {between stacked chips}
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Provided is a method of manufacturing a structure that can be easily bonded to a bonding target. The method of manufacturing a structure includes: a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface; a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer; an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode; a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and a filling step of filling the micropores with a conductive material, in which a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.

## Claims

### Claim 1

A method of manufacturing a structure comprising:
a conductive layer forming step of forming a conductive layer having conductivity on a part of a surface of an insulating support including at least one surface;
a valve metal layer forming step of forming a valve metal layer that covers at least a part of the conductive layer;
an anodic oxidation film forming step of forming an anodic oxidation film by performing an anodization treatment on the valve metal layer in a region on the conductive layer using the conductive layer as an electrode;
a micropore forming step of forming a plurality of micropores that extend in a thickness direction on the anodic oxidation film; and
a filling step of filling the micropores with a conductive material,
wherein a valve metal layer removing step of removing the valve metal layer having undergone the anodic oxidation film forming step is performed between the anodic oxidation film forming step and the filling step.

### Claim 2 (depends on 1)

The method of manufacturing a structure according to claim 1,
wherein the valve metal layer removing step is performed between the anodic oxidation film forming step and the micropore forming step or between the micropore forming step and the filling step.

### Claim 3 (depends on 1)

The method of manufacturing a structure according to claim 1,
wherein the micropore forming step includes a step of exposing the conductive layer by forming the plurality of micropores through the anodic oxidation film in the thickness direction.

### Claim 4 (depends on 1)

The method of manufacturing a, structure according to claim 1,
wherein in the valve metal layer forming step, the valve metal layer is formed at a temperature of the insulating support of 60° C. or lower.

### Claim 5 (depends on 1)

The method of manufacturing a structure according to claim 1, further comprising:
a protrusion step of causing a plurality of conductive paths formed of the filled conductive material to protrude from the anodic oxidation film.

### Claim 6 (depends on 5)

The method of manufacturing a structure according to claim 5,
wherein each of the plurality of conductive paths that protrude in the protrusion step has the same height as a protrusion portion that protrudes from the anodic oxidation film.

### Claim 7 (depends on 1)

The method of manufacturing a structure according to claim 1,
wherein the conductive layer is formed of the same material as the conductive material.

### Claim 8 (depends on 1)

The method of manufacturing a structure according to claim 1,
wherein the valve metal is aluminum.

### Claim 9 (depends on 1)

The method of manufacturing a structure according to claim 1,
wherein the surface of the insulating support includes an element region, and
in the conductive layer forming step, the conductive layer is formed on the element region of the surface of the insulating support.

### Claim 10 (depends on 2)

The method of manufacturing a structure according to claim 2,
wherein the micropore forming step includes a step of exposing the conductive layer by forming the plurality of micropores through the anodic oxidation film in the thickness direction.

### Claim 11 (depends on 2)

The method of manufacturing a structure according to claim 2,
wherein in the valve metal layer forming step, the valve metal layer is formed at a temperature of the insulating support of 60° C. or lower.

### Claim 12 (depends on 2)

The method of manufacturing a structure according to claim 2, further comprising:
a protrusion step of causing a plurality of conductive paths formed of the filled conductive material to protrude from the anodic oxidation film.

### Claim 13 (depends on 12)

The method of manufacturing a structure according to claim 12,
wherein each of the plurality of conductive paths that protrude in the protrusion step has the same height as a protrusion portion that protrudes from the anodic oxidation film.

### Claim 14 (depends on 2)

The method of manufacturing a structure according to claim 2,
wherein the conductive layer is formed of the same material as the conductive material.

### Claim 15 (depends on 2)

The method of manufacturing a structure according to claim 2,
wherein the valve metal is aluminum.

### Claim 16 (depends on 2)

The method of manufacturing a structure according to claim 2,
wherein the surface of the insulating support includes an element region, and
in the conductive layer forming step, the conductive layer is formed on the element region of the surface of the insulating support.

### Claim 17 (depends on 3)

The method of manufacturing a structure according to claim 3,
wherein in the valve metal layer forming step, the valve metal layer is formed at a temperature of the insulating support of 60° C. or lower.

### Claim 18 (depends on 3)

The method of manufacturing a structure according to claim 3, further comprising:
a protrusion step of causing a plurality of conductive paths formed of the filled conductive material to protrude from the anodic oxidation film.

### Claim 19 (depends on 18)

The method of manufacturing a structure according to claim 18,
wherein each of the plurality of conductive paths that protrude in the protrusion step has the same height as a protrusion portion that protrudes from the anodic oxidation film.

### Claim 20 (depends on 3)

The method of manufacturing a structure according to claim 3,
wherein the conductive layer is formed of the same material as the conductive material.