# US 12,002,706 B2 · Structure and method for enhancing robustness of ESD device

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- Number: US 12,002,706 B2
- Document ID: US12002706B2
- Status: Granted
- Kind: B2
- Application number: 18/346,589
- Filed: 2023-07-03
- Published: 2023-11-02
- Granted: 2024-06-04
- Earliest claimed: 2014-10-17
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Alexander Kalnitsky; Jen-Chou Tseng; Chia-Wei Hsu; Ming-Fu Tsai
- Web page: https://patentgrep.com/patent/US12002706B2

## CPC

- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10D 89/711: {using bipolar transistors as protective elements}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10D 10/00: Bipolar junction transistors [BJT]
- H10D 10/01: Manufacture or treatment
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.

## Claims

### Claim 1

A device comprising:
a bipolar junction transistor comprising:
an emitter region;
a collector region; and
a base region; and
isolation structures around the emitter region and the collector region in a planar view, the isolation structures comprising a partition structure between the emitter region and the collector region, the partition structure extending substantially abreast the emitter region and the collector region in the planar view, the base region disposed around the isolation structures in the planar view.

### Claim 2 (depends on 1)

The device of claim 1, wherein the bipolar junction transistor further comprises:
a substrate contact region disposed around the base region in the planar view.

### Claim 3 (depends on 2)

The device of claim 2, wherein the base region and the emitter region are connected to a first power supply node, and the collector region and the substrate contact region are connected to a second power supply node.

### Claim 4 (depends on 1)

The device of claim 1, wherein each of the emitter region and the collector region have elongated profiles that extend substantially abreast each other in a substantially parallel fashion in the planar view.

### Claim 5 (depends on 1)

The device of claim 1, wherein the partition structure is disposed closer to the emitter region than to the collector region.

### Claim 6 (depends on 1)

The device of claim 1, wherein the partition structure is disposed closer to the collector region than to the emitter region.

### Claim 7 (depends on 1)

The device of claim 1, further comprising:
a silicide block on a top surface of the partition structure.

### Claim 8 (depends on 1)

The device of claim 1, wherein the emitter region comprises a first well region and a first diffusion region in the first well region, the collector region comprises a second well region and a second diffusion region in the second well region, and one of the isolation structures extends only partially into the first well region and the second well region.

### Claim 9

A device comprising:
an emitter region;
a collector region; and
isolation structures surrounding the emitter region and the collector region in a planar view, the isolation structures comprising a first isolation region, the first isolation region having:
a first portion proximate the emitter region;
a second portion proximate the collector region; and
a third portion between the first portion and the second portion, the third portion and the first portion separated by a first partition structure, the third portion and the second portion separated by a second partition structure, each of the first portion, the second portion, and the third portion disposed between the emitter region and the collector region in the planar view.

### Claim 10 (depends on 9)

The device of claim 9, further comprising:
a base region surrounding the isolation structures in the planar view,
wherein the isolation structures further comprise a second isolation region proximate the base region and the collector region.

### Claim 11 (depends on 10)

The device of claim 10, wherein the base region and the emitter region are connected to a first power supply node, and the collector region is connected to a second power supply node.

### Claim 12 (depends on 9)

The device of claim 9, wherein the first partition structure comprises a portion of the emitter region, and the second partition structure comprises a portion of the collector region.

### Claim 13 (depends on 9)

The device of claim 9, wherein each of the first partition structure and the second partition structure extend parallel to one another in the planar view.

### Claim 14 (depends on 9)

The device of claim 9, further comprising:
an insulating material on the first portion, the second portion, and the third portion of the first isolation region.

### Claim 15 (depends on 9)

The device of claim 9, wherein the emitter region and the collector region collectively define a finger structure of a multi-finger device.

### Claim 16

A device comprising:
a first well region of a first dopant type;
a first diffusion region of a second dopant type in the first well region, the second dopant type being different from the first dopant type;
a second well region of the second dopant type;
a second diffusion region of the second dopant type in the second well region; and
isolation structures surrounding the first diffusion region and the second diffusion region in a planar view, the isolation structures comprising a first isolation region, the first isolation region having:
a first portion in the first well region;
a second portion in the second well region; and
a third portion between the first portion and the second portion in the planar view, a portion of the first well region disposed between the third portion and the first portion of the first isolation region, a portion of the second well region disposed between the third portion and the second portion of the first isolation region.

### Claim 17 (depends on 16)

The device of claim 16, further comprising:
a third shallow well of the first dopant type; and
a third diffusion region of the first dopant type in the third shallow well, the third diffusion region surrounding the isolation structures in the planar view.

### Claim 18 (depends on 17)

The device of claim 17, wherein the first diffusion region is connected to a first power supply node, the second diffusion region is connected to a second power supply node, and the third diffusion region is connected to the first power supply node.

### Claim 19 (depends on 16)

The device of claim 16, wherein the first portion, the second portion, and the third portion of the first isolation region each extend lengthwise in the same direction in the planar view.

### Claim 20 (depends on 16)

The device of claim 16, further comprising:
a silicide block on the first portion, the second portion, and the third portion of the first isolation region.