# US 12,002,676 B2 · Method for forming mask pattern, storage medium, and apparatus for processing substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,676 B2 - Document ID: US12002676B2 - Status: Granted - Kind: B2 - Application number: 17/969,878 - Filed: 2022-10-20 - Published: 2023-02-09 - Granted: 2024-06-04 - Earliest claimed: 2017-10-27 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Takashi Yamauchi; Shinichiro Kawakami; Masashi Enomoto - Web page: https://patentgrep.com/patent/US12002676B2 ## CPC - H10P 72/0458: {vertical arrangement} - H10P 76/4085: {characterised by the processes involved to create the masks} - G03F 7/26: Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) - H10P 50/287: {by chemical means} - H10P 50/73: {using masks for insulating materials} - H10P 70/20: {Cleaning during device manufacture} - H10P 72/0448: {Apparatus for applying a liquid, a resin, an ink or the like} - H10P 76/204: {of organic photoresist masks} - H10P 76/2043: {using an anti-reflective coating} - H10P 76/405: {characterised by their composition, e.g. multilayer masks} - H10P 76/4083: {characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed. ## Claims ### Claim 1 A method of forming a mask pattern on a surface of a substrate using a metal-containing resist, the method comprising: forming a resist pattern by developing the substrate, wherein an under film is formed on the substrate, a resist film is formed on a surface of the under film, and then the substrate is exposed; and removing at least a surface layer portion of the under film facing a bottom of the resist pattern to remove remaining metal components, wherein the under film is not removed in the forming step, wherein the under film has a property of being decomposed by irradiation with ultraviolet rays, and wherein in the removing step, the at least a surface layer portion of the under film is removed by irradiating the substrate with ultraviolet rays. ### Claim 2 (depends on 1) The method of claim 1, wherein in the removing step, a chemical liquid having no dissolving action on the resist film and having dissolving action on the under film is supplied to the substrate. ### Claim 3 (depends on 2) The method of claim 2, wherein an exposed region of the resist film is not developed, and the under film is an anti-reflection film whose exposed region is insoluble in the chemical liquid. ### Claim 4 (depends on 2) The method of claim 2, wherein an exposed region of the resist film is developed, and the under film is an anti-reflection film whose exposed region is insoluble in the chemical liquid. ### Claim 5 (depends on 1) The method of claim 1, wherein the under film is an organic film containing carbon. ### Claim 6 A method of forming a mask pattern on a surface of a substrate using a metal-containing resist, the method comprising: forming a resist pattern by developing the substrate, wherein an under film is formed on the substrate, a resist film is formed on a surface of the under film, and then the substrate is exposed; cross-linking the resist film by irradiating the surface of the substrate with ultraviolet rays; and removing at least a surface layer of an under film facing a bottom of the resist pattern by heating the substrate, to remove remaining metal components, wherein the under film is not developed. ### Claim 7 (depends on 1) A storage medium storing a computer program for use in a substrate processing apparatus for forming a mask pattern using a metal-containing resist on a surface of a substrate, wherein the computer program is configured to have a group of steps to execute the method of claim 1. ### Claim 8 A substrate processing apparatus, comprising: a development module configured to form a resist pattern by developing a resist film of a substrate, wherein an under film is formed on the substrate, the resist film containing a metal is formed on a surface of the under film, and then the substrate is exposed; and an under film removal module configured to remove at least a surface layer portion of the under film facing a bottom of the resist pattern to remove remaining metal components, wherein the under film has a property of being decomposed by irradiation with ultraviolet rays, and wherein the under film removal module is configured to remove the at least a surface layer portion of the under film by irradiating the substrate with ultraviolet rays. ### Claim 9 (depends on 8) The apparatus of claim 8, wherein the under film removal module is configured to supply a chemical liquid having no dissolving action on the resist film and having dissolving action on the under film to the substrate. ### Claim 10 A substrate processing apparatus, comprising: a development module configured to form a resist pattern by developing a resist film of a substrate, wherein an under film is formed on the substrate, the resist film containing a metal is formed on a surface of the under film, and then the substrate is exposed; an ultraviolet irradiation module configured to irradiate a surface of the substrate after development with ultraviolet rays to cross-link the resist film; and a heating module configured to heat the substrate after irradiation with the ultraviolet rays to remove at least a surface layer of an under film facing a bottom of the resist pattern to remove remaining metal components, wherein the under film is not developed. ### Claim 11 A method of forming a mask pattern on a surface of a substrate using a metal-containing resist, the method comprising: forming a resist pattern by developing the substrate, wherein an under film is formed on the substrate, a resist film is formed on a surface of the under film, and then the substrate is exposed; and processing at least a surface layer portion of the under film facing a bottom of the resist pattern to remove remaining metal components, wherein the under film is not removed in the forming step. ### Claim 12 (depends on 11) The method of claim 11, wherein in the processing step, a chemical liquid having no dissolving action on the resist film and having dissolving action on the under film is supplied to the substrate. ### Claim 13 (depends on 12) The method of claim 12, wherein an exposed region of the resist film is not developed, and the under film is an anti-reflection film whose exposed region is insoluble in the chemical liquid. ### Claim 14 (depends on 12) The method of claim 12, wherein an exposed region of the resist film is developed, and the under film is an anti-reflection film whose exposed region is insoluble in the chemical liquid. ### Claim 15 (depends on 11) The method of claim 11, wherein the under film has a property of being decomposed by irradiation with ultraviolet rays, and in the processing step, the at least a surface layer portion of the under film is removed by irradiating the substrate with ultraviolet rays. ### Claim 16 (depends on 15) The method of claim 15, wherein the under film is an organic film containing carbon. ### Claim 17 (depends on 11) The method of claim 11, wherein in the processing step, the surface layer portion of the under film facing the bottom of the resist pattern is heated. ### Claim 18 (depends on 11) The method of claim 11, wherein in the processing step, with a two-fluid rinse is supplied on the surface layer portion of the under film facing the bottom of the resist pattern. ### Claim 19 A substrate processing apparatus, comprising: a development module configured to form a resist pattern by developing a resist film of a substrate, wherein an under film is formed on the substrate, the resist film containing a metal is formed on a surface of the under film, and then the substrate is exposed; and an under film processing module configured to process at least a surface layer portion of the under film facing a bottom of the resist pattern to remove remaining metal components.