# US 12,002,668 B2 · Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,002,668 B2
- Document ID: US12002668B2
- Status: Granted
- Kind: B2
- Application number: 17/359,348
- Filed: 2021-06-25
- Published: 2022-12-29
- Granted: 2024-06-04
- Earliest claimed: 2021-06-25
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Srinivasa Rao Yedla; Kirankumar Neelasandra Savandaiah; Thomas Brezoczky; Hari Prasath Rajendran
- Web page: https://patentgrep.com/patent/US12002668B2

## CPC

- H01J 37/3488: {Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus}
- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- C23C 14/54: Controlling or regulating the coating process
- C23C 14/541: {Heating or cooling of the substrates}
- C23C 14/568: {Transferring the substrates through a series of coating stations (C23C14/562 takes precedence)}
- H01J 2237/2001: Maintaining constant desired temperature
- H01J 2237/332: Coating
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Aspects of the disclosure provided herein generally provide a substrate processing system that includes: a processing chamber including: a top plate having an array of process station openings disposed therethrough surrounding a central axis, a bottom plate having a first central opening, and a plurality of side walls between the top plate and the bottom plate; a plurality of heaters disposed in the top plate and the bottom plate and configured in a plurality of regions; and a system controller configured to independently control the plurality of heaters in each region.

## Claims

### Claim 1

A substrate processing system, comprising:
a processing chamber comprising:
a top plate having an array of process station openings disposed therethrough surrounding a central axis, wherein the top plate comprises a top plurality of sides;
a bottom plate having a first central opening, wherein the bottom plate comprises a bottom plurality of sides; and
a plurality of side walls between the top plate and the bottom plate;
a plurality of heaters disposed in the top plate and the bottom plate and configured in a plurality of regions, wherein the plurality of heaters comprises a plurality of upper pairs of heaters disposed in the top plurality of sides and a plurality of lower pairs of heaters disposed in the bottom plurality of sides, wherein the upper pairs of heaters are disposed between adjacent openings of the array of process station openings;
a cooling plate surrounding the first central opening having a first cooling channel disposed in the cooling plate;
at least one second cooling channel disposed in the bottom plate, wherein the at least one second cooling channel is fluidly coupled to the first cooling channel and extends towards at least one side of the bottom plurality of sides; and
a system controller configured to independently control the plurality of heaters in each region in the top plate and the bottom plate.

### Claim 2 (depends on 1)

The substrate processing system of claim 1, wherein:
the lower pairs of heaters comprise a first heater and a second heater, and
the upper pairs of heaters comprise a third heater and a fourth heater, wherein the first heater extends further inward towards the first central opening than the second heater and the fourth heater extends further inward towards the first central opening than the third heater.

### Claim 3 (depends on 1)

The substrate processing system of claim 1, further comprising at least one surface heater connected to the processing chamber.

### Claim 4 (depends on 1)

The substrate processing system of claim 1, wherein:
the top plate further has a second central opening on the central axis; and
the substrate processing system further comprises:
a central cover disposed over the second central opening and removably attached to the top plate, and
at least one surface heater connected to the central cover.

### Claim 5 (depends on 1)

The substrate processing system of claim 1, further comprising a structural support assembly coupled to an upper surface of the top plate, wherein a thermal break is disposed between the structural support assembly and the top plate.

### Claim 6 (depends on 1)

The substrate processing system of claim 1, further comprising a plurality of thermal cutoff switches controlled by the system controller and configured to control power to the heaters such that a temperature in each region is between a minimum operating temperature and a maximum operating temperature.

### Claim 7 (depends on 6)

The substrate processing system of claim 6, wherein the system controller further comprises a non-transitory computer readable medium comprising computer-executable instructions that, when executed by a processing system, cause the processing system to perform a method comprising:
(a) heating each region with a portion of the plurality of heaters in the region until a thermal cutoff switch of the plurality of thermal cutoff switches senses the maximum operating temperature,
(b) turning off the plurality of heaters in the region until the thermal cutoff switch of the plurality of thermal cutoff switches senses the minimum operating temperature; and
(c) repeating (a) and (b) at least one more time.

### Claim 8 (depends on 7)

The substrate processing system of claim 7, wherein the minimum operating temperature is about 80° C. and the maximum operating temperature is about 90° C.

### Claim 9 (depends on 1)

The substrate processing system of claim 1, wherein the plurality of heaters comprises cartridge heaters.

### Claim 10

A substrate processing system, comprising:
a processing chamber, comprising:
a top plate having an array of process station openings that surround a central axis,
a bottom plate having a central opening, and
a plurality of side walls connecting the top and bottom plates, wherein a chamber volume is defined by the top plate, the bottom plate, and the plurality of side walls; and
a first plurality of heater assemblies disposed in the top plate and the bottom plate, wherein:
each heater assembly of the first plurality of heater assemblies comprises a plurality of upper heaters and a plurality of lower heaters,
each upper heater and each lower heater of the first plurality of heater assemblies is positioned between adjacent openings of the array of process station openings and extends inward towards the central opening,
each upper heater of one heater assembly of the first plurality of heater assemblies is a same length,
the upper heaters of the remaining heater assemblies of the first plurality of heater assemblies alternate in length, and
the lower heaters of the first plurality of heater assemblies alternate in length.

### Claim 11 (depends on 10)

The substrate processing system of claim 10, further comprising a second plurality of heater assemblies disposed in the bottom plate, wherein each heater assembly of the second plurality of heater assemblies is disposed in a corner of the processing chamber.

### Claim 12 (depends on 10)

The substrate processing system of claim 10, wherein each heater assembly of the first plurality of heater assemblies comprises a heating element and a sheath.
