# US 12,002,663 B2 · Processing apparatus and method for forming semiconductor structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,663 B2 - Document ID: US12002663B2 - Status: Granted - Kind: B2 - Application number: 17/377,601 - Filed: 2021-07-16 - Published: 2023-01-19 - Granted: 2024-06-04 - Earliest claimed: 2021-07-16 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Yu-Rung Hsu; Li-Te Lin; Pinyen Lin - Web page: https://patentgrep.com/patent/US12002663B2 ## CPC - H01J 37/32743: {for introducing the material into processing chamber} - H01J 37/3211: {Antennas, e.g. particular shapes of coils} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H10P 50/242: {of Group IV materials} - H10P 50/283: {by chemical means} - H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A processing apparatus is provided. The processing apparatus includes a chamber and a carrier that is positioned in the chamber for holding a substrate. The processing apparatus further includes a gas inlet connected to the chamber. The gas inlet is configured to supply a process gas into the chamber. The processing apparatus also includes a coil module positioned around the chamber and configured to transfer the process gas into plasma. In addition, the processing apparatus includes a filter disposed in the chamber. The coil module is configured to change a position of the plasma between a first position and a second position, the first position is located between the gas inlet and the filter, and the second position is located between the filter and the carrier. ## Claims ### Claim 1 A method for forming a semiconductor structure, comprising: transferring a semiconductor substrate onto a carrier in a chamber; supplying a process gas via a gas inlet into the chamber; turning on a first coil of a coil module continuously for a period of time around a first position of the chamber to generate first plasma at the first position in the chamber, wherein the first position is located between the gas inlet and a filter; turning on a second coil of the coil module around a second position of the chamber to generate second plasma at the second position, wherein the second position is located between the filter and the carrier, wherein the second plasma is generated at the second position when the first plasma is generated at the first position; and after generating the second plasma at the second position, turning off the second coil, wherein the second coil is turned on and turned off during the period of time. ### Claim 2 (depends on 1) The method as claimed in claim 1, wherein generating the first plasma by turning on the first coil of the coil module further comprises: positioning the first coil of the coil module between the gas inlet and the filter; and grounding the filter for intercepting charged particles in the first plasma by the filter. ### Claim 3 (depends on 1) The method as claimed in claim 1, wherein the process gas comprises NF3, NH3, He, H2, Cl2, Ar, or HBr. ### Claim 4 (depends on 1) The method as claimed in claim 1, wherein a duty cycle of the supplied pulse is in a range from about 10% to about 30%. ### Claim 5 (depends on 1) The method as claimed in claim 1, wherein generating the second plasma further comprises: supplying a pulse to the coil module and a bottom electrode in the carrier by a power source. ### Claim 6 (depends on 5) The method as claimed in claim 5, wherein the power source supplies synchronic pulse to the second coil and the bottom electrode. ### Claim 7 (depends on 5) The method as claimed in claim 5, wherein the power source supplies asynchronous pulse to the second coil and the bottom electrode. ### Claim 8 A method for forming a semiconductor structure, comprising: providing a first coil and a second coil around a chamber, wherein the first coil is located between a gas inlet and a filter, and the second coil is located between the filter and a carrier; transferring a semiconductor substrate onto the carrier in the chamber; supplying a process gas via the gas inlet into the chamber; turning on the first coil to transform the process gas into plasma; turning on the second coil after the first coil is turned on; turning off the second coil, wherein the second coil is turned on and off when the first coil is continuously turned on; and etching a material layer over the semiconductor substrate by using the plasma generated in the chamber. ### Claim 9 (depends on 8) The method as claimed in claim 8, further comprising: providing a grounded filter in the chamber; and intercepting charged particles in the plasma by the grounded filter. ### Claim 10 (depends on 8) The method as claimed in claim 8, further comprising: turning on the second coil to transform the process gas into another plasma; and turning off the first coil when the second coil is turned on. ### Claim 11 (depends on 8) The method as claimed in claim 8, wherein etching the semiconductor substrate is performed in a period of time from 10 sec to 60 sec. ### Claim 12 (depends on 8) The method as claimed in claim 8, wherein the process gas is supplied in a range from about 10 sccm to about 1000 sccm. ### Claim 13 A method for forming a semiconductor structure, comprising: transferring a semiconductor substrate onto a carrier in a chamber; supplying a process gas via a gas inlet into the chamber; moving a coil module relative to the chamber from a first position to a second position, wherein the first position is located between the gas inlet and a filter in the chamber, and the second position is located between the filter and the carrier; turning on the coil module around the chamber to generate first plasma at the first position in the chamber, wherein the filter is grounded for intercepting charged particles in the first plasma when the first plasma passes through the filter; turning on the coil module around the chamber to generate second plasma at the second position in the chamber; and etching the semiconductor substrate by using the first plasma and the second plasma generated in the chamber. ### Claim 14 (depends on 13) The method as claimed in claim 13, further comprising: controlling a flow of the process gas into the chamber by a shutter disposed in the gas inlet. ### Claim 15 (depends on 13) The method as claimed in claim 13, wherein supplying the process gas further comprises supplying the process gas in a range from about 50 sccm to about 5000 sccm. ### Claim 16 (depends on 13) The method as claimed in claim 13, further comprising controlling a pressure of the chamber from about 10 mTorr to about 1 Torr. ### Claim 17 (depends on 13) The method as claimed in claim 13, further comprising controlling a power of the coil module in a range from about 10 W to about 500 W. ### Claim 18 (depends on 13) The method as claimed in claim 13, wherein supplying the process gas further comprises supplying the process gas via the gas inlet directly over the carrier. ### Claim 19 (depends on 13) The method as claimed in claim 13, further comprising: moving the coil module relative to the chamber from the second position to the first position. ### Claim 20 (depends on 13) The method as claimed in claim 13, wherein etching the semiconductor substrate comprises: forming a U-shaped recess in a fin structure of the semiconductor substrate using the second plasma.