# US 12,002,631 B2 · Electrodeposited dielectric for a solid electrolytic capacitor

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- Number: US 12,002,631 B2
- Document ID: US12002631B2
- Status: Granted
- Kind: B2
- Application number: 17/968,884
- Filed: 2022-10-19
- Published: 2023-04-20
- Granted: 2024-06-04
- Earliest claimed: 2021-10-20
- Assignees: KYOCERA AVX Components Corporation
- Applicants: KYOCERA AVX Components Corporation
- Inventors: Krystof Adamek; Pavel Koci; Jan Petrzilek
- Web page: https://patentgrep.com/patent/US12002631B2

## CPC

- H01G 9/0032: {formation of the dielectric layer}
- H01G 9/0036: {Formation of the solid electrolyte layer}
- H01G 9/025: Solid electrolytes (H01G11/54 takes precedence)
- H01G 9/042: characterised by the material (H01G11/22 takes precedence)
- H01G 9/052: Sintered electrodes
- H01G 9/07: Dielectric layers
- H01G 2009/05: {consisting of tantalum, niobium, or sintered material; Combinations of such electrodes with solid semiconductive electrolytes, e.g. manganese dioxide}
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

A method for forming a solid electrolytic capacitor that includes an anode containing a valve metal composition, a dielectric overlying the anode, and a solid electrolyte overlying the dielectric is provided. The method comprises forming the dielectric by a process that includes placing the anode into contact with an electrolyte containing an ionic liquid and a valve metal salt and applying a potential difference between the anode and a counter electrode to form a dielectric oxide layer.

## Claims

### Claim 1

A method for forming a solid electrolytic capacitor that includes an anode containing a valve metal composition which includes tantalum, a dielectric overlying the anode, and a solid electrolyte overlying the dielectric, the method comprising forming the dielectric by a process that includes placing the anode into contact with an electrolyte containing an ionic liquid and a valve metal salt and applying a potential difference between the anode and a counter electrode to form a dielectric oxide layer which includes tantalum pentoxide.

### Claim 2 (depends on 1)

The method of claim 1, wherein the valve metal salt includes tantalum.

### Claim 3 (depends on 2)

The method of claim 2, wherein the valve metal salt includes tantalum pentafluoride, tantalum pentabromide, tantalum pentaiodide, or a combination thereof.

### Claim 4 (depends on 1)

The method of claim 1, wherein the valve metal composition includes an electrically conductive niobium oxide and the dielectric oxide layer includes niobium pentoxide.

### Claim 5 (depends on 4)

The method of claim 4, wherein the valve metal salt includes niobium.

### Claim 6 (depends on 5)

The method of claim 5, wherein the valve metal salt includes niobium pentafluoride, niobium pentabromide, niobium pentaiodide, or a combination thereof.

### Claim 7 (depends on 1)

The method of claim 1, wherein the ionic liquid contains a cationic species and a counterion.

### Claim 8 (depends on 7)

The method of claim 7, wherein the cationic species includes a pyrrolidinium, imidazolium, or a combination thereof.

### Claim 9 (depends on 7)

The method of claim 7, wherein the counterion includes bis(pentafluoroethylsulfonyl)imide, bis(trifluoromethylsulfonyl)imide, bis(trifluoromethyl)imide, trifluorotris(pentafluoroethyl)phosphate, or a combination thereof.

### Claim 10 (depends on 7)

The method of claim 7, wherein the ionic liquid includes a hydrophobic salt.

### Claim 11 (depends on 1)

The method of claim 1, wherein the molar ratio of the ionic liquid to the valve metal salt is from about 1 to about 50.

### Claim 12 (depends on 1)

The method of claim 1, wherein the molarity of the valve metal salt in the electrolyte is from about 0.01 to about 2 M.

### Claim 13 (depends on 1)

The method of claim 1, wherein the molarity of the ionic liquid in the electrolyte is from about 0.1 to about 15 M.

### Claim 14 (depends on 1)

The method of claim 1, wherein the potential difference is from about −2 to about 0.5 V.

### Claim 15 (depends on 1)

The method of claim 1, wherein the electrolyte has a temperature of from about 50° C. to about 300° C.

### Claim 16 (depends on 1)

The method of claim 1, wherein the process for forming the electrolyte further comprises anodically oxidizing the anode after the dielectric oxide layer is formed.

### Claim 17 (depends on 1)

The method of claim 1, wherein the process for forming the electrolyte further comprises anodically oxidizing the anode before the dielectric oxide layer is formed.

### Claim 18 (depends on 1)

The method of claim 1, wherein the anode is in the form of a sintered porous body.

### Claim 19 (depends on 1)

The method of claim 1, wherein the anode is in the form of a foil.

### Claim 20 (depends on 1)

The method of claim 1, wherein the anode is in the form of a porous body that contains a non-conductive support structure on which is deposited the valve metal composition.

### Claim 21 (depends on 1)

The method of claim 1, wherein the solid electrolyte contains a plurality of conductive polymer particles.

### Claim 22 (depends on 21)

The method of claim 21, wherein the conductive polymer particles contain poly(3,4-ethylenedioxythiophene) or a derivative thereof.

### Claim 23 (depends on 21)

The method of claim 21, wherein the conductive polymer particles also contain a polymeric counterion.