# US 12,002,518 B2 · Memory device performing temperature compensation and operating method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,002,518 B2 - Document ID: US12002518B2 - Status: Granted - Kind: B2 - Application number: 17/710,283 - Filed: 2022-03-31 - Published: 2023-02-23 - Granted: 2024-06-04 - Earliest claimed: 2021-08-18 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Yongsung Cho; Kyoman Kang; Minhwi Kim; Ilhan Park; Jinyoung Chun - Web page: https://patentgrep.com/patent/US12002518B2 ## CPC - G11C 16/24: Bit-line control circuits - G11C 16/0483: {comprising cells having several storage transistors connected in series} - G11C 16/26: Sensing or reading circuits; Data output circuits - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A memory device is provided. The memory device includes: a memory cell array including a plurality of memory cells; a page buffer circuit connected to the memory cell array through a plurality of bit lines and including a page buffer connected to each of the plurality of bit lines, the page buffer including at least one first latch for storing data based on a voltage level of a first sensing node; and a control circuit configured to adjust a level of a voltage signal provided to the page buffer circuit. The page buffer includes a trip control transistor arranged between the at least one first latch and the first sensing node, and wherein the control circuit is further configured to, based on a read operation being performed on the memory cell array, control a trip control voltage to be provided to a gate of the trip control transistor. A level of the trip control voltage varies according to a temperature of the memory device. ## Claims ### Claim 1 A memory device comprising: a memory cell array including a plurality of memory cells; a page buffer circuit connected to the memory cell array through a plurality of bit lines and comprising a page buffer connected to each of the plurality of bit lines, the page buffer comprising at least one first latch for storing data based on a voltage level of a first sensing node; and a control circuit configured to adjust a level of a voltage signal provided to the page buffer circuit, wherein the page buffer further comprises a trip control transistor arranged between the at least one first latch and the first sensing node, and wherein the control circuit is further configured to, based on a read operation being performed on the memory cell array, control a trip control voltage to be provided to a gate of the trip control transistor, and control a level of the trip control voltage to vary according to a temperature of the memory device. ### Claim 2 (depends on 1) The memory device of claim 1, wherein a sensing trip level of the page buffer corresponds to a difference between a threshold voltage level of the trip control transistor and a level of the trip control voltage, and wherein the control circuit is further configured to increase the level of the trip control voltage as the temperature decreases. ### Claim 3 (depends on 2) The memory device of claim 2, wherein the page buffer further comprises at least one transistor arranged between the first sensing node and a bit line, and wherein the control circuit is further configured to control a level of a gate bias applied to the at least one transistor to increase as the temperature decreases. ### Claim 4 (depends on 3) The memory device of claim 3, wherein, based on the page buffer being connected to an unselected bit line, a voltage level of the first sensing node of the page buffer is lower than the sensing trip level. ### Claim 5 (depends on 3) The memory device of claim 3, wherein a second sensing node is provided between the at least one first latch and one electrode of the trip control transistor, and wherein, based on the page buffer being connected to a selected bit line, the second sensing node is precharged through the first sensing node and the trip control transistor. ### Claim 6 (depends on 5) The memory device of claim 5, wherein, when the page buffer is connected to the selected bit line, during a development period for the first sensing node, a voltage level difference between an on-cell and an off-cell of the second sensing node is greater than a voltage level difference between an on-cell and an off-cell of the first sensing node. ### Claim 7 (depends on 5) The memory device of claim 5, wherein, during a precharge period, the trip control voltage has a first level to control the trip control transistor to electrically connect the first sensing node with the second sensing node, and wherein, during a development period, the level of the trip control voltage is decreased to a second level that varies according to the temperature. ### Claim 8 (depends on 7) The memory device of claim 7, further comprising a voltage generator configured to provide the trip control voltage to the trip control transistor, wherein the voltage generator comprises a voltage generation circuit configured to generate the trip control voltage, and a capacitance circuit connected to a first node to which the trip control voltage is provided through one or more transistors, and wherein the control circuit is further configured to control, in a process in which the level of the trip control voltage is decreased from the first level to the second level, the one or more transistors to turn on and electrically connect the first node and the capacitance circuit. ### Claim 9 (depends on 1) The memory device of claim 1, wherein the at least one first latch comprises a latch circuit configured to store data in a according to a voltage level of the first sensing node, and a first transistor connected between the latch circuit and a ground voltage, and wherein a gate of the first transistor is connected to the first sensing node through the trip control transistor. ### Claim 10 (depends on 1) The memory device of claim 1, wherein the memory device comprises vertical NAND memory cells. ### Claim 11 A page buffer of a memory device, wherein the page buffer is arranged to correspond to a first bit line of a plurality of bit lines of the memory device, and comprises: a first latch configured to latch data based on a voltage level of a first sensing node of the page buffer; a shut off transistor connected to the first bit line and configured to operate based on a shut-off control signal; a bit line connection transistor arranged between the shut off transistor and the first sensing node and configured to operate based on a bit line connection control signal; a bit line clamping transistor arranged between a first node and a power supply voltage, wherein the bit line clamping transistor is configured to operate based on a bit line clamping control signal, and the first node is arranged between the shut off transistor and the bit line connection transistor; and a trip control transistor arranged between the first latch and the first sensing node, and configured to operate based on a trip control voltage, wherein the page buffer is configured to control, as a temperature of the memory device decreases, a level of any one or any combination of the shut-off control signal, the bit line connection control signal, and the bit line clamping control signal to increase, and wherein the page buffer is configured to control, as the level of the trip control voltage increases, a sensing trip level of the page buffer to increase. ### Claim 12 (depends on 11) The page buffer of claim 11, wherein the sensing trip level corresponds to a difference between a threshold voltage level of the trip control transistor and the level of the trip control voltage. ### Claim 13 (depends on 12) The page buffer of claim 12, wherein, based on the first bit line being an unselected bit line, the page buffer is configured to increase the voltage level of the first sensing node as a level of any one or any combination of the shut-off control signal, the bit line connection control signal, and the bit line clamping control signal increases, and wherein the voltage level of the first sensing node is lower than the sensing trip level. ### Claim 14 (depends on 11) The page buffer of claim 11, wherein the page buffer comprises a latch circuit configured to store data based on the voltage level of the first sensing node, and a first transistor connected between the latch circuit and a ground voltage, and wherein a gate of the first transistor is connected to the first sensing node through the trip control transistor. ### Claim 15 (depends on 11) The page buffer of claim 11, wherein a second sensing node is arranged between the first latch and one electrode of the trip control transistor, and wherein the page buffer is configured to, based on the first bit line being a selected bit line during a precharge period of the page buffer, precharge the second sensing node through the first sensing node and the trip control transistor. ### Claim 16 (depends on 15) The page buffer of claim 15, wherein during the precharge period of the page buffer, the trip control voltage has a first level such that the second sensing node is precharged, and wherein, during a development period of the page buffer, a level of the trip control voltage is decreased to a second level that varies according to the temperature. ### Claim 17 A memory device comprising: a memory cell array comprising a plurality of memory cells; a page buffer circuit connected to the memory cell array through a plurality of bit lines and comprising a page buffer connected to one of the plurality of bit lines, the page buffer comprising at least one first latch configured to store data based on a voltage level of a sensing node; and a control circuit configured to adjust a level of a voltage signal provided to the page buffer circuit, wherein the page buffer further comprises one or more transistors connected between a corresponding bit line and the sensing node, and a trip control transistor arranged between the sensing node and the at least one first latch, and wherein the control circuit is further configured to, as a temperature of the memory device decreases, control a level of a trip control voltage applied to a gate of the trip control transistor to increase. ### Claim 18 (depends on 17) The memory device of claim 17, wherein the control circuit is further configured to, as the temperature of the memory device decreases, increase the trip control voltage, and wherein a voltage level applied to a sensing node of the page buffer connected to an unselected bit line is lower than a sensing trip level. ### Claim 19 (depends on 17) The memory device of claim 17, wherein the at least one first latch comprises a latch circuit configured to store data according to a voltage level of the sensing node, and a first transistor connected between the latch circuit and a ground voltage, and wherein a gate of the first transistor is connected to the sensing node through the trip control transistor. ### Claim 20 (depends on 19) The memory device of claim 19, wherein, during a precharge period of the page buffer circuit, the trip control voltage has a first level to control the trip control transistor to electrically connect the sensing node with another sensing node arranged between the at least one first latch and the trip control transistor, and wherein, during a development period of the page buffer circuit, a level of the trip control voltage is decreased to a second level that varies according to the temperature.