# US 12,001,146 B2 · Overlay measurment device

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- Number: US 12,001,146 B2
- Document ID: US12001146B2
- Status: Granted
- Kind: B2
- Application number: 17/292,994
- Filed: 2019-09-11
- Published: 2022-02-03
- Granted: 2024-06-04
- Earliest claimed: 2018-09-14
- Assignees: Auros Technology, Inc.
- Applicants: Auros Technology, Inc.
- Inventors: Sun Hyoung Lee; Kil Soo Lee; Seung Soo Lee; Gyu Nam Park
- Web page: https://patentgrep.com/patent/US12001146B2

## CPC

- G03F 7/70633: {Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching}
- G02B 27/0955: {Lenses (lenses per se G02B3/00)}
- G02B 27/1006: {for splitting or combining different wavelengths (G02B27/1086, G02B27/141 take precedence)}
- G02B 27/141: {using dichroic mirrors}
- G03F 7/20: Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00)
- G03F 7/70641: {Focus}
- G02B 21/18: Arrangements with more than one light path, e.g. for comparing two specimens
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

An overlay measurement device for measuring an error between a first overlay mark and a second overlay mark respectively formed on different layers formed on a wafer is proposed. The device includes a light source, a first beam splitter configured to split a beam emitted from the light source into two beams, a first color filter configured to adjust a center wavelength and a band width of one of the beams split by the first beam splitter so that the center wavelength and the band width of one of the beams become suitable for acquiring an image of the first overlay mark.

## Claims

### Claim 1

An overlay measurement device for measuring an error between a first overlay mark and a second overlay mark respectively formed on different layers formed on a wafer, comprising:
a light source;
a first beam splitter configured to split a beam emitted from the light source into a first beam and a second beam;
a first color filter configured to adjust a first center wavelength and a first band width of the first beam so that the first center wavelength and the first band width of the first beam become suitable for acquiring an image of the first overlay mark;
a second color filter configured to adjust a second center wavelength and a second band width of the second beam of the two beams split by the first beam splitter so that the second center wavelength and the second band width of the second beam become suitable for acquiring an image of the second overlay mark;
a beam combiner configured to combine the first beam and the second beam;
an objective lens configured to condense a beam combined by the beam combiner at a measurement position on the wafer and collect a beam reflected from the measurement position, wherein the first center wavelength and the first band width of the first beam are suitable for acquiring the image of the first overlay mark in the beam combined by the beam combiner and in the beam reflected from the measurement position and collected by the objective lens, and the second center wavelength and the second band width of the second beam are suitable for acquiring the image of the second overlay mark in the beam combined by the beam combiner and in the beam reflected from the measurement position and collected by the objective lens;
a second beam splitter configured to split the beam reflected from the measurement position and collected by the objective lens into a third beam having the first center wavelength and the first band width and a fourth beam having the second center wavelength and the second band width;
a first detector configured to acquire the image of the second overlay mark by detecting the third beam having the first center wavelength and the first band width;
a second detector configured to acquire the image of the first overlay mark by detecting the fourth beam having the second center wavelength and the second band width;
a third beam splitter configured to split the beam passed through the beam combiner into two beams; and
a beam detector configured to analyze an optical property of one of the beams split by the third beam splitter,
wherein the other of the beams split by the third beam splitter is directed toward the objective lens, and the other of the beams is condensed at a measurement position on the wafer by the objective lens.

### Claim 2 (depends on 1)

The device according to claim 1, further comprising:
a focus actuator configured to adjust a distance between the second beam splitter and the second detector.

### Claim 3 (depends on 2)

The device according to claim 2, further comprising:
a zoom lens installed between the second beam splitter and the focus actuator and configured to match magnifications of the image of the second overlay mark and the image of the first overlay mark by using a position change value for the second detector actuated by the focus actuator.

### Claim 4 (depends on 1)

The device according to claim 1, wherein the first beam splitter and the second beam splitter are configured to split an incident beam into a reflected beam and a transmitted beam.

### Claim 5 (depends on 1)

The device according to claim 1, wherein the second beam splitter includes a tube beam splitter and a dichroic filter.