# US 12,001,140 B2 · Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,001,140 B2 - Document ID: US12001140B2 - Status: Granted - Kind: B2 - Application number: 17/169,757 - Filed: 2021-02-08 - Published: 2021-06-03 - Granted: 2024-06-04 - Earliest claimed: 2018-09-07 - Assignees: FUJIFILM Corporation - Applicants: FUJIFILM Corporation - Inventors: Kazunari Yagi; Akihiro Kaneko; Takashi Kawashima; Akiyoshi Goto - Web page: https://patentgrep.com/patent/US12001140B2 ## CPC - G03F 7/0046: {with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)} - G03F 7/039: Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) - C08F 212/24: {Phenols or alcohols} - C08F 220/1806: {C6-(meth)acrylate, e.g. (cyclo)hexyl (meth)acrylate or phenyl (meth)acrylate} - C08F 220/24: containing perhaloalkyl radicals - C08F 220/585: {and containing other heteroatoms, e.g. 2-acrylamido-2-methylpropane sulfonic acid [AMPS]} - G03F 7/038: Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) - G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition} - G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS ## Abstract The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin having a polarity that increases by the action of an acid; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin has a repeating unit represented by General Formula (B-1). ## Claims ### Claim 1 An actinic ray-sensitive or radiation-sensitive resin composition comprising: a resin having a polarity that increases by an action of an acid; and a compound that generates an acid upon irradiation with actinic rays or radiation, wherein the resin has a repeating unit represented by General Formula (B-1), in General Formula (B-1), X represents —CO—, —SO—, or —SO2—, R1 to R3 each independently represent a hydrogen atom or an organic group, and L represents a divalent linking group having a heteroatom as a ring member atom. ### Claim 2 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the repeating unit represented by General Formula (B-1) is a repeating unit represented by General Formula (B-2), in General Formula (B-2), X represents —CO—, —SO—, or —SO2—, Y represents —O—, —S—, —SO—, —SO2—, or —NR6—, and R1 to R6 each independently represent a hydrogen atom or an organic group. ### Claim 3 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein at least one of R2 or R3 is an electron-withdrawing group. ### Claim 4 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein both R2 and R3 are electron-withdrawing groups. ### Claim 5 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein at least one of R2 or R3 is an electron-withdrawing group having a fluorine atom. ### Claim 6 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the repeating unit represented by General Formula (B-1) has three or more fluorine atoms. ### Claim 7 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the repeating unit represented by General Formula (B-1) has one or more groups selected from the group consisting of a carboxylic acid group protected by an acid-eliminable group, a phenolic hydroxyl group protected by an acid-eliminable group, and a hexafluoroisopropanol group protected by an acid-eliminable group. ### Claim 8 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein R1 has one or more groups selected from the group consisting of a carboxylic acid group protected by an acid-eliminable group, a phenolic hydroxyl group protected by an acid-eliminable group, and a hexafluoroisopropanol group protected by an acid-eliminable group. ### Claim 9 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein a content of the repeating unit represented by General Formula (B-1) in the resin is 10% to 80% by mass with respect to all the repeating units. ### Claim 10 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein a content of fluorine atoms in the resin is 15% to 40% by mass with respect to all the repeating units. ### Claim 11 (depends on 1) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein a weight-average molecular weight of the resin is 3,500 to 25,000. ### Claim 12 (depends on 1) A resist film formed from the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1. ### Claim 13 (depends on 1) A pattern forming method comprising: a step of forming a resist film using the actinic ray-sensitive or radiation-sensitive resin composition according to claim 1; a step of exposing the resist film; and a step of developing the exposed resist film using a developer. ### Claim 14 (depends on 13) A method for manufacturing an electronic device, comprising the pattern forming method according to claim 13. ### Claim 15 (depends on 2) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 2, wherein at least one of R2 or R3 is an electron-withdrawing group. ### Claim 16 (depends on 2) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 2, wherein both R2 and R3 are electron-withdrawing groups. ### Claim 17 (depends on 2) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 2, wherein at least one of R2 or R3 is an electron-withdrawing group having a fluorine atom. ### Claim 18 (depends on 2) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 2, wherein the repeating unit represented by General Formula (B-2) has three or more fluorine atoms. ### Claim 19 (depends on 2) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 2, wherein the repeating unit represented by General Formula (B-2) has one or more groups selected from the group consisting of a carboxylic acid group protected by an acid-eliminable group, a phenolic hydroxyl group protected by an acid-eliminable group, and a hexafluoroisopropanol group protected by an acid-eliminable group. ### Claim 20 (depends on 2) The actinic ray-sensitive or radiation-sensitive resin composition according to claim 2, wherein R1 has one or more groups selected from the group consisting of a carboxylic acid group protected by an acid-eliminable group, a phenolic hydroxyl group protected by an acid-eliminable group, and a hexafluoroisopropanol group protected by an acid-eliminable group.