# US 12,001,098 B2 · LED backlighting system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,001,098 B2 - Document ID: US12001098B2 - Status: Granted - Kind: B2 - Application number: 17/641,368 - Filed: 2020-11-03 - Published: 2024-02-08 - Granted: 2024-06-04 - Earliest claimed: 2019-11-25 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Ulrich Streppel - Web page: https://patentgrep.com/patent/US12001098B2 ## CPC - G02F 1/133605: {including specially adapted reflectors} - H10H 20/855: Optical field-shaping means, e.g. lenses - G02F 1/133603: {with LEDs} - G02F 1/133607: {the light controlling member including light directing or refracting elements, e.g. prisms or lenses} - H10H 20/856: Reflecting means - G02F 1/133606: {including a specially adapted diffusing, scattering or light controlling members} - H10W 90/00: Package configurations - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present invention relates to an LED backlighting system comprising a substrate, an optoelectronic semiconductor chip assembly, a reflector and a diffuser element. The optoelectronic semiconductor chip assembly is disposed on an upper side of the substrate. The reflector has a through-hole that extends between a lower opening on an underside of the reflector and an upper opening on an upper side of the reflector. The reflector is disposed on the upper side of the substrate so that the underside of the reflector is facing the upper side of the substrate. The optoelectronic semiconductor chip assembly is disposed in the through-hole of the reflector. The diffuser element has an upper side and an underside. The diffuser element is disposed above the upper side of the reflector so that the underside of the diffuser element is facing the upper side of the reflector. ## Claims ### Claim 1 An LED backlighting system comprising a carrier, an optoelectronic semiconductor chip arrangement, a reflector and a diffuser element, wherein the optoelectronic semiconductor chip arrangement is arranged at a top side of the carrier, wherein the reflector has a through opening extending between a lower opening at an underside of the reflector and an upper opening at a top side of the reflector, wherein the reflector is arranged at the top side of the carrier, wherein the underside of the reflector faces the top side of the carrier, wherein the optoelectronic semiconductor chip arrangement is arranged in the through opening of the reflector, wherein the diffuser element has a top side and an underside, wherein the diffuser element is arranged over the top side of the reflector, wherein the underside of the diffuser element faces the top side of the reflector, and wherein the underside of the diffuser element is embodied as a freeform surface, wherein the diffuser element has a center axis ROOM defined by a central point of its top side and a central point of its underside, wherein a thickness of the diffuser element measured between the underside of the diffuser element and the top side of the diffuser element parallel to the center axis has different values in different regions of the diffuser element, wherein the thickness of the diffuser element has a larger value at a location along a diagonal plane than at the center axis of the diffuser element. ### Claim 2 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the lower opening of the reflector has a circular disk shape, an elliptic shape or a cushion shape. ### Claim 3 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the upper opening of the reflector has a cushion shape or a square shape, wherein the upper opening has rounded corners. ### Claim 4 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the reflector has at its top side a peripheral edge extending around the upper opening, and at least one spacer arranged at the peripheral edge, wherein the diffuser element bears against the spacer, thus resulting in an air gap between the peripheral edge of the reflector and the underside of the diffuser element. ### Claim 5 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the thickness of the diffuser element has a smaller value at a location along a side center plane than at the center axis of the diffuser element. ### Claim 6 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the diffuser element has a same symmetry as the reflector. ### Claim 7 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the underside of the diffuser element has a peripheral edge bearing on the top side of the reflector. ### Claim 8 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the diffuser element comprises embedded diffuser particle comprising Al2O3, TiO2 or SiO2. ### Claim 9 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the LED backlighting system comprises a film stack arranged at the top side of the diffuser element. ### Claim 10 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the optoelectronic semiconductor chip arrangement has a top side, an underside and a plurality of side surfaces, wherein the optoelectronic semiconductor chip arrangement is configured to emit at least fifty percent of an emitted luminous power at the side surfaces. ### Claim 11 (depends on 10) The LED backlighting system as claimed in claim 10, wherein the optoelectronic semiconductor chip arrangement comprises an optoelectronic semiconductor chip, wherein the optoelectronic semiconductor chip is embedded into a wavelength-converting material forming the side surfaces of the optoelectronic semiconductor chip arrangement, wherein a primary reflector is arranged at a top side of the wavelength-converting material and forms the top side of the optoelectronic semiconductor chip arrangement. ### Claim 12 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the reflector together with further reflectors of identical type forms a continuous reflector assemblage, wherein the diffuser element together with further diffuser elements of identical type forms a continuous diffuser assemblage, wherein in each case a further optoelectronic semiconductor chip arrangement of identical type is arranged in the through opening of each further reflector. ### Claim 13 (depends on 1) The LED backlighting system as claimed in claim 1, wherein the top side of the diffuser element is embodied as a plane surface.