# US 12,000,866 B2 · Detection unit, semiconductor film layer inspection apparatus including the same, and semiconductor film layer inspection method using the same

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- Number: US 12,000,866 B2
- Document ID: US12000866B2
- Status: Granted
- Kind: B2
- Application number: 17/945,743
- Filed: 2022-09-15
- Published: 2023-10-26
- Granted: 2024-06-04
- Earliest claimed: 2022-04-20
- Assignees: EnVigth Co., Ltd.
- Applicants: EnVigth Co., Ltd.
- Inventors: Hyoung Sik Kim
- Web page: https://patentgrep.com/patent/US12000866B2

## CPC

- G01R 1/07307: {with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card}
- G01R 3/00: Apparatus or processes specially adapted for the manufacture {or maintenance} of measuring instruments {, e.g. of probe tips}
- G01R 31/2648: {Characterising semiconductor materials (testing of materials or semi-finished products G01R31/2831; testing during manufacture H10P74/00)}
- G01R 31/2886: {Features relating to contacting the IC under test, e.g. probe heads; chucks (G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06)}
- G01R 31/2887: {involving moving the probe head or the IC under test; docking stations (moving single probes G01R1/06705; moving individual probes in multiple probes G01R1/07392)}
- G01R 35/005: {Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references (G01R33/0035, G01R35/002 take precedence)}
- H10P 74/207: {Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics}
- G01R 31/2831: {Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates (G01R31/318511 takes precedence; testing during manufacture H10P74/00)}
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides a semiconductor film layer inspection apparatus (10) for detecting the electrical characteristics of a semiconductor film layer (30) formed on one surface of a substrate (20) and including an oxide semiconductor layer (31), and a detection unit used therein. The apparatus includes a base unit (40), a detection unit (200) and a carrier generator (300 300a and 300b). The detection unit (200) includes: a detection probe pin (230) and a detection probe module (202). The detection probe pin (230) includes a detection probe pin body (231) and a detection probe pin contactor unit (233). The detection probe pin contactor unit at least partially forms a plurality of independently detectable and operable segmented pin contactor unit blocks.

## Claims

### Claim 1

A semiconductor film layer inspection apparatus (10) for detecting the electrical characteristics of a semiconductor film layer (30) formed on one surface of a substrate (20) and including an oxide semiconductor layer (31), the apparatus comprising:
a base unit (40) configured to allow the substrate to be seatingly disposed on one surface thereof;
a detection signal generator (200) configured to apply an electrical signal based on close contact with at least two points on one surface of the oxide semiconductor layer, so as to detect the electrical characteristics of the oxide semiconductor layer; and
a carrier generator (300, 300a, 300b) configured to increase a concentration of a carrier of the oxide semiconductor layer,
wherein the detection signal generator (200) comprises:
a detection probe pin (230) configured to be brought into close contact with one or more points spaced apart from each other on one surface of the oxide semiconductor layer; and
a detection signal generating and sensing probe (202) configured to generate a detection signal for application to the detection probe pin (230) to detect the electrical characteristics of the oxide semiconductor layer, and configured to sense a detection sensing signal inputted thereto from the detection probe pin (230),
wherein the detection probe pin (230) comprises:
a detection probe pin body (231) disposed spaced apart from the oxide semiconductor layer; and
a detection probe pin contactor unit (233) disposed at one end thereof at the detection probe pin body (231) and brought at the other end thereof into direct contact with the oxide semiconductor layer, and
wherein the detection probe pin contactor unit (233) at least partially forms a plurality of independently detectable and operable segmented pin contactor unit blocks.

### Claim 2 (depends on 1)

The semiconductor film layer inspection apparatus (10) according to claim 1, wherein the detection probe pin (230) comprises one or more detection probe sub pins (230sub), and the detection probe pin contactor unit (233) disposed on each of the detection probe sub pins (230sub) forms an independently detectable and operable pin contactor unit block in units of each detection probe sub pin (230sub).

### Claim 3 (depends on 1)

The semiconductor film layer inspection apparatus (10) according to claim 1, further comprising a detecting calibration module (500) disposed between the detection signal generating and sensing probe (202) and the detection probe pin (230), and configured to apply, as an independently operable detection signal, a detection signal from the detection signal generating and sensing probe (202) to the detection probe pin contactor unit (233) that forms one or more independently detectable and operable pin contactor unit blocks and configured to process an independently operable detection sensing signal applied thereto from the detection probe pin contactor unit (233) for application to the detection signal generating and sensing probe (202).

### Claim 4 (depends on 3)

The semiconductor film layer inspection apparatus (10) according to claim 3, wherein the detecting calibration module (500) comprises:
a detecting calibration data selector (520) configured to select a target pin contactor unit block from among a plurality of pin contactor unit blocks using the detection signal from the detection signal generating and sensing probe (202) as the independently operable detection signal, and configured to output, as the independently operable detection sensing signal from the detection probe pin contactor unit (233) of a corresponding pin contactor unit block of the pin contactor unit blocks, the detection sensing signal applied to the detecting calibration module (500) from the detection probe pin contactor unit (233); and
a detecting calibration control unit (510) configured to determine whether to use the independently operable detection sensing signal from the detection probe pin contactor unit (233) of the corresponding pin contactor unit block based on the independently operable detection sensing signals of the plurality of pin contactor unit blocks and information on a number of the detection probe pin contactor units (233), and configured to perform a normalization of the electrical characteristics of the semiconductor film layer (30) including the oxide semiconductor layer (31) based on the number of the detection probe pin contactor units (233) depending on whether to use the independently operable detection sensing signal from the detection probe pin contactor unit (233) of the corresponding pin contactor unit block.

### Claim 5 (depends on 4)

The semiconductor film layer inspection apparatus (10) according to claim 4, wherein the detecting calibration control unit (510) comprises:
a detecting calibration calculation control unit (511) configured to calculate independently operable detection sensing signals per the number of the detection probe pin contactor units in the case of including the corresponding pin contactor unit block based on the independently operable detection sensing signals of the plurality of pin contactor unit blocks and information on the number of the detection probe pin contactor units (233);
a detecting calibration determination control unit (513) configured to compare the independently operable detection sensing signals per the number of the detection probe pin contactor units, calculated by the calibration calculation control unit (511) with independently operable detection sensing signal reference values per the number of the detection probe pin contactor units, which are stored in a detecting calibration storage unit (530), and determine whether to use the independently operable detection sensing signals per the number of the detection probe pin contactor units as independently operable detection sensing signals; and
a detecting calibration update control unit (515) configured to update the independently operable detection sensing signals per the number of the detection probe pin contactor units as the independently operable detection sensing signal reference values per the number of the detection probe pin contactor units, which are stored in the detecting calibration storage unit (530) if the detecting calibration determination control unit (513) determines to use the independently operable detection sensing signals per the number of the detection probe pin contactor units as independently operable detection sensing signals.

### Claim 6 (depends on 1)

The semiconductor film layer inspection apparatus (10) according to claim 1, wherein the detection probe pin body (231) comprises:
a detection probe pin body base (231-1) configured to allow the detection probe pin contactor unit (233) to be disposed thereon; and
a detection probe pin body line (231-2) disposed on one surface of the detection probe pin body base (231-1) to allow the detection probe pin contactor unit (233) to be electrically connected to the detection probe pin contactor unit (233).

### Claim 7 (depends on 6)

The semiconductor film layer inspection apparatus (10) according to claim 6, wherein the detection probe pin body base (231-1) comprises an FPCB, and
wherein the detection probe pin contactor unit (233) comprises one or more detection probe pin contactors (235) disposed on one surface of the detection probe pin body base (231-1) so as to be electrically connected to the detection probe pin body line (231-2), and configured to be brought into direct contact with the oxide semiconductor layer.

### Claim 8 (depends on 7)

The semiconductor film layer inspection apparatus (10) according to claim 7, wherein at least one of the one or more detection probe pin contactors (235) is applied with an electrical signal different from that of at least another adjacent detection probe pin contactor (235).

### Claim 9 (depends on 7)

The semiconductor film layer inspection apparatus (10) according to claim 7, wherein the one or more detection probe pin contactors (235) form a structure in which at least one part thereof captures another part thereof.

### Claim 10 (depends on 1)

The semiconductor film layer inspection apparatus (10) according to claim 1, wherein the detection signal generator (200) comprises a detection probe moving unit (240) configured to allow the detection probe pin (230) to be disposed at one end thereof so as to be relatively movable with respect to the base unit (40).

### Claim 11 (depends on 10)

The semiconductor film layer inspection apparatus (10) according to claim 10, wherein the detection probe moving unit (240) comprises:
a detection probe moving body (241) configured to allow the detection probe pin (230) to be disposed at one end thereof; and
a detection probe moving guide (280) having one end disposed at the detection probe moving body (241) and another end disposed so as to be relatively movable with respect to the base unit (40).

### Claim 12 (depends on 11)

The semiconductor film layer inspection apparatus (10) according to claim 11, wherein the detection probe moving unit (240) comprises a detection probe damping unit (270) configured to damp a movement of the detection probe moving body (241).

### Claim 13 (depends on 12)

The semiconductor film layer inspection apparatus (10) according to claim 12, wherein the detection probe damping unit (270) comprises:
a damping moving body accommodating part (271) disposed at an inside of the detection probe moving body (241);
a damping elastic part (273) disposed inside the damping body accommodating part (271) in such a manner as to be supported at one end thereof by an inner side of the damping body accommodating part (271); and
a damping plunger (275) brought at one end thereof into contact with the damping elastic part (273) and disposed at another end thereof within the damping body accommodating part (271) so as to be oriented toward the base unit (40) to limit the movement of the detection probe moving body (241).

### Claim 14 (depends on 13)

The semiconductor film layer inspection apparatus (10) according to claim 13, wherein the damping plunger (275) comprises:
a damping plunger body (2751) supported at an end thereof by the damping elastic part (273) in an elastic contact manner; and
a damping plunger shaft (2753) connected at one end thereof to the damping plunger body (2751) and accommodatingly disposed at another end thereof within the damping moving body accommodating part (271) along a longitudinal direction of the damping moving body accommodating part (271).

### Claim 15 (depends on 14)

The semiconductor film layer inspection apparatus (10) according to claim 14, wherein the detection probe moving unit (240) comprises a detection probe moving sensing unit (290) disposed at the base unit (40) so as to be opposed to the damping plunger body (2751), and configured to be brought into contact with the damping plunger body (2751) to senses a contact state.

### Claim 16 (depends on 15)

The semiconductor film layer inspection apparatus (10) according to claim 15, wherein the detection probe moving sensing unit (290) comprises a pressure sensor.

### Claim 17

A detection signal generator (200) configured to apply an electrical signal based on close contact with at least two points on one surface of an oxide semiconductor layer to detect electrical characteristics of the oxide semiconductor layer,
wherein the detection signal generator (200) comprises:
a detection probe pin (230) configured to be brought into close contact with one or more points spaced apart from each other on one surface of the oxide semiconductor layer; and
a detection signal generating and sensing probe (202) configured to generate a detection signal for application to the detection probe pin (230) to detect the electrical characteristics of the oxide semiconductor layer, and configured to sense a detection sensing signal inputted thereto from the detection probe pin (230),
wherein the detection probe pin (230) comprises:
a detection probe pin body (231) disposed spaced apart from the oxide semiconductor layer; and
a detection probe pin contactor unit (233) disposed at one end thereof at the detection probe pin body (231) and brought at another end thereof into direct contact with the oxide semiconductor layer,
wherein the detection probe pin contactor unit (233) at least partially forms a plurality of independently detectable and operable segmented pin contactor unit blocks,
wherein the detection probe pin body (231) comprises:
a detection probe pin body base (231-1) configured to allow the detection probe pin contactor unit (233) to be disposed thereon; and
a detection probe pin body line (231-2) disposed on one surface of the detection probe pin body base (231-1) so as to be electrically connected to the detection probe pin contactor unit (233),
wherein the detection probe pin body base (231-1) comprises an FPCB, and the detection probe pin contactor unit (233) comprises one or more detection probe pin contactors (235) disposed on one surface of the detection probe pin body base (231-1) so as to be electrically connected to the detection probe pin body line (231-2), and configured to be brought into direct contact with the oxide semiconductor layer, and
wherein at least one of the one or more detection probe pin contactors (235) is applied with an electrical signal different from that of at least another adjacent detection probe pin contactor (235).

### Claim 18 (depends on 17)

The detection signal generator (200) according to claim 17, wherein the one or more detection probe pin contactors (235) form a structure in which at least one part thereof captures another part thereof.

### Claim 19 (depends on 17)

The detection signal generator (200) according to claim 17, wherein the detection signal generator (200) comprises a detection probe moving unit (240) configured to allow the detection probe pin (230) to be disposed at one end thereof so as to be relatively movable with respect to a base unit (40) configured to allow a substrate on which a semiconductor film layer (30) comprising the oxide semiconductor layer is formed to be seatingly disposed on one surface thereof.

### Claim 20 (depends on 19)

The detection signal generator (200) according to claim 19, wherein the detection probe moving unit (240) comprises:
a detection probe moving body (241) configured to allow the detection probe pin (230) to be disposed at one end thereof; and
a detection probe moving guide (280) having one end disposed at the detection probe moving body (241) and another end disposed so as to be relatively movable with respect to the base unit (40) configured to allow the substrate to be seatingly disposed on one surface thereof.

### Claim 21 (depends on 20)

The detection signal generator (200) according to claim 20, wherein the detection probe moving unit (240) comprises a detection probe damping unit (270) configured to damp a movement of the detection probe moving body (241).

### Claim 22 (depends on 21)

The detection signal generator (200) according to claim 21, wherein the detection probe damping unit (270) comprises:
a damping moving body accommodating part (271) disposed at an inside of the detection probe moving body (241);
a damping elastic part (273) disposed inside the damping body accommodating part (271) in such a manner as to be supported at one end thereof by the inner side of the damping body accommodating part (271); and
a damping plunger (275) brought at one end thereof into contact with the damping elastic part (273) and disposed at another end thereof within the damping body accommodating part (271) so as to be oriented toward the base unit (40) having one surface on which the substrate is seatingly disposed to limit the movement of the detection probe moving body (241).

### Claim 23 (depends on 22)

The detection signal generator (200) according to claim 22, wherein the damping plunger (275) comprises:
a damping plunger body (2751) supported at an end thereof by the damping elastic part (273) in an elastic contact manner; and
a damping plunger shaft (2753) connected at one end thereof to the damping plunger body (2751) and accommodatingly disposed at another end thereof within the damping moving body accommodating part (271) along a longitudinal direction of the damping moving body accommodating part (271).

### Claim 24 (depends on 23)

The detection signal generator (200) according to claim 23, wherein the detection probe moving unit (240) comprises a detection probe moving sensing unit (290) disposed at the base unit (40) so as to be opposed to the damping plunger body (2751), and configured to be brought into contact with the damping plunger body (2751) to senses a contact state.

### Claim 25 (depends on 24)

The detection signal generator (200) according to claim 24, wherein the detection probe moving sensing unit (290) comprises a pressure sensor.

### Claim 26

A method of inspecting a semiconductor film layer using a semiconductor film layer inspection apparatus (10) for detecting electrical characteristics of the semiconductor film layer (30) formed on one surface of a substrate (20) and including an oxide semiconductor layer (31), the apparatus comprising: a base unit (40) configured to allow the substrate to be seatingly disposed on one surface thereof; a
detection signal generator (200) configured to apply an electrical signal based on close contact with at least two points on one surface of the oxide semiconductor layer to detect the electrical characteristics of the oxide semiconductor layer; and a carrier generator (300, 300a, 300b) configured to increase a concentration of a carrier of the oxide semiconductor layer, wherein the detection signal generator (200) comprises: a detection probe pin (230) configured to be brought into close contact with one or more points spaced apart from each other on one surface of the oxide semiconductor layer; and a detection signal generating and sensing probe (202) configured to generate a detection signal for application to the detection probe pin (230) to detect the electrical characteristics of the oxide semiconductor layer, and configured to sense a detection sensing signal inputted thereto from the detection probe pin (230), wherein the detection probe pin (230) comprises: a detection probe pin body (231) disposed spaced apart from the oxide semiconductor layer; and a detection probe pin contactor disposed at one end thereof at the detection probe pin body (231) and brought at the another end thereof into direct contact with the oxide semiconductor layer, and wherein the detection probe pin contactor unit (233) at least partially forms a plurality of independently detectable and operable segmented pin contactor unit blocks,
wherein the method comprises:
a provision step (S1) of providing the semiconductor film layer inspection apparatus;
a preparation step (S10) of preparing the substrate (20) having one surface on which the oxide semiconductor layer (31) as an inspection object is formed so that the substrate is disposed on the semiconductor film layer inspection apparatus (10);
a carrier generation step (S20) of allowing the carrier generator (300) to increase the carrier concentration of the oxide semiconductor layer (31); and
a measurement step (S30) of allowing the detection signal generator (200) to be brought into contact with at least two points on one surface of oxide semiconductor layer (31) to detect the electrical characteristics of the oxide semiconductor layer (31) by applying an electrical signal to the oxide semiconductor layer (31), and
wherein the measurement step (S30) comprises:
a sequential measurement step (S31) of acquiring a detection sensing signal as an independently operable detection sensing signal individually or in preset single or plural units of blocks for a plurability of pin contactor unit blocks which are segmented in a preset manner;
a calibration step (S33) of confirming and calculating a sequential measurement value measured in a target pin contactor unit block using the detection sensing signal acquired individually for the segmented pin contactor unit blocks in the sequential measurement step (S31) as the independently operable detection sensing signal, and determining validity of the calculated sequential measurement value as the independently operable detection sensing signal; and
a measurement confirmation step (S35) of outputting final electrical characteristics of the oxide semiconductor layer as a result of determination in the calibration step (S33).

### Claim 27 (depends on 26)

The method according to claim 26, wherein the semiconductor film layer inspection apparatus (10) further comprises a detecting calibration module (500) disposed between the detection signal generating and sensing probe (202) and the detection probe pin (230), and configured to apply, as an independently operable detection signal, a detection signal from the detection signal generating and sensing probe (202) to the detection probe pin contactor unit (233) that forms one or more independently detectable and operable pin contactor unit blocks and configured to process an independently operable detection sensing signal applied thereto from the detection probe pin contactor unit (233) for application to the detection signal generating and sensing probe (202),
wherein the detecting calibration module (500) comprises:
a detecting calibration data selector (520) configured to select a target pin contactor unit block from among a plurality of pin contactor unit blocks using the detection signal from the detection signal generating and sensing probe (202) as the independently operable detection signal, and configured to output as the independently operable detection sensing signal from the detection probe pin contactor unit (233) of a corresponding pin contactor unit block of the pin contactor unit blocks, the detection sensing signal applied to the detecting calibration module (500) from the detection probe pin contactor unit (233); and
a detecting calibration control unit (510) configured to determine whether to use the independently operable detection sensing signal from the detection probe pin contactor unit (233) of the corresponding pin contactor unit block based on the independently operable detection sensing signals of the plurality of pin contactor unit blocks and information a number of the detection probe pin contactor units (233), and configured to perform a normalization of the electrical characteristics of the semiconductor film layer (30) including the oxide semiconductor layer (31) based on the number of the detection probe pin contactor units (233) depending on whether to use the independently operable detection sensing signal from the detection probe pin contactor unit (233) of the corresponding pin contactor unit block, and
wherein the sequential measurement step (S31) comprises:
a sequential measurement mode confirmation step (S311) of allowing the detecting calibration control unit (510) to confirm a sequential measurement mode which is to be selected and executed by a user; and
a sequential measurement mode execution step (S313) of acquiring the detection sensing signal as the independently operable detection sensing signal individually for the segmented pin contactor unit blocks according to the sequential measurement mode selected through the detecting calibration control unit (510) according to the sequential measurement mode confirmed in the sequential measurement mode confirmation step (S311).

### Claim 28 (depends on 27)

The method according to claim 27, wherein the calibration step (S33) comprises:
a sequential measurement value confirmation and calculation step (S331) of allowing a detecting calibration calculation control unit (511) of the detecting calibration control unit (510) to calculate independently operable detection sensing signals per the number of the detection probe pin contactor units in the case of including the corresponding pin contactor unit block based on the independently operable detection sensing signals of the plurality of pin contactor unit blocks and information on the number of the detection probe pin contactor units (233); and
a calibration validity determination step (S333) of allowing a detecting calibration determination control unit (513) of the detecting calibration control unit (510) to determine whether to use the independently operable detection sensing signals per the number of the detection probe pin contactor units as independently operable detection sensing signals based on the independently operable detection sensing signals per the number of the detection probe pin contactor units, calculated by the detecting calibration calculation control unit (511).