# US 12,000,045 B2 · Method of manufacturing semiconductor device, non-transitory computer-readable recording medium, substrate processing apparatus and substrate processing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,000,045 B2 - Document ID: US12000045B2 - Status: Granted - Kind: B2 - Application number: 17/466,884 - Filed: 2021-09-03 - Published: 2021-12-23 - Granted: 2024-06-04 - Earliest claimed: 2019-03-06 - Assignees: Kokusai Electric Corporation - Applicants: Kokusai Electric Corporation - Inventors: Takuya Joda; Yukinao Kaga; Yoshimasa Nagatomi - Web page: https://patentgrep.com/patent/US12000045B2 ## CPC - C23C 16/34: Nitrides {(C23C16/303 takes precedence)} - C23C 16/45557: {Pulsed pressure or control pressure} - C23C 16/303: {Nitrides} - C23C 16/4401: {Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber} - C23C 16/45523: {Pulsed gas flow or change of composition over time} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H10P 14/412: {Deposition of metallic or metal-silicide materials} - H10P 14/418: {the conductive layers comprising transition metals} - H10P 14/432: {using selective deposition} - H10W 20/032: {of conductive barrier, adhesion or liner layers} - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10B: ELECTRONIC MEMORY DEVICES ## Abstract Described herein is a technique capable of improving characteristics of a film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times. ### Claim 2 (depends on 1) The method of claim 1, further comprising (e) before (a), supplying a gas containing nitrogen and hydrogen to the substrate and thereafter purging the process chamber. ### Claim 3 (depends on 1) The method of claim 1, wherein (a) further comprises (a-3) adjusting an inner pressure of the process chamber before supplying the metal-containing gas to be equal to that of the process chamber when the metal-containing gas is being supplied. ### Claim 4 (depends on 1) The method of claim 1, wherein (a-2) further comprises: (a-4) supplying an inert gas into the process chamber; and (a-5) exhausting the inner atmosphere of the process chamber after supplying the inert gas. ### Claim 5 (depends on 1) The method of claim 1, wherein an inner pressure of the process chamber is maintained during (a). ### Claim 6 (depends on 1) The method of claim 1, wherein the metal-containing gas and the reducing gas are supplied in (a) such that an amount of the metal-containing gas supplied to the substrate is greater than an amount of the reducing gas supplied to the substrate. ### Claim 7 (depends on 1) The method of claim 1, wherein the metal-containing gas is supplied via a flash tank and the reducing gas is supplied without passing through any flash tank in (a). ### Claim 8 (depends on 1) The method of claim 1, wherein the second number is greater than the first number. ### Claim 9 (depends on 1) The method of claim 1, wherein a supply of the metal-containing gas and a supply of the reducing gas are stopped simultaneously in (a). ### Claim 10 (depends on 9) The method of claim 9, further comprising (e) before (a), supplying a gas containing nitrogen and hydrogen to the substrate, and thereafter purging the process chamber. ### Claim 11 (depends on 1) The method of claim 1, wherein a supply of the metal-containing gas is stopped after a supply of the reducing gas is stopped in (a). ### Claim 12 (depends on 11) The method of claim 11, further comprising (e) before (a), supplying a gas containing nitrogen and hydrogen to the substrate, and thereafter purging the process chamber after the gas containing nitrogen and hydrogen is supplied. ### Claim 13 (depends on 11) The method of claim 11, wherein (a) further comprises (a-3) adjusting an inner pressure of the process chamber before supplying the metal-containing gas to be equal to that of the process chamber when the metal-containing gas is being supplied. ### Claim 14 (depends on 1) The method of claim 1, wherein the reducing gas is supplied after a supply of the metal-containing gas is started in (a). ### Claim 15 (depends on 14) The method of claim 14, wherein the supply of the metal-containing gas and a supply of the reducing gas are stopped simultaneously in (a). ### Claim 16 (depends on 14) The method of claim 14, wherein the supply of the metal-containing gas is stopped after a supply of the reducing gas is stopped in (a). ### Claim 17 (depends on 14) The method of claim 14, further comprising (e) before (a), supplying a gas containing nitrogen and hydrogen to the substrate, and thereafter purging the process chamber. ### Claim 18 (depends on 14) The method of claim 14, wherein (a) further comprises (a-3) adjusting an inner pressure of the process chamber before supplying the metal-containing gas to be equal to that of the process chamber when the metal-containing gas is being supplied. ### Claim 19 A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times. ### Claim 20 A substrate processing apparatus comprising: a process chamber in which a substrate is processed; a first gas supplier configured to supply a metal-containing gas to the substrate; a second gas supplier configured to supply a reducing gas containing silicon and hydrogen and free of halogen to the substrate; a third gas supplier configured to supply a nitrogen-containing gas to the substrate; an exhauster configured to exhaust an inner atmosphere of the process chamber; and a controller configured to be capable of controlling the first gas supplier, the second gas supplier, the third gas supplier and the exhauster to perform: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times. ### Claim 21 A substrate processing method comprising: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times.