# US 11,999,889 B2 · Etching solution and application thereof

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- Number: US 11,999,889 B2
- Document ID: US11999889B2
- Status: Granted
- Kind: B2
- Application number: 17/485,546
- Filed: 2021-09-27
- Published: 2022-03-31
- Granted: 2024-06-04
- Earliest claimed: 2020-09-29
- Assignees: Phichem Corporation
- Applicants: Phichem Corporation
- Inventors: Xiaoyi Gao; Hangjian Hu
- Web page: https://patentgrep.com/patent/US11999889B2

## CPC

- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- C09K 13/06: with organic material
- C23F 1/38: for etching refractory metals
- H10P 50/667: {by liquid etching only}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure relates to the technical field of etching. More specifically, the present disclosure relates to an etching solution and an application thereof. A preparation raw material of the etching solution includes at least one oxidant, at least one stabilizer, and deionized water. Through the combined action of hydrogen peroxide and stabilizer, the etching solution of the present disclosure has the good stability, the longer service life, the faster etching rate and the better stability of the etching rate, and the etching solution of the present disclosure has a good etching effect on a titanium-series metal.

## Claims

### Claim 1

An etching solution, wherein a preparation raw material of the etching solution comprises at least one oxidant, deionized water, and the following stabilizer:
stabilizer A: an inorganic phosphate, the phosphate radical in the stabilizer A accounts for 3.5-6.5 wt % of the etching solution;
stabilizer B: an organic phosphonic acid and salts thereof;
stabilizer C: an organic poly-carboxylic acid and salts thereof;
the oxidant is selected from one of hydrogen peroxide, ammonium persulfate, or potassium persulfate;
the weight ratio of the stabilizer C and the stabilizer B in the etching solution is (3-6):1.

### Claim 2 (depends on 1)

The etching solution according to claim 1, wherein the organic phosphonic acid is selected from at least one of Hydroxyethylidene diphosphate, Ethylenebis (nitrilodimethylene) tetraphosphonic acid, Hexamethylenediamine-N,N,N′,N′-tetrakis (methylphosphonic Acid), Diethylene triamine penta (methylene-phosphonic acid), Hydroxyethylidene diphosphate, Amino tris (methylene phosphonic acid), or Ethylenediamine tetramethylene phosphonate.

### Claim 3 (depends on 2)

The etching solution according to claim 2, wherein the organic phosphonic acid is selected from at least one of 1-Hydroxyethylidene-1,1-diphonic acid, Ethylenebis (nitrilodimethylene) tetraphosphonic acid, Hexamethylenediamine-N,N,N′,N′-tetrakis, Diethylene triamine penta (methylene-phosphonic acid), 1-Hydroxyethylidene-1,1-diphonic acid, Amino tris (methylene phosphonic acid), or Ethylenediamine tetramethylene phosphonic acid.

### Claim 4 (depends on 1)

The etching solution according to claim 1, wherein the stabilizer B accounts for 0.05-5 wt % of the etching solution.

### Claim 5 (depends on 4)

The etching solution according to claim 4, wherein the stabilizer B accounts for 0.1-1 wt % of the etching solution.

### Claim 6 (depends on 1)

The etching solution according to claim 1, wherein the organic poly-carboxylic acid is selected from at least one of iminodiacetic acid, nitrilotriacetic acid, ethylenediamine tetraacetic acid, diethylenetriamine pentaacetic acid, 3-hydroxy-1,3,5-glutaric acid, 2-hydroxysuccinic acid, tartaric acid, or succinic acid.

### Claim 7 (depends on 6)

The etching solution according to claim 6, wherein the organic poly-carboxylic acid is selected from at least one of ethylenediamine tetraacetic acid, 3-hydroxy-1,3,5-glutaric acid, 2-hydroxysuccinic acid, or tartaric acid.

### Claim 8 (depends on 1)

The etching solution according to claim 1, wherein the stabilizer C accounts for 0.1-10 wt % of the etching solution.

### Claim 9 (depends on 8)

The etching solution according to claim 8, wherein the stabilizer C accounts for 0.5-5 wt % of the etching solution.

### Claim 10 (depends on 1)

The etching solution according to claim 1, wherein the oxidant accounts for 8-25 wt % of the etching solution.

### Claim 11 (depends on 1)

The etching solution according to claim 1, wherein the oxidant is selected from one of hydrogen peroxide.

### Claim 12 (depends on 1)

An application of the etching solution according to claim 1 in etching of a titanium-series metal.

### Claim 13 (depends on 12)

The application according to claim 12, wherein the titanium-series metal is a metallic titanium or a titanium-tungsten alloy.